MJD31CG
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onsemi MJD31CG

Manufacturer No:
MJD31CG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD31CG is a complementary power transistor produced by onsemi, designed for general-purpose amplifier and low-speed switching applications. This NPN transistor is part of the MJD31 and MJD32 series, which are electrically similar to the popular TIP31 and TIP32 series. The MJD31CG is packaged in a DPAK (TO-252) case, making it suitable for surface mount applications. It is Pb-free and RoHS compliant, ensuring environmental sustainability. The device is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Max Unit Value
Collector-Emitter Voltage VCEO Vdc 40 / 100 (MJD31C)
Collector-Base Voltage VCB Vdc 40 / 100 (MJD31C)
Emitter-Base Voltage VEB Vdc 5.0
Collector Current - Continuous IC Adc 3.0
Collector Current - Peak ICM Adc 5.0
Base Current IB Adc 1.0
Total Power Dissipation @ TC = 25°C PD W 15 (Derate above 25°C: 0.12 W/°C)
Total Power Dissipation @ TA = 25°C PD W 1.56 (Derate above 25°C: 0.012 W/°C)
Operating and Storage Junction Temperature Range TJ, Tstg °C -65 to +150
Thermal Resistance, Junction-to-Case RJC °C/W 8.3
Thermal Resistance, Junction-to-Ambient RJA °C/W 80
Lead Temperature for Soldering Purposes TL °C 260

Key Features

  • Lead formed for surface mount applications in plastic sleeves.
  • Straight lead version in plastic sleeves (“1” suffix) and lead formed version in 16 mm tape and reel (“T4” suffix).
  • Electrically similar to popular TIP31 and TIP32 series.
  • Epoxy meets UL 94, V-0 @ 0.125 in.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant.

Applications

The MJD31CG is suitable for a variety of applications, including:

  • General-purpose amplifier circuits.
  • Low-speed switching applications.
  • Automotive systems due to its AEC-Q101 qualification.
  • Other applications requiring high reliability and specific control change requirements.

Q & A

  1. What is the maximum collector-emitter voltage for the MJD31CG?

    The maximum collector-emitter voltage (VCEO) for the MJD31CG is 40 Vdc, and for the MJD31C, it is 100 Vdc.

  2. What is the continuous collector current rating for this transistor?

    The continuous collector current (IC) rating is 3.0 Adc.

  3. Is the MJD31CG Pb-free and RoHS compliant?

    Yes, the MJD31CG is Pb-free and RoHS compliant.

  4. What is the thermal resistance from junction to case for the MJD31CG?

    The thermal resistance from junction to case (RJC) is 8.3 °C/W.

  5. What are the operating and storage junction temperature ranges for this transistor?

    The operating and storage junction temperature range is -65 to +150 °C.

  6. Is the MJD31CG suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

  7. What is the maximum base current rating for the MJD31CG?

    The maximum base current (IB) rating is 1.0 Adc.

  8. What is the total power dissipation at TC = 25°C for this transistor?

    The total power dissipation at TC = 25°C is 15 W, with a derate of 0.12 W/°C above 25°C.

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260 °C.

  10. What package types are available for the MJD31CG?

    The MJD31CG is available in DPAK (TO-252) packages, including straight lead and lead formed versions, as well as tape and reel options.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD31CG MJD31CJ MJD32CG MJD31C MJD31C1 MJD31C1G
Manufacturer onsemi Nexperia USA Inc. onsemi STMicroelectronics onsemi onsemi
Product Status Active Active Active Obsolete Obsolete Active
Transistor Type NPN NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 1µA 50µA 50µA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 25 @ 1A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V
Power - Max 1.56 W 1.6 W 1.56 W 15 W 1.56 W 1.56 W
Frequency - Transition 3MHz 3MHz 3MHz - 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package DPAK DPAK DPAK DPAK I-PAK I-PAK

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