BUK9Y41-80E/GFX
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NXP USA Inc. BUK9Y41-80E/GFX

Manufacturer No:
BUK9Y41-80E/GFX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y41-80E is a logic level N-channel MOSFET designed and manufactured by Nexperia. This component is housed in an LFPAK56 (Power SO8) package and utilizes TrenchMOS technology. It is specifically qualified to the AEC Q101 standard, making it suitable for high-performance automotive applications. The MOSFET is known for its low on-state resistance and high thermal rating, making it ideal for thermally demanding environments.

Key Specifications

ParameterValue
Type numberBUK9Y41-80E
PackageLFPAK56; Power-SO8 (SOT669)
Channel typeN-channel
VDS [max] (V)80
RDSon [max] @ VGS = 10 V (mΩ)41
RDSon [max] @ VGS = 5 V (mΩ)45
Tj [max] (°C)175
ID [max] (A)24
QGD [typ] (nC)4.3
Ptot [max] (W)64
Qr [typ] (nC)22
VGSth [typ] (V)1.7
Automotive qualifiedYes
Ciss [typ] (pF)1180
Coss [typ] (pF)99

Key Features

  • Logic level gate with VGS threshold of 1.7 V, ensuring compatibility with standard logic levels.
  • Low on-state resistance (RDSon) of 41 mΩ at VGS = 10 V and 45 mΩ at VGS = 5 V.
  • High maximum junction temperature (Tj) of 175 °C, suitable for thermally demanding environments.
  • Repetitive avalanche rated, enhancing reliability in harsh conditions.
  • AEC Q101 compliant, ensuring high reliability and performance in automotive applications.

Applications

The BUK9Y41-80E is designed for use in high-performance automotive applications, including but not limited to:

  • Power management systems.
  • Motor control systems.
  • High-power switching applications.
  • Thermally demanding environments.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK9Y41-80E?
    The maximum drain-source voltage (VDS) is 80 V.
  2. What is the typical on-state resistance (RDSon) at VGS = 10 V?
    The typical on-state resistance (RDSon) at VGS = 10 V is 41 mΩ.
  3. What is the maximum junction temperature (Tj) of the BUK9Y41-80E?
    The maximum junction temperature (Tj) is 175 °C.
  4. Is the BUK9Y41-80E automotive qualified?
    Yes, the BUK9Y41-80E is AEC Q101 compliant and qualified for automotive applications.
  5. What package type is the BUK9Y41-80E available in?
    The BUK9Y41-80E is available in an LFPAK56 (Power SO8) package.
  6. What is the typical gate-source threshold voltage (VGSth)?
    The typical gate-source threshold voltage (VGSth) is 1.7 V.
  7. What is the maximum continuous drain current (ID)?
    The maximum continuous drain current (ID) is 24 A.
  8. Is the BUK9Y41-80E repetitive avalanche rated?
    Yes, the BUK9Y41-80E is repetitive avalanche rated.
  9. What are some common applications of the BUK9Y41-80E?
    The BUK9Y41-80E is commonly used in power management systems, motor control systems, high-power switching applications, and thermally demanding environments.
  10. Where can I find detailed technical information and datasheets for the BUK9Y41-80E?
    Detailed technical information and datasheets can be found on the Nexperia website or through authorized distributors like Mouser and Digi-Key.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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