Overview
The MC33153DR2, produced by onsemi, is a single IGBT gate driver designed for high-power applications. It is particularly suited for controlling AC induction motors, brushless DC motors, and uninterruptable power supplies. This device offers a cost-effective solution for driving discrete and module IGBTs, as well as power MOSFETs and bipolar transistors. The MC33153DR2 features advanced protection circuits, including desaturation or overcurrent sensing and undervoltage detection, ensuring reliable operation in demanding environments.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Power Supply Voltage (VCC to VEE) | VCC - VEE | - | - | 20 | V |
| Logic Input Voltage | Vin | VEE - 0.3 | - | VCC | V |
| Gate Drive Output Source Current | ISource | - | - | 1.0 | A |
| Gate Drive Output Sink Current | ISink | - | - | 2.0 | A |
| Propagation Delay (50% Input to 50% Output) | tPLH(in/out), tPHL(in/out) | 80 | 120 | 300 | ns |
| Drive Output Rise Time (10% to 90%) | tr | 17 | - | 55 | ns |
| Drive Output Fall Time (90% to 10%) | tf | 17 | - | 55 | ns |
| Operating Temperature Range | Tlow to Thigh | -40 | - | 105 | °C |
Key Features
- High Current Output Stage: 1.0 A Source/2.0 A Sink
- Protection Circuits for Both Conventional and Sense IGBTs
- Programmable Fault Blanking Time
- Protection against Overcurrent and Short Circuit
- Undervoltage Lockout Optimized for IGBTs
- Negative Gate Drive Capability
- Cost-Effective Solution for Driving Power MOSFETs and Bipolar Transistors
- Pb-Free and Halide-Free Device
Applications
The MC33153DR2 is designed for various high-power applications, including:
- AC Induction Motor Control
- Brushless DC Motor Control
- Uninterruptable Power Supplies (UPS)
- Power MOSFET and Bipolar Transistor Driving
Q & A
- What is the primary function of the MC33153DR2?
The MC33153DR2 is a single IGBT gate driver designed for high-power applications, including AC induction motor control, brushless DC motor control, and uninterruptable power supplies.
- What are the key protection features of the MC33153DR2?
The device features desaturation or overcurrent sensing, undervoltage detection, and protection against short circuits.
- What is the maximum gate drive output current of the MC33153DR2?
The device can source up to 1.0 A and sink up to 2.0 A.
- What is the operating temperature range of the MC33153DR2?
The operating temperature range is from -40°C to +105°C.
- Can the MC33153DR2 be used with optoisolators?
Yes, the MC33153DR2 can be used with optoisolators to provide level shifting and isolation from AC line voltages.
- What is the purpose of the undervoltage lockout (UVLO) in the MC33153DR2?
The UVLO protects the IGBT from insufficient gate voltage, ensuring it does not operate in the linear region and overheat.
- How does the fault blanking function work in the MC33153DR2?
The fault blanking function allows the device to ignore the fault signal during the turn-on period to account for the time it takes for the free-wheeling diode to clear and the ringing to settle out.
- What types of packages are available for the MC33153DR2?
The device is available in dual-in-line (DIP-8) and surface mount (SOIC-8) packages.
- Is the MC33153DR2 Pb-Free and Halide-Free?
Yes, the MC33153DR2 is a Pb-Free and Halide-Free device.
- Can the MC33153DR2 drive power MOSFETs and bipolar transistors?
Yes, the device can cost-effectively drive power MOSFETs and bipolar transistors in addition to IGBTs.
