NJVMJD31CT4G-VF01
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onsemi NJVMJD31CT4G-VF01

Manufacturer No:
NJVMJD31CT4G-VF01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJVMJD31CT4G-VF01 is a high-performance NPN power transistor manufactured by onsemi. This device is designed for general-purpose amplifier and low-speed switching applications. It is part of the NJVMJD3xxT4G-VF01 series, which is electrically similar to the popular TIP31 and TIP32 series. The transistor is packaged in a DPAK (TO-252) case, making it suitable for surface mount applications. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive and other stringent application requirements.

Key Specifications

Characteristic Symbol Max Unit
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current - Continuous IC 3.0 Adc
Collector Current - Peak ICM 5.0 Adc
Base Current IB 1.0 Adc
Total Power Dissipation @ TC = 25°C PD 15 W
Thermal Resistance, Junction-to-Case RJC 8.3 °C/W
Thermal Resistance, Junction-to-Ambient RJA 80 °C/W
Collector-Emitter Saturation Voltage VCE(sat) 1.2 Vdc
Base-Emitter On Voltage VBE(on) 1.8 Vdc
Current Gain - Bandwidth Product fT 3 MHz

Key Features

  • Lead Formed for Surface Mount Applications in Plastic Sleeves
  • Straight Lead Version in Plastic Sleeves (“1” Suffix)
  • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
  • Electrically Similar to Popular TIP31 and TIP32 Series
  • Epoxy Meets UL 94, V-0 @ 0.125 in
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant

Applications

The NJVMJD31CT4G-VF01 is suitable for a variety of applications, including:

  • General-purpose amplifiers
  • Low-speed switching applications
  • Automotive systems requiring AEC-Q101 qualification
  • Industrial control systems
  • Power management circuits

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the NJVMJD31CT4G-VF01?

    The maximum collector-emitter voltage (VCEO) is 100 Vdc.

  2. What is the continuous collector current (IC) rating of this transistor?

    The continuous collector current (IC) rating is 3.0 Adc.

  3. What is the thermal resistance from junction to case (RJC) for this device?

    The thermal resistance from junction to case (RJC) is 8.3 °C/W.

  4. Is the NJVMJD31CT4G-VF01 RoHS compliant?
  5. What is the collector-emitter saturation voltage (VCE(sat)) of this transistor?

    The collector-emitter saturation voltage (VCE(sat)) is 1.2 Vdc.

  6. What is the base-emitter on voltage (VBE(on)) of the NJVMJD31CT4G-VF01?

    The base-emitter on voltage (VBE(on)) is 1.8 Vdc.

  7. What is the current gain-bandwidth product (fT) of this transistor?

    The current gain-bandwidth product (fT) is 3 MHz.

  8. Is the NJVMJD31CT4G-VF01 suitable for automotive applications?
  9. What package type is used for the NJVMJD31CT4G-VF01?

    The NJVMJD31CT4G-VF01 is packaged in a DPAK (TO-252) case.

  10. What are the lead options available for this transistor?

    The transistor is available in straight lead and lead formed versions, with options for 16 mm tape and reel.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 1A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number NJVMJD31CT4G-VF01 NJVMJD32CT4G-VF01 NJVMJD41CT4G-VF01
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
Transistor Type NPN PNP -
Current - Collector (Ic) (Max) 3 A 3 A -
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V -
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A -
Current - Collector Cutoff (Max) 50µA 20µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 4V 10 @ 3A, 4V -
Power - Max 1.56 W 1.56 W -
Frequency - Transition 3MHz 3MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 -
Supplier Device Package DPAK DPAK -

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