MJD31CG
  • Share:

onsemi MJD31CG

Manufacturer No:
MJD31CG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD31CG is a complementary power transistor produced by onsemi, designed for general-purpose amplifier and low-speed switching applications. This NPN transistor is part of the MJD31 and MJD32 series, which are electrically similar to the popular TIP31 and TIP32 series. The MJD31CG is packaged in a DPAK (TO-252) case, making it suitable for surface mount applications. It is Pb-free and RoHS compliant, ensuring environmental sustainability. The device is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Max Unit Value
Collector-Emitter Voltage VCEO Vdc 40 / 100 (MJD31C)
Collector-Base Voltage VCB Vdc 40 / 100 (MJD31C)
Emitter-Base Voltage VEB Vdc 5.0
Collector Current - Continuous IC Adc 3.0
Collector Current - Peak ICM Adc 5.0
Base Current IB Adc 1.0
Total Power Dissipation @ TC = 25°C PD W 15 (Derate above 25°C: 0.12 W/°C)
Total Power Dissipation @ TA = 25°C PD W 1.56 (Derate above 25°C: 0.012 W/°C)
Operating and Storage Junction Temperature Range TJ, Tstg °C -65 to +150
Thermal Resistance, Junction-to-Case RJC °C/W 8.3
Thermal Resistance, Junction-to-Ambient RJA °C/W 80
Lead Temperature for Soldering Purposes TL °C 260

Key Features

  • Lead formed for surface mount applications in plastic sleeves.
  • Straight lead version in plastic sleeves (“1” suffix) and lead formed version in 16 mm tape and reel (“T4” suffix).
  • Electrically similar to popular TIP31 and TIP32 series.
  • Epoxy meets UL 94, V-0 @ 0.125 in.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant.

Applications

The MJD31CG is suitable for a variety of applications, including:

  • General-purpose amplifier circuits.
  • Low-speed switching applications.
  • Automotive systems due to its AEC-Q101 qualification.
  • Other applications requiring high reliability and specific control change requirements.

Q & A

  1. What is the maximum collector-emitter voltage for the MJD31CG?

    The maximum collector-emitter voltage (VCEO) for the MJD31CG is 40 Vdc, and for the MJD31C, it is 100 Vdc.

  2. What is the continuous collector current rating for this transistor?

    The continuous collector current (IC) rating is 3.0 Adc.

  3. Is the MJD31CG Pb-free and RoHS compliant?

    Yes, the MJD31CG is Pb-free and RoHS compliant.

  4. What is the thermal resistance from junction to case for the MJD31CG?

    The thermal resistance from junction to case (RJC) is 8.3 °C/W.

  5. What are the operating and storage junction temperature ranges for this transistor?

    The operating and storage junction temperature range is -65 to +150 °C.

  6. Is the MJD31CG suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

  7. What is the maximum base current rating for the MJD31CG?

    The maximum base current (IB) rating is 1.0 Adc.

  8. What is the total power dissipation at TC = 25°C for this transistor?

    The total power dissipation at TC = 25°C is 15 W, with a derate of 0.12 W/°C above 25°C.

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260 °C.

  10. What package types are available for the MJD31CG?

    The MJD31CG is available in DPAK (TO-252) packages, including straight lead and lead formed versions, as well as tape and reel options.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$0.70
1,172

Please send RFQ , we will respond immediately.

Same Series
MJD32T4G
MJD32T4G
TRANS PNP 40V 3A DPAK
MJD32CT4G
MJD32CT4G
TRANS PNP 100V 3A DPAK
MJD32CG
MJD32CG
TRANS PNP 100V 3A DPAK
NJVMJD32CG
NJVMJD32CG
TRANS PNP 100V 3A DPAK
NJVMJD31CG
NJVMJD31CG
TRANS NPN 100V 3A DPAK
MJD31CG
MJD31CG
TRANS NPN 100V 3A DPAK
MJD32CRLG
MJD32CRLG
TRANS PNP 100V 3A DPAK
MJD32RLG
MJD32RLG
TRANS PNP 40V 3A DPAK
NJVMJD31CRLG
NJVMJD31CRLG
TRANS NPN 100V 3A DPAK
MJD31C1
MJD31C1
TRANS NPN 100V 3A IPAK
NJVMJD31CT4G-VF01
NJVMJD31CT4G-VF01
TRANS NPN 100V 3A DPAK
NJVMJD32CT4G-VF01
NJVMJD32CT4G-VF01
TRANS PNP 100V 3A DPAK

Similar Products

Part Number MJD31CG MJD31CJ MJD32CG MJD31C MJD31C1 MJD31C1G
Manufacturer onsemi Nexperia USA Inc. onsemi STMicroelectronics onsemi onsemi
Product Status Active Active Active Obsolete Obsolete Active
Transistor Type NPN NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 1µA 50µA 50µA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 25 @ 1A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V
Power - Max 1.56 W 1.6 W 1.56 W 15 W 1.56 W 1.56 W
Frequency - Transition 3MHz 3MHz 3MHz - 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package DPAK DPAK DPAK DPAK I-PAK I-PAK

Related Product By Categories

BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BC856BW_R1_00001
BC856BW_R1_00001
Panjit International Inc.
TRANS PNP 65V 0.1A SOT323
BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC