MJD31CG
  • Share:

onsemi MJD31CG

Manufacturer No:
MJD31CG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD31CG is a complementary power transistor produced by onsemi, designed for general-purpose amplifier and low-speed switching applications. This NPN transistor is part of the MJD31 and MJD32 series, which are electrically similar to the popular TIP31 and TIP32 series. The MJD31CG is packaged in a DPAK (TO-252) case, making it suitable for surface mount applications. It is Pb-free and RoHS compliant, ensuring environmental sustainability. The device is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Max Unit Value
Collector-Emitter Voltage VCEO Vdc 40 / 100 (MJD31C)
Collector-Base Voltage VCB Vdc 40 / 100 (MJD31C)
Emitter-Base Voltage VEB Vdc 5.0
Collector Current - Continuous IC Adc 3.0
Collector Current - Peak ICM Adc 5.0
Base Current IB Adc 1.0
Total Power Dissipation @ TC = 25°C PD W 15 (Derate above 25°C: 0.12 W/°C)
Total Power Dissipation @ TA = 25°C PD W 1.56 (Derate above 25°C: 0.012 W/°C)
Operating and Storage Junction Temperature Range TJ, Tstg °C -65 to +150
Thermal Resistance, Junction-to-Case RJC °C/W 8.3
Thermal Resistance, Junction-to-Ambient RJA °C/W 80
Lead Temperature for Soldering Purposes TL °C 260

Key Features

  • Lead formed for surface mount applications in plastic sleeves.
  • Straight lead version in plastic sleeves (“1” suffix) and lead formed version in 16 mm tape and reel (“T4” suffix).
  • Electrically similar to popular TIP31 and TIP32 series.
  • Epoxy meets UL 94, V-0 @ 0.125 in.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant.

Applications

The MJD31CG is suitable for a variety of applications, including:

  • General-purpose amplifier circuits.
  • Low-speed switching applications.
  • Automotive systems due to its AEC-Q101 qualification.
  • Other applications requiring high reliability and specific control change requirements.

Q & A

  1. What is the maximum collector-emitter voltage for the MJD31CG?

    The maximum collector-emitter voltage (VCEO) for the MJD31CG is 40 Vdc, and for the MJD31C, it is 100 Vdc.

  2. What is the continuous collector current rating for this transistor?

    The continuous collector current (IC) rating is 3.0 Adc.

  3. Is the MJD31CG Pb-free and RoHS compliant?

    Yes, the MJD31CG is Pb-free and RoHS compliant.

  4. What is the thermal resistance from junction to case for the MJD31CG?

    The thermal resistance from junction to case (RJC) is 8.3 °C/W.

  5. What are the operating and storage junction temperature ranges for this transistor?

    The operating and storage junction temperature range is -65 to +150 °C.

  6. Is the MJD31CG suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

  7. What is the maximum base current rating for the MJD31CG?

    The maximum base current (IB) rating is 1.0 Adc.

  8. What is the total power dissipation at TC = 25°C for this transistor?

    The total power dissipation at TC = 25°C is 15 W, with a derate of 0.12 W/°C above 25°C.

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260 °C.

  10. What package types are available for the MJD31CG?

    The MJD31CG is available in DPAK (TO-252) packages, including straight lead and lead formed versions, as well as tape and reel options.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$0.70
1,172

Please send RFQ , we will respond immediately.

Same Series
MJD31CRLG
MJD31CRLG
TRANS NPN 100V 3A DPAK
MJD32T4G
MJD32T4G
TRANS PNP 40V 3A DPAK
MJD31CT4G
MJD31CT4G
TRANS NPN 100V 3A DPAK
MJD32CT4G
MJD32CT4G
TRANS PNP 100V 3A DPAK
MJD31T4G
MJD31T4G
TRANS NPN 40V 3A DPAK
NJVMJD32CG
NJVMJD32CG
TRANS PNP 100V 3A DPAK
MJD31C1G
MJD31C1G
TRANS NPN 100V 3A IPAK
MJD32CRLG
MJD32CRLG
TRANS PNP 100V 3A DPAK
NJVMJD32T4G
NJVMJD32T4G
TRANS PNP 40V 3A DPAK
MJD31CRL
MJD31CRL
TRANS NPN 100V 3A DPAK
MJD32CRL
MJD32CRL
TRANS PNP 100V 3A DPAK
NJVMJD32CT4G-VF01
NJVMJD32CT4G-VF01
TRANS PNP 100V 3A DPAK

Similar Products

Part Number MJD31CG MJD31CJ MJD32CG MJD31C MJD31C1 MJD31C1G
Manufacturer onsemi Nexperia USA Inc. onsemi STMicroelectronics onsemi onsemi
Product Status Active Active Active Obsolete Obsolete Active
Transistor Type NPN NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 1µA 50µA 50µA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 25 @ 1A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V
Power - Max 1.56 W 1.6 W 1.56 W 15 W 1.56 W 1.56 W
Frequency - Transition 3MHz 3MHz 3MHz - 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package DPAK DPAK DPAK DPAK I-PAK I-PAK

Related Product By Categories

BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
MJE340STU
MJE340STU
onsemi
TRANS NPN 300V 0.5A TO126-3
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5