NJVMJD41CT4G-VF01
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onsemi NJVMJD41CT4G-VF01

Manufacturer No:
NJVMJD41CT4G-VF01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 6A DPAK-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJVMJD41CT4G-VF01 is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This device is housed in a TO-252-3 (DPAK) package, which is lead-free and suitable for surface mount applications. The NJVMJD41CT4G-VF01 is designed to handle high current and voltage levels, making it ideal for various power management and control applications.

Key Specifications

Characteristic Symbol Min Max Unit
Collector-Emitter Sustaining Voltage VCEO(sus) 100 - Vdc
Collector Cutoff Current ICEO - 50 μAdc
Collector Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES - 10 μAdc
Emitter Cutoff Current IEBO - 0.5 mAdc
Thermal Resistance, Junction-to-Case RθJC - 6.25 °C/W
Thermal Resistance, Junction-to-Ambient RθJA - 71.4 °C/W

Key Features

  • High Power Handling: Capable of handling high current and voltage levels, making it suitable for power management and control applications.
  • Low Collector Cutoff Current: Ensures minimal leakage current when the transistor is in the off state.
  • Compact DPAK Package: The TO-252-3 package is lead-free and designed for surface mount applications, offering space-efficient mounting.
  • Robust Thermal Characteristics: Features thermal resistance values that ensure reliable operation under various temperature conditions.

Applications

  • Power Supplies: Suitable for use in power supply circuits due to its high power handling capabilities.
  • Motor Control: Can be used in motor control circuits to manage high current flows efficiently.
  • Automotive Systems: Applicable in automotive systems where high reliability and robust performance are required.
  • Industrial Automation: Used in industrial automation for controlling and managing high-power devices.

Q & A

  1. What is the NJVMJD41CT4G-VF01?

    The NJVMJD41CT4G-VF01 is an NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for high-power applications.

  2. What is the package type of the NJVMJD41CT4G-VF01?

    The device is housed in a TO-252-3 (DPAK) package, which is lead-free and suitable for surface mount applications.

  3. What are the key electrical characteristics of the NJVMJD41CT4G-VF01?

    Key characteristics include a collector-emitter sustaining voltage of 100 Vdc, collector cutoff current of 50 μAdc, and emitter cutoff current of 0.5 mAdc.

  4. What are the thermal characteristics of the NJVMJD41CT4G-VF01?

    The device has a thermal resistance from junction to case of 6.25 °C/W and from junction to ambient of 71.4 °C/W.

  5. In what applications is the NJVMJD41CT4G-VF01 commonly used?

    It is commonly used in power supplies, motor control, automotive systems, and industrial automation.

  6. What are the advantages of using the NJVMJD41CT4G-VF01?

    Advantages include high power handling, low collector cutoff current, compact packaging, and robust thermal characteristics.

  7. Are there any equivalents or alternatives to the NJVMJD41CT4G-VF01?

    Alternatives include other NPN BJTs from different manufacturers, such as the NJVMJD31CT4G-VF01 from onsemi.

  8. How do I ensure proper thermal management for the NJVMJD41CT4G-VF01?

    Proper thermal management can be achieved by ensuring the device is mounted on the recommended pad sizes and using appropriate heatsinking if necessary.

  9. Is the NJVMJD41CT4G-VF01 RoHS compliant?

    Yes, the NJVMJD41CT4G-VF01 is lead-free and RoHS compliant.

  10. Where can I find detailed datasheet information for the NJVMJD41CT4G-VF01?

    Detailed datasheet information can be found on the onsemi website or through authorized distributors like Mouser Electronics.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number NJVMJD41CT4G-VF01 NJVMJD31CT4G-VF01
Manufacturer onsemi onsemi
Product Status Active Obsolete
Transistor Type - NPN
Current - Collector (Ic) (Max) - 3 A
Voltage - Collector Emitter Breakdown (Max) - 100 V
Vce Saturation (Max) @ Ib, Ic - 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) - 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce - 25 @ 1A, 4V
Power - Max - 1.56 W
Frequency - Transition - 3MHz
Operating Temperature - -65°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package - DPAK

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