MJD31CT4G
  • Share:

onsemi MJD31CT4G

Manufacturer No:
MJD31CT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi MJD31CT4G is a high-performance NPN power transistor designed for various power amplification and switching applications. This transistor is part of the MJD31 series and is known for its robust specifications and reliability. It is packaged in a 3-pin DPAK (TO-252) surface mount configuration, making it suitable for a wide range of electronic systems.

Key Specifications

ParameterValue
Transistor TypeNPN
Maximum Collector Emitter Voltage100 V
Maximum Emitter Base Voltage5 V
Maximum Collector Base Voltage100 V
Maximum Collector Current3 A
Maximum Power Dissipation1.56 W
Cutoff Frequency3 MHz
Current Gain Factor (h_FE)50 (min: 25)
Package TypeDPAK (TO-252)
Mounting TypeSurface Mount
Pin Count3
Dimensions2.38 x 6.73 x 6.22 mm
Maximum Operating Temperature+150 °C

Key Features

  • Lead formed for surface mount applications in plastic sleeves.
  • Straight lead version in plastic sleeves (“1” suffix) and lead formed version in 16 mm tape and reel (“T4” suffix).
  • Electrically similar to popular TIP31 and TIP32 series.
  • Epoxy meets UL 94, V−0 @ 0.125 in.
  • ESD ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable.
  • Pb-free packages.

Applications

  • General purpose amplifier.
  • Low speed switching applications.

Q & A

  1. What is the maximum collector emitter voltage of the MJD31CT4G transistor?
    The maximum collector emitter voltage is 100 V.
  2. What is the package type of the MJD31CT4G transistor?
    The package type is DPAK (TO-252).
  3. What is the maximum collector current of the MJD31CT4G transistor?
    The maximum collector current is 3 A.
  4. What is the maximum power dissipation of the MJD31CT4G transistor?
    The maximum power dissipation is 1.56 W.
  5. What is the cutoff frequency of the MJD31CT4G transistor?
    The cutoff frequency is 3 MHz.
  6. Is the MJD31CT4G transistor AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements.
  7. What are the typical applications of the MJD31CT4G transistor?
    Typical applications include general purpose amplification and low speed switching.
  8. What is the maximum operating temperature of the MJD31CT4G transistor?
    The maximum operating temperature is +150 °C.
  9. Is the MJD31CT4G transistor Pb-free?
    Yes, the MJD31CT4G transistor is Pb-free.
  10. What is the current gain factor (h_FE) of the MJD31CT4G transistor?
    The current gain factor (h_FE) is 50, with a minimum of 25.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$0.67
550

Please send RFQ , we will respond immediately.

Same Series
MJD31CRLG
MJD31CRLG
TRANS NPN 100V 3A DPAK
MJD32T4G
MJD32T4G
TRANS PNP 40V 3A DPAK
MJD31CT4G
MJD31CT4G
TRANS NPN 100V 3A DPAK
MJD32CT4G
MJD32CT4G
TRANS PNP 100V 3A DPAK
MJD31T4G
MJD31T4G
TRANS NPN 40V 3A DPAK
MJD32CG
MJD32CG
TRANS PNP 100V 3A DPAK
MJD31C1G
MJD31C1G
TRANS NPN 100V 3A IPAK
MJD32CRLG
MJD32CRLG
TRANS PNP 100V 3A DPAK
NJVMJD32T4G
NJVMJD32T4G
TRANS PNP 40V 3A DPAK
MJD32RLG
MJD32RLG
TRANS PNP 40V 3A DPAK
NJVMJD31CRLG
NJVMJD31CRLG
TRANS NPN 100V 3A DPAK
NJVMJD31CT4G-VF01
NJVMJD31CT4G-VF01
TRANS NPN 100V 3A DPAK

Similar Products

Part Number MJD31CT4G MJD32CT4G MJD31T4G MJD41CT4G MJD31CT4
Manufacturer onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Active Active
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 6 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 40 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.5V @ 600mA, 6A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 50µA 50µA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 15 @ 3A, 4V 10 @ 3A, 4V
Power - Max 1.56 W 1.56 W 1.56 W 1.75 W 15 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK DPAK

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BF820,215
BF820,215
Nexperia USA Inc.
TRANS NPN 300V 0.05A TO236AB
BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
BC860CWH6327XTSA1
BC860CWH6327XTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN