NJVMJD32CT4G-VF01
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onsemi NJVMJD32CT4G-VF01

Manufacturer No:
NJVMJD32CT4G-VF01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 100V 3A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The NJVMJD32CT4G-VF01 is a PNP power transistor manufactured by onsemi. This component is part of the MJD series and is designed for high-performance applications. However, it is important to note that the NJVMJD32CT4G-VF01 is currently obsolete and no longer in production, although substitutes such as the MJD32CT4G are available.

Key Specifications

ParameterValue
Transistor TypePNP
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, IcSee datasheet for specific values
Power Dissipation (Pd)15 W
Gain Bandwidth Product (fT)3 MHz
Minimum Operating Temperature-65°C
Maximum Operating Temperature+150°C

Key Features

  • High current handling capability up to 3 A
  • High voltage tolerance with a collector-emitter breakdown voltage of 100 V
  • Wide operating temperature range from -65°C to +150°C
  • High power dissipation of 15 W
  • Gain bandwidth product of 3 MHz

Applications

The NJVMJD32CT4G-VF01 is suitable for various high-power applications, including but not limited to:

  • Power amplifiers and switching circuits
  • Automotive systems requiring high reliability and temperature tolerance
  • Industrial control systems
  • Audio and power supply circuits

Q & A

  1. What is the transistor type of the NJVMJD32CT4G-VF01? The NJVMJD32CT4G-VF01 is a PNP transistor.
  2. What is the maximum collector current of the NJVMJD32CT4G-VF01? The maximum collector current is 3 A.
  3. What is the maximum collector-emitter breakdown voltage? The maximum collector-emitter breakdown voltage is 100 V.
  4. What is the power dissipation of the NJVMJD32CT4G-VF01? The power dissipation is 15 W.
  5. What is the gain bandwidth product (fT) of the NJVMJD32CT4G-VF01? The gain bandwidth product is 3 MHz.
  6. What is the operating temperature range of the NJVMJD32CT4G-VF01? The operating temperature range is from -65°C to +150°C.
  7. Is the NJVMJD32CT4G-VF01 still in production? No, the NJVMJD32CT4G-VF01 is obsolete and no longer manufactured.
  8. What are some potential substitutes for the NJVMJD32CT4G-VF01? A potential substitute is the MJD32CT4G.
  9. What are some common applications for the NJVMJD32CT4G-VF01? Common applications include power amplifiers, automotive systems, industrial control systems, and audio and power supply circuits.
  10. Where can I find detailed specifications for the NJVMJD32CT4G-VF01? Detailed specifications can be found in the datasheet available from onsemi or through distributors like Mouser and Digi-Key.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number NJVMJD32CT4G-VF01 NJVMJD31CT4G-VF01
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 20µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 25 @ 1A, 4V
Power - Max 1.56 W 1.56 W
Frequency - Transition 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK

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