Overview
The MJD32CT4G is a PNP power transistor from onsemi, designed for general-purpose amplifier and low-speed switching applications. This device is part of the MJD32 series, which is electrically similar to the popular TIP32 series. The MJD32CT4G is packaged in a DPAK (TO-252) case, making it suitable for surface mount applications. It is lead-formed for tape and reel packaging, enhancing its usability in automated assembly processes. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 Vdc |
| Collector-Base Voltage | VCB | 100 Vdc |
| Emitter-Base Voltage | VEB | 5.0 Vdc |
| Collector Current - Continuous | IC | 3.0 Adc |
| Collector Current - Peak | ICM | 5.0 Adc |
| Base Current | IB | 1.0 Adc |
| Total Power Dissipation @ TC = 25°C | PD | 15 W |
| Total Power Dissipation @ TA = 25°C | PD | 1.56 W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 °C |
| Thermal Resistance, Junction-to-Case | RJC | 8.3 °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 80 °C/W |
| Lead Temperature for Soldering Purposes | TL | 260 °C |
Key Features
- Lead-formed for surface mount applications in plastic sleeves.
- Available in straight lead version in plastic sleeves (“1” suffix) and lead-formed version in 16 mm tape and reel (“T4” suffix).
- Electrically similar to popular TIP31 and TIP32 series.
- Epoxy meets UL 94, V-0 @ 0.125 in.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free and RoHS compliant.
Applications
The MJD32CT4G is suitable for a variety of applications, including:
- General-purpose amplifiers.
- Low-speed switching applications.
- Automotive systems requiring AEC-Q101 qualification.
- Industrial control systems.
- Consumer electronics where reliability and durability are crucial.
Q & A
- What is the maximum collector-emitter voltage for the MJD32CT4G?
The maximum collector-emitter voltage (VCEO) for the MJD32CT4G is 100 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) rating is 3.0 Adc.
- Is the MJD32CT4G Pb-free and RoHS compliant?
- What is the thermal resistance from junction to case for this device?
The thermal resistance from junction to case (RJC) is 8.3 °C/W.
- What are the operating and storage junction temperature ranges for the MJD32CT4G?
The operating and storage junction temperature range is −65 to +150 °C.
- Is the MJD32CT4G suitable for automotive applications?
- What package type is the MJD32CT4G available in?
The MJD32CT4G is packaged in a DPAK (TO-252) case.
- What is the maximum base current rating for this transistor?
The maximum base current (IB) rating is 1.0 Adc.
- What is the total power dissipation at TA = 25°C for the MJD32CT4G?
The total power dissipation at TA = 25°C is 1.56 W.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes (TL) is 260 °C.
