BGU7258X
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NXP USA Inc. BGU7258X

Manufacturer No:
BGU7258X
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
IC RF AMP ISM 5GHZ-6GHZ 6HXSON
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BGU7258X, produced by NXP USA Inc., is a fully integrated Monolithic Microwave Integrated Circuit (MMIC) Low Noise Amplifier (LNA) designed for wireless receiver applications in the 5 GHz to 6 GHz Industrial, Scientific, and Medical (ISM) band. Manufactured using NXP's high-performance Silicon Germanium (SiGe:C) technology, this LNA offers best-in-class gain, noise figure, linearity, and efficiency. It features a robust temperature-compensated internal bias network and an integral bypass/shutdown feature, which stabilizes the DC operating point over temperature and minimizes current consumption in bypass mode.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCC supply voltage RF input, AC coupled 3.0 3.3 3.6 V
ICC supply current Gain mode - 13 - mA
ICC supply current Bypass mode - 1 - µA
Tamb ambient temperature - -40 +25 +85 °C
f frequency Gain mode 4900 - 5925 MHz
Gain f = 5.1 GHz, gain mode 12 14 16 dB
Gain f = 5.9 GHz, gain mode 11 13 15 dB
NF noise figure Gain mode - 1.6 - dB
Package - - - HXSON-6 (1.6x1.6 mm) -

Key Features

  • Fully integrated, high-performance LNA with built-in bypass/shutdown feature.
  • Integrated DC blocking at RF input and RF output, requiring only two external components.
  • Low noise figure of 1.6 dB and low current consumption of 13 mA in gain mode.
  • Low bypass current of 1 µA (typical).
  • Single supply operation from 3.0 V to 3.6 V.
  • Integrated concurrent 2.4 GHz notch filter and temperature-stabilized bias network.
  • High IP3i and low EVM (Error Vector Magnitude).
  • High ESD protection of 2 kV (HBM) on all pins.
  • Small, 0.5 mm pitch, 1.6 x 1.6 x 0.5 mm QFN-style package.
  • Compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).

Applications

  • IEEE 802.11a/n/ac WiFi, WLAN.
  • Smartphones, tablets, net-books, and other portable computing devices.
  • Access points, routers, gateways.
  • Wireless video applications.
  • LTE advanced in unlicensed spectrum (LTE-U).
  • General-purpose ISM applications.

Q & A

  1. What is the frequency range of the BGU7258X LNA?

    The BGU7258X operates in the 5 GHz to 6 GHz ISM band.

  2. What is the typical noise figure of the BGU7258X?

    The typical noise figure is 1.6 dB.

  3. What is the supply voltage range for the BGU7258X?

    The supply voltage range is from 3.0 V to 3.6 V.

  4. How much current does the BGU7258X consume in gain mode?

    The typical current consumption in gain mode is 13 mA.

  5. What is the bypass current consumption of the BGU7258X?

    The typical bypass current consumption is 1 µA.

  6. Does the BGU7258X have integrated DC blocking?

    Yes, it has integrated DC blocking at both RF input and RF output.

  7. What is the package type and size of the BGU7258X?

    The package type is HXSON-6, with dimensions of 1.6 x 1.6 x 0.5 mm.

  8. Is the BGU7258X compliant with RoHS regulations?

    Yes, it is compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).

  9. What are some common applications of the BGU7258X?

    Common applications include IEEE 802.11a/n/ac WiFi, WLAN, smartphones, tablets, access points, routers, and general-purpose ISM applications.

  10. Does the BGU7258X have ESD protection?

    Yes, it has high ESD protection of 2 kV (HBM) on all pins.

Product Attributes

Frequency:5GHz ~ 6GHz
P1dB:- 
Gain:14dB
Noise Figure:1.6dB
RF Type:ISM
Voltage - Supply:3V ~ 3.6V
Current - Supply:13mA
Test Frequency:6GHz
Mounting Type:Surface Mount
Package / Case:6-XFDFN Exposed Pad
Supplier Device Package:6-HXSON (1.6x1.6)
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