MJD31CT4G
  • Share:

onsemi MJD31CT4G

Manufacturer No:
MJD31CT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi MJD31CT4G is a high-performance NPN power transistor designed for various power amplification and switching applications. This transistor is part of the MJD31 series and is known for its robust specifications and reliability. It is packaged in a 3-pin DPAK (TO-252) surface mount configuration, making it suitable for a wide range of electronic systems.

Key Specifications

ParameterValue
Transistor TypeNPN
Maximum Collector Emitter Voltage100 V
Maximum Emitter Base Voltage5 V
Maximum Collector Base Voltage100 V
Maximum Collector Current3 A
Maximum Power Dissipation1.56 W
Cutoff Frequency3 MHz
Current Gain Factor (h_FE)50 (min: 25)
Package TypeDPAK (TO-252)
Mounting TypeSurface Mount
Pin Count3
Dimensions2.38 x 6.73 x 6.22 mm
Maximum Operating Temperature+150 °C

Key Features

  • Lead formed for surface mount applications in plastic sleeves.
  • Straight lead version in plastic sleeves (“1” suffix) and lead formed version in 16 mm tape and reel (“T4” suffix).
  • Electrically similar to popular TIP31 and TIP32 series.
  • Epoxy meets UL 94, V−0 @ 0.125 in.
  • ESD ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable.
  • Pb-free packages.

Applications

  • General purpose amplifier.
  • Low speed switching applications.

Q & A

  1. What is the maximum collector emitter voltage of the MJD31CT4G transistor?
    The maximum collector emitter voltage is 100 V.
  2. What is the package type of the MJD31CT4G transistor?
    The package type is DPAK (TO-252).
  3. What is the maximum collector current of the MJD31CT4G transistor?
    The maximum collector current is 3 A.
  4. What is the maximum power dissipation of the MJD31CT4G transistor?
    The maximum power dissipation is 1.56 W.
  5. What is the cutoff frequency of the MJD31CT4G transistor?
    The cutoff frequency is 3 MHz.
  6. Is the MJD31CT4G transistor AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements.
  7. What are the typical applications of the MJD31CT4G transistor?
    Typical applications include general purpose amplification and low speed switching.
  8. What is the maximum operating temperature of the MJD31CT4G transistor?
    The maximum operating temperature is +150 °C.
  9. Is the MJD31CT4G transistor Pb-free?
    Yes, the MJD31CT4G transistor is Pb-free.
  10. What is the current gain factor (h_FE) of the MJD31CT4G transistor?
    The current gain factor (h_FE) is 50, with a minimum of 25.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$0.67
550

Please send RFQ , we will respond immediately.

Same Series
MJD31CT4G
MJD31CT4G
TRANS NPN 100V 3A DPAK
MJD32CT4G
MJD32CT4G
TRANS PNP 100V 3A DPAK
MJD31T4G
MJD31T4G
TRANS NPN 40V 3A DPAK
MJD32CG
MJD32CG
TRANS PNP 100V 3A DPAK
NJVMJD32CG
NJVMJD32CG
TRANS PNP 100V 3A DPAK
NJVMJD31CG
NJVMJD31CG
TRANS NPN 100V 3A DPAK
MJD31C1G
MJD31C1G
TRANS NPN 100V 3A IPAK
MJD31CG
MJD31CG
TRANS NPN 100V 3A DPAK
MJD32RLG
MJD32RLG
TRANS PNP 40V 3A DPAK
MJD31C1
MJD31C1
TRANS NPN 100V 3A IPAK
MJD31CRL
MJD31CRL
TRANS NPN 100V 3A DPAK
MJD32CRL
MJD32CRL
TRANS PNP 100V 3A DPAK

Similar Products

Part Number MJD31CT4G MJD32CT4G MJD31T4G MJD41CT4G MJD31CT4
Manufacturer onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Active Active
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 6 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 40 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.5V @ 600mA, 6A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 50µA 50µA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 15 @ 3A, 4V 10 @ 3A, 4V
Power - Max 1.56 W 1.56 W 1.56 W 1.75 W 15 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK DPAK

Related Product By Categories

PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC860CWH6327XTSA1
BC860CWH6327XTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC857C TR PBFREE
BC857C TR PBFREE
Central Semiconductor Corp
TRANS PNP 45V 0.1A SOT23
BCX53-TP
BCX53-TP
Micro Commercial Co
TRANS PNP 80V 1A SOT89
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5