BUK9Y41-80E/GFX
  • Share:

NXP USA Inc. BUK9Y41-80E/GFX

Manufacturer No:
BUK9Y41-80E/GFX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y41-80E is a logic level N-channel MOSFET designed and manufactured by Nexperia. This component is housed in an LFPAK56 (Power SO8) package and utilizes TrenchMOS technology. It is specifically qualified to the AEC Q101 standard, making it suitable for high-performance automotive applications. The MOSFET is known for its low on-state resistance and high thermal rating, making it ideal for thermally demanding environments.

Key Specifications

ParameterValue
Type numberBUK9Y41-80E
PackageLFPAK56; Power-SO8 (SOT669)
Channel typeN-channel
VDS [max] (V)80
RDSon [max] @ VGS = 10 V (mΩ)41
RDSon [max] @ VGS = 5 V (mΩ)45
Tj [max] (°C)175
ID [max] (A)24
QGD [typ] (nC)4.3
Ptot [max] (W)64
Qr [typ] (nC)22
VGSth [typ] (V)1.7
Automotive qualifiedYes
Ciss [typ] (pF)1180
Coss [typ] (pF)99

Key Features

  • Logic level gate with VGS threshold of 1.7 V, ensuring compatibility with standard logic levels.
  • Low on-state resistance (RDSon) of 41 mΩ at VGS = 10 V and 45 mΩ at VGS = 5 V.
  • High maximum junction temperature (Tj) of 175 °C, suitable for thermally demanding environments.
  • Repetitive avalanche rated, enhancing reliability in harsh conditions.
  • AEC Q101 compliant, ensuring high reliability and performance in automotive applications.

Applications

The BUK9Y41-80E is designed for use in high-performance automotive applications, including but not limited to:

  • Power management systems.
  • Motor control systems.
  • High-power switching applications.
  • Thermally demanding environments.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK9Y41-80E?
    The maximum drain-source voltage (VDS) is 80 V.
  2. What is the typical on-state resistance (RDSon) at VGS = 10 V?
    The typical on-state resistance (RDSon) at VGS = 10 V is 41 mΩ.
  3. What is the maximum junction temperature (Tj) of the BUK9Y41-80E?
    The maximum junction temperature (Tj) is 175 °C.
  4. Is the BUK9Y41-80E automotive qualified?
    Yes, the BUK9Y41-80E is AEC Q101 compliant and qualified for automotive applications.
  5. What package type is the BUK9Y41-80E available in?
    The BUK9Y41-80E is available in an LFPAK56 (Power SO8) package.
  6. What is the typical gate-source threshold voltage (VGSth)?
    The typical gate-source threshold voltage (VGSth) is 1.7 V.
  7. What is the maximum continuous drain current (ID)?
    The maximum continuous drain current (ID) is 24 A.
  8. Is the BUK9Y41-80E repetitive avalanche rated?
    Yes, the BUK9Y41-80E is repetitive avalanche rated.
  9. What are some common applications of the BUK9Y41-80E?
    The BUK9Y41-80E is commonly used in power management systems, motor control systems, high-power switching applications, and thermally demanding environments.
  10. Where can I find detailed technical information and datasheets for the BUK9Y41-80E?
    Detailed technical information and datasheets can be found on the Nexperia website or through authorized distributors like Mouser and Digi-Key.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
54

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
MMBT2222ALT3G
MMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
MMBT2484
MMBT2484
Fairchild Semiconductor
TRANS NPN 60V 0.1A SOT23-3
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
SPC5604BF2VLL4
SPC5604BF2VLL4
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 100LQFP
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
HEF4053BT/AUJ
HEF4053BT/AUJ
NXP USA Inc.
IC ANLG SWITCH TRPL SPDT 16SOIC
SC18IS600IPW/S8HP
SC18IS600IPW/S8HP
NXP USA Inc.
IC I2C CONTROLLER SPI 16TSSOP
74LVC2G32DC-Q100125
74LVC2G32DC-Q100125
NXP USA Inc.
OR GATE, LVC/LCX/Z SERIES
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX