FOD817B3SD
  • Share:

onsemi FOD817B3SD

Manufacturer No:
FOD817B3SD
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
OPTOISOLATOR 5KV TRANSISTOR 4SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FOD817B3SD is a 4-pin DIP phototransistor optocoupler produced by onsemi. This device consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a dual in-line package. The FOD817 series is designed to provide high isolation and reliability, making it suitable for various applications requiring optical isolation and signal transfer.

Key Specifications

Parameter Device Test Conditions Min Max Unit
CTR (Current Transfer Ratio) FOD817B IF = 5 mA, VCE = 5 V 130 260 %
VCE(SAT) (Collector-Emitter Saturation Voltage) FOD817 IF = 20 mA, IC = 1 mA 0.1 0.2 V
BVCEO (Collector-Emitter Breakdown Voltage) FOD817 IC = 0.1 mA, IF = 0 70 V
BVECO (Emitter-Collector Breakdown Voltage) FOD817 IE = 10 µA, IF = 0 6 V
VIORM (Maximum Working Insulation Voltage) FOD817 850 Vpeak
VIOTM (Highest Allowable Over-Voltage) FOD817 8000 Vpeak
External Creepage FOD817 ≥ 7 mm
External Clearance FOD817 ≥ 7 mm

Key Features

  • AC Input Response: The FOD817B3SD is capable of handling AC inputs, making it suitable for applications such as AC line monitoring.
  • High Current Transfer Ratio (CTR): The FOD817B has a CTR range of 130% to 260%, ensuring reliable signal transfer.
  • High Isolation Voltage: With a maximum working insulation voltage of 850 Vpeak and an input-output isolation voltage of 5000 VACRMS for 1 minute, this device provides high electrical isolation.
  • Safety and Regulatory Approvals: Compliant with UL1577 and DIN EN/IEC60747-5-5 standards, ensuring safety and reliability in various applications.
  • Low Collector-Emitter Saturation Voltage: The device has a low VCE(SAT) of 0.1 to 0.2 V, which is beneficial for low-power applications.

Applications

  • Power Supply Regulators: Used in power supply circuits to provide isolated feedback and control signals.
  • Digital Logic Inputs: Suitable for interfacing digital logic signals across different voltage domains while maintaining electrical isolation.
  • Microprocessor Inputs: Can be used to isolate microprocessor inputs from external signals, enhancing system reliability and safety.
  • Telephone Line Interface: Although more commonly associated with the FOD814, the FOD817 series can also be used in telephone line interfaces where isolation is critical.

Q & A

  1. What is the package type of the FOD817B3SD?

    The FOD817B3SD is available in a 4-pin SMT (Surface Mount Technology) package with lead bend, and it is also available in tape and reel packaging.

  2. What is the current transfer ratio (CTR) range for the FOD817B?

    The CTR range for the FOD817B is 130% to 260%.

  3. What are the safety and regulatory approvals for the FOD817 series?

    The FOD817 series is compliant with UL1577 and DIN EN/IEC60747-5-5 standards.

  4. What is the maximum working insulation voltage for the FOD817 series?

    The maximum working insulation voltage (VIORM) is 850 Vpeak.

  5. What is the collector-emitter breakdown voltage for the FOD817?

    The collector-emitter breakdown voltage (BVCEO) is 70 V.

  6. What are typical applications for the FOD817 series?

    Typical applications include power supply regulators, digital logic inputs, and microprocessor inputs.

  7. What is the external creepage and clearance for the FOD817 series?

    The external creepage and clearance are both ≥ 7 mm.

  8. What is the highest allowable over-voltage for the FOD817 series?

    The highest allowable over-voltage (VIOTM) is 8000 Vpeak.

  9. What is the collector-emitter saturation voltage for the FOD817?

    The collector-emitter saturation voltage (VCE(SAT)) is 0.1 to 0.2 V.

  10. How does the FOD817B3SD handle AC inputs?

    The FOD817B3SD is capable of handling AC inputs due to its design, which includes gallium arsenide infrared emitting diodes driving a silicon phototransistor.

Product Attributes

Number of Channels:1
Voltage - Isolation:5000Vrms
Current Transfer Ratio (Min):130% @ 5mA
Current Transfer Ratio (Max):260% @ 5mA
Turn On / Turn Off Time (Typ):- 
Rise / Fall Time (Typ):4µs, 3µs
Input Type:DC
Output Type:Transistor
Voltage - Output (Max):70V
Current - Output / Channel:50mA
Voltage - Forward (Vf) (Typ):1.2V
Current - DC Forward (If) (Max):50 mA
Vce Saturation (Max):200mV
Operating Temperature:-55°C ~ 110°C
Mounting Type:Surface Mount
Package / Case:4-SMD, Gull Wing
Supplier Device Package:4-SMD
0 Remaining View Similar

In Stock

$0.57
1,691

Please send RFQ , we will respond immediately.

Same Series
FOD817300
FOD817300
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD817AS
FOD817AS
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD817A300
FOD817A300
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD817300W
FOD817300W
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD817CSD
FOD817CSD
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD817C3SD
FOD817C3SD
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD817B3S
FOD817B3S
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD817A300W
FOD817A300W
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD814A300
FOD814A300
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD814300W
FOD814300W
OPTOISOLATOR 5KV TRANSISTOR 4DIP
FOD817C3S
FOD817C3S
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD814W
FOD814W
OPTOISOLATOR 5KV TRANSISTOR 4DIP

Related Product By Categories

HCPL-181-00DE
HCPL-181-00DE
Broadcom Limited
OPTOISO 3.75KV TRANS 4MINIFLAT
FODM2705R2
FODM2705R2
onsemi
OPTOISO 3.75KV TRANSISTOR 4SMD
TLP185(BLL-TR,SE
TLP185(BLL-TR,SE
Toshiba Semiconductor and Storage
X36 PB PHOTOCOUPLER SO6 ROHS TAP
TLP185(GB,E)
TLP185(GB,E)
Toshiba Semiconductor and Storage
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
PC817X2
PC817X2
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4DIP
PC81713NIP
PC81713NIP
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4SMD
PC81710NIP
PC81710NIP
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4SMD
PC817X0J000F
PC817X0J000F
Sharp Microelectronics
OPTOISOLATOR 5KV TRANS 4DIP
PS2801-4-F4-A
PS2801-4-F4-A
CEL
OPTOISO 2.5KV 4CH TRANS 16-SSOP
TLP185(V4GBTL,SE
TLP185(V4GBTL,SE
Toshiba Semiconductor and Storage
OPTOCOUPLER TRANS
TLP127(TEE-TPLS,F)
TLP127(TEE-TPLS,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER SMD
TLP127(MBS-TPL,F)
TLP127(MBS-TPL,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER SMD

Related Product By Brand

MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB