FOD817B3SD
  • Share:

onsemi FOD817B3SD

Manufacturer No:
FOD817B3SD
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
OPTOISOLATOR 5KV TRANSISTOR 4SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FOD817B3SD is a 4-pin DIP phototransistor optocoupler produced by onsemi. This device consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a dual in-line package. The FOD817 series is designed to provide high isolation and reliability, making it suitable for various applications requiring optical isolation and signal transfer.

Key Specifications

Parameter Device Test Conditions Min Max Unit
CTR (Current Transfer Ratio) FOD817B IF = 5 mA, VCE = 5 V 130 260 %
VCE(SAT) (Collector-Emitter Saturation Voltage) FOD817 IF = 20 mA, IC = 1 mA 0.1 0.2 V
BVCEO (Collector-Emitter Breakdown Voltage) FOD817 IC = 0.1 mA, IF = 0 70 V
BVECO (Emitter-Collector Breakdown Voltage) FOD817 IE = 10 µA, IF = 0 6 V
VIORM (Maximum Working Insulation Voltage) FOD817 850 Vpeak
VIOTM (Highest Allowable Over-Voltage) FOD817 8000 Vpeak
External Creepage FOD817 ≥ 7 mm
External Clearance FOD817 ≥ 7 mm

Key Features

  • AC Input Response: The FOD817B3SD is capable of handling AC inputs, making it suitable for applications such as AC line monitoring.
  • High Current Transfer Ratio (CTR): The FOD817B has a CTR range of 130% to 260%, ensuring reliable signal transfer.
  • High Isolation Voltage: With a maximum working insulation voltage of 850 Vpeak and an input-output isolation voltage of 5000 VACRMS for 1 minute, this device provides high electrical isolation.
  • Safety and Regulatory Approvals: Compliant with UL1577 and DIN EN/IEC60747-5-5 standards, ensuring safety and reliability in various applications.
  • Low Collector-Emitter Saturation Voltage: The device has a low VCE(SAT) of 0.1 to 0.2 V, which is beneficial for low-power applications.

Applications

  • Power Supply Regulators: Used in power supply circuits to provide isolated feedback and control signals.
  • Digital Logic Inputs: Suitable for interfacing digital logic signals across different voltage domains while maintaining electrical isolation.
  • Microprocessor Inputs: Can be used to isolate microprocessor inputs from external signals, enhancing system reliability and safety.
  • Telephone Line Interface: Although more commonly associated with the FOD814, the FOD817 series can also be used in telephone line interfaces where isolation is critical.

Q & A

  1. What is the package type of the FOD817B3SD?

    The FOD817B3SD is available in a 4-pin SMT (Surface Mount Technology) package with lead bend, and it is also available in tape and reel packaging.

  2. What is the current transfer ratio (CTR) range for the FOD817B?

    The CTR range for the FOD817B is 130% to 260%.

  3. What are the safety and regulatory approvals for the FOD817 series?

    The FOD817 series is compliant with UL1577 and DIN EN/IEC60747-5-5 standards.

  4. What is the maximum working insulation voltage for the FOD817 series?

    The maximum working insulation voltage (VIORM) is 850 Vpeak.

  5. What is the collector-emitter breakdown voltage for the FOD817?

    The collector-emitter breakdown voltage (BVCEO) is 70 V.

  6. What are typical applications for the FOD817 series?

    Typical applications include power supply regulators, digital logic inputs, and microprocessor inputs.

  7. What is the external creepage and clearance for the FOD817 series?

    The external creepage and clearance are both ≥ 7 mm.

  8. What is the highest allowable over-voltage for the FOD817 series?

    The highest allowable over-voltage (VIOTM) is 8000 Vpeak.

  9. What is the collector-emitter saturation voltage for the FOD817?

    The collector-emitter saturation voltage (VCE(SAT)) is 0.1 to 0.2 V.

  10. How does the FOD817B3SD handle AC inputs?

    The FOD817B3SD is capable of handling AC inputs due to its design, which includes gallium arsenide infrared emitting diodes driving a silicon phototransistor.

Product Attributes

Number of Channels:1
Voltage - Isolation:5000Vrms
Current Transfer Ratio (Min):130% @ 5mA
Current Transfer Ratio (Max):260% @ 5mA
Turn On / Turn Off Time (Typ):- 
Rise / Fall Time (Typ):4µs, 3µs
Input Type:DC
Output Type:Transistor
Voltage - Output (Max):70V
Current - Output / Channel:50mA
Voltage - Forward (Vf) (Typ):1.2V
Current - DC Forward (If) (Max):50 mA
Vce Saturation (Max):200mV
Operating Temperature:-55°C ~ 110°C
Mounting Type:Surface Mount
Package / Case:4-SMD, Gull Wing
Supplier Device Package:4-SMD
0 Remaining View Similar

In Stock

$0.57
1,691

Please send RFQ , we will respond immediately.

Same Series
FOD817S
FOD817S
TRANSISTOR OUTPUT OPTOCOUPLER, 5
FOD817D
FOD817D
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD817300
FOD817300
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD817AS
FOD817AS
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD817C
FOD817C
TRANSISTOR OUTPUT OPTOCOUPLER, 5
FOD8173SD
FOD8173SD
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD817BSD
FOD817BSD
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD814A3SD
FOD814A3SD
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD817A3S
FOD817A3S
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD817B
FOD817B
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD817A300W
FOD817A300W
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD817W
FOD817W
TRANSISTOR OUTPUT OPTOCOUPLER

Related Product By Categories

ACPL-M50L-500E
ACPL-M50L-500E
Broadcom Limited
OPTOISOLATOR 3.75KV TRANS 5-SO
FODM2705R2
FODM2705R2
onsemi
OPTOISO 3.75KV TRANSISTOR 4SMD
CNY17-3M
CNY17-3M
Everlight Electronics Co Ltd
OPTOISO 5KV TRANS W/BASE 6DIP
CNY17-2M-V
CNY17-2M-V
Everlight Electronics Co Ltd
OPTOISO 5KV TRANS W/BASE 6DIP
TLP109(IGM,E)
TLP109(IGM,E)
Toshiba Semiconductor and Storage
OPTOISO 3.75KV TRANS 6-SO 5 LEAD
PC817X7J000F
PC817X7J000F
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4DIP
PC81718NIP0X
PC81718NIP0X
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4SMD
PC817X2NIP1B
PC817X2NIP1B
SHARP/Socle Technology
OPTOISOLATOR 5KV TRANS SMD
PC817XNNIP1B
PC817XNNIP1B
SHARP/Socle Technology
OPTOISOLATOR 5KV TRANS SMD
PC817X2NSZ9F
PC817X2NSZ9F
SHARP/Socle Technology
PHOTOCOUPLER
PC817X3NSZ9F
PC817X3NSZ9F
SHARP/Socle Technology
PHOTOCOUPLER
TLP627MF(TP4,E
TLP627MF(TP4,E
Toshiba Semiconductor and Storage
DC INPUT PHOTOCOUPLER; DIP4; WID

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT