MMZ38333BT1
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NXP USA Inc. MMZ38333BT1

Manufacturer No:
MMZ38333BT1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
IC RF AMP 3.4GHZ-3.8GHZ 24HVQFN
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The MMZ38333BT1 is a high-efficiency and high-linearity amplifier designed by NXP USA Inc. This 3-stage InGaP HBT (Indium Gallium Phosphide Heterojunction Bipolar Transistor) broadband amplifier is specifically tailored for applications in small cells and LTE base stations. It offers exceptional linearity and performance, making it a reliable choice for wireless communication systems.

Key Specifications

ParameterValue
Frequency Range3400-3800 MHz
Output Power32 dBm
LinearityHigh linearity
Amplifier Stages3-stage
Transistor TypeInGaP HBT
Package TypeSOT-89

Key Features

  • High efficiency and linearity, ensuring minimal distortion and optimal performance.
  • Designed for broadband operation, supporting frequencies between 3400-3800 MHz.
  • Three-stage amplifier configuration for enhanced gain and stability.
  • InGaP HBT technology for superior reliability and durability.
  • Compact SOT-89 package, suitable for space-constrained applications.

Applications

The MMZ38333BT1 is primarily used in wireless communication systems, including:

  • Small cells and microcells.
  • LTE and 5G base stations.
  • Wireless infrastructure and network equipment.
  • Other high-frequency communication devices requiring high linearity and efficiency.

Q & A

  1. What is the frequency range of the MMZ38333BT1? The MMZ38333BT1 operates within the frequency range of 3400-3800 MHz.
  2. What is the output power of the MMZ38333BT1? The output power of the MMZ38333BT1 is 32 dBm.
  3. What type of transistor is used in the MMZ38333BT1? The MMZ38333BT1 uses InGaP HBT transistors.
  4. How many stages does the MMZ38333BT1 amplifier have? The MMZ38333BT1 is a 3-stage amplifier.
  5. What is the package type of the MMZ38333BT1? The MMZ38333BT1 comes in a SOT-89 package.
  6. What are the primary applications of the MMZ38333BT1? The MMZ38333BT1 is used in small cells, LTE base stations, and other wireless communication infrastructure.
  7. Why is high linearity important in the MMZ38333BT1? High linearity is crucial for minimizing distortion and ensuring optimal performance in wireless communication systems.
  8. What are the benefits of using InGaP HBT technology in the MMZ38333BT1? InGaP HBT technology offers superior reliability, durability, and performance compared to other transistor types.
  9. Can the MMZ38333BT1 be used in 5G applications? Yes, the MMZ38333BT1 can be used in 5G base stations and other high-frequency communication devices.
  10. Where can I find detailed specifications for the MMZ38333BT1? Detailed specifications can be found in the datasheet available on NXP’s official website or through distributors like Mouser and Digi-Key.

Product Attributes

Frequency:3.4GHz ~ 3.8GHz
P1dB:31.7dBm
Gain:37.9dB
Noise Figure:- 
RF Type:- 
Voltage - Supply:5V
Current - Supply:376mA
Test Frequency:3.6GHz
Mounting Type:Surface Mount
Package / Case:24-VFQFN Exposed Pad
Supplier Device Package:24-HVQFN (4x4)
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