MJD32CG
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onsemi MJD32CG

Manufacturer No:
MJD32CG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD32CG is a PNP power transistor produced by onsemi, designed for general-purpose amplifier and low-speed switching applications. This transistor is part of the MJD32 series, which is electrically similar to the popular TIP32 series. The MJD32CG is available in a DPAK package, making it suitable for surface mount applications. It is Pb-free and RoHS compliant, ensuring environmental sustainability. The device is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Max Unit
Collector-Emitter Voltage VCEO 40 Vdc (MJD32), 100 Vdc (MJD32C)
Collector-Base Voltage VCB 40 Vdc (MJD32), 100 Vdc (MJD32C)
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current - Continuous IC 3.0 Adc
Collector Current - Peak ICM 5.0 Adc
Base Current IB 1.0 Adc
Total Power Dissipation @ TC = 25°C PD 15 W (Derate above 25°C: 0.12 W/°C)
Total Power Dissipation @ TA = 25°C PD 1.56 W (Derate above 25°C: 0.012 W/°C)
Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C
Thermal Resistance, Junction-to-Case RJC 8.3 °C/W
Thermal Resistance, Junction-to-Ambient RJA 80 °C/W
Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Lead Formed for Surface Mount Applications in Plastic Sleeves
  • Straight Lead Version in Plastic Sleeves (“1” Suffix)
  • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
  • Electrically Similar to Popular TIP31 and TIP32 Series
  • Epoxy Meets UL 94, V−0 @ 0.125 in
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • Pb−Free and RoHS Compliant

Applications

The MJD32CG transistor is suitable for a variety of applications, including:

  • General-purpose amplifiers
  • Low-speed switching applications
  • Automotive systems requiring AEC-Q101 qualification
  • Other applications needing unique site and control change requirements

Q & A

  1. What is the collector-emitter voltage rating for the MJD32CG transistor?

    The collector-emitter voltage rating for the MJD32CG transistor is 40 Vdc for the MJD32 and 100 Vdc for the MJD32C.

  2. What is the maximum continuous collector current for the MJD32CG?

    The maximum continuous collector current for the MJD32CG is 3.0 Adc.

  3. Is the MJD32CG Pb-free and RoHS compliant?
  4. What is the thermal resistance from junction to case for the MJD32CG?

    The thermal resistance from junction to case for the MJD32CG is 8.3 °C/W.

  5. What are the operating and storage junction temperature ranges for the MJD32CG?

    The operating and storage junction temperature ranges for the MJD32CG are −65 to +150 °C.

  6. Is the MJD32CG suitable for automotive applications?
  7. What package types are available for the MJD32CG?

    The MJD32CG is available in DPAK packages, including lead formed and straight lead versions, and in tape and reel configurations.

  8. What is the maximum base current for the MJD32CG?

    The maximum base current for the MJD32CG is 1.0 Adc.

  9. What is the total power dissipation at TC = 25°C for the MJD32CG?

    The total power dissipation at TC = 25°C for the MJD32CG is 15 W, with a derate of 0.12 W/°C above 25°C.

  10. What is the lead temperature for soldering purposes for the MJD32CG?

    The lead temperature for soldering purposes for the MJD32CG is 260 °C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD32CG MJD32CJ MJD42CG MJD31CG MJD32C MJD32C1
Manufacturer onsemi Nexperia USA Inc. onsemi onsemi STMicroelectronics onsemi
Product Status Active Active Active Active Obsolete Active
Transistor Type PNP PNP PNP NPN PNP -
Current - Collector (Ic) (Max) 3 A 3 A 6 A 3 A 3 A -
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V -
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.5V @ 600mA, 6A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A -
Current - Collector Cutoff (Max) 50µA 1µA 50µA 50µA 50µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 25 @ 1A, 4V 15 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V -
Power - Max 1.56 W 1.6 W 1.75 W 1.56 W 15 W -
Frequency - Transition 3MHz 3MHz 3MHz 3MHz - -
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 -
Supplier Device Package DPAK DPAK DPAK DPAK DPAK -

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