Overview
The NJVMJD31CT4G-VF01 is a high-performance NPN power transistor manufactured by onsemi. This device is designed for general-purpose amplifier and low-speed switching applications. It is part of the NJVMJD3xxT4G-VF01 series, which is electrically similar to the popular TIP31 and TIP32 series. The transistor is packaged in a DPAK (TO-252) case, making it suitable for surface mount applications. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive and other stringent application requirements.
Key Specifications
Characteristic | Symbol | Max | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 100 | Vdc |
Collector-Base Voltage | VCBO | 100 | Vdc |
Emitter-Base Voltage | VEB | 5.0 | Vdc |
Collector Current - Continuous | IC | 3.0 | Adc |
Collector Current - Peak | ICM | 5.0 | Adc |
Base Current | IB | 1.0 | Adc |
Total Power Dissipation @ TC = 25°C | PD | 15 | W |
Thermal Resistance, Junction-to-Case | RJC | 8.3 | °C/W |
Thermal Resistance, Junction-to-Ambient | RJA | 80 | °C/W |
Collector-Emitter Saturation Voltage | VCE(sat) | 1.2 | Vdc |
Base-Emitter On Voltage | VBE(on) | 1.8 | Vdc |
Current Gain - Bandwidth Product | fT | 3 | MHz |
Key Features
- Lead Formed for Surface Mount Applications in Plastic Sleeves
- Straight Lead Version in Plastic Sleeves (“1” Suffix)
- Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
- Electrically Similar to Popular TIP31 and TIP32 Series
- Epoxy Meets UL 94, V-0 @ 0.125 in
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free and RoHS Compliant
Applications
The NJVMJD31CT4G-VF01 is suitable for a variety of applications, including:
- General-purpose amplifiers
- Low-speed switching applications
- Automotive systems requiring AEC-Q101 qualification
- Industrial control systems
- Power management circuits
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the NJVMJD31CT4G-VF01?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current (IC) rating of this transistor?
The continuous collector current (IC) rating is 3.0 Adc.
- What is the thermal resistance from junction to case (RJC) for this device?
The thermal resistance from junction to case (RJC) is 8.3 °C/W.
- Is the NJVMJD31CT4G-VF01 RoHS compliant?
- What is the collector-emitter saturation voltage (VCE(sat)) of this transistor?
The collector-emitter saturation voltage (VCE(sat)) is 1.2 Vdc.
- What is the base-emitter on voltage (VBE(on)) of the NJVMJD31CT4G-VF01?
The base-emitter on voltage (VBE(on)) is 1.8 Vdc.
- What is the current gain-bandwidth product (fT) of this transistor?
The current gain-bandwidth product (fT) is 3 MHz.
- Is the NJVMJD31CT4G-VF01 suitable for automotive applications?
- What package type is used for the NJVMJD31CT4G-VF01?
The NJVMJD31CT4G-VF01 is packaged in a DPAK (TO-252) case.
- What are the lead options available for this transistor?
The transistor is available in straight lead and lead formed versions, with options for 16 mm tape and reel.