MC33153PG
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onsemi MC33153PG

Manufacturer No:
MC33153PG
Manufacturer:
onsemi
Package:
Tube
Description:
IC GATE DRVR LOW-SIDE 8DIP
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The MC33153PG, produced by onsemi, is a single IGBT gate driver designed for high power applications. This device is optimized for driving discrete and module IGBTs, but it also offers a cost-effective solution for driving power MOSFETs and bipolar transistors. It is particularly suited for applications such as AC induction motor control, brushless DC motor control, and uninterruptable power supplies. The MC33153PG features advanced protection circuits, including desaturation or overcurrent sensing and undervoltage detection, making it a reliable choice for demanding power management tasks.

Key Specifications

CharacteristicValueUnit
Logic TypeCMOS
Output Current2 A (Sink), 1 A (Source)A
Supply Voltage20 VV
Pin Count8
Package TypePDIP
Number of Outputs1
Driver TypeMOSFET
TopologyHigh and Low Side
Bridge TypeHalf Bridge
PolarityInverting
Mounting TypeThrough Hole
Height5.33 mmmm
Length10.02 mmmm
Maximum Operating Temperature+105 °C°C

Key Features

  • High Current Output Stage: 1.0 A Source / 2.0 A Sink
  • Protection Circuits for Both Conventional and Sense IGBTs
  • Programmable Fault Blanking Time
  • Protection against Overcurrent and Short Circuit
  • Undervoltage Lockout Optimized for IGBTs
  • Negative Gate Drive Capability
  • Cost-Effective Solution for Driving Power MOSFETs and Bipolar Transistors
  • Pb-Free and Halide-Free Device

Applications

The MC33153PG is designed for various high power applications, including:

  • AC induction motor control
  • Brushless DC motor control
  • Uninterruptable power supplies

Q & A

  1. What is the primary function of the MC33153PG?
    The MC33153PG is a single IGBT gate driver designed for high power applications, primarily for driving discrete and module IGBTs, as well as power MOSFETs and bipolar transistors.
  2. What are the key protection features of the MC33153PG?
    The device includes protection circuits for desaturation or overcurrent sensing, undervoltage detection, and protection against overcurrent and short circuits.
  3. What is the output current capability of the MC33153PG?
    The device can source 1 A and sink 2 A of current.
  4. What is the maximum operating temperature of the MC33153PG?
    The maximum operating temperature is +105 °C.
  5. What package types are available for the MC33153PG?
    The device is available in dual-in-line (PDIP) and surface mount packages.
  6. Can the MC33153PG be used with optically isolated inputs?
    Yes, the MC33153PG can be used with optically isolated inputs, such as optoisolators, to provide level shifting and isolation from AC line voltages.
  7. What is the purpose of the fault blanking time in the MC33153PG?
    The fault blanking time allows the IGBT to clear the opposing free-wheeling diode during turn-on and settles out any ringing on the collector due to parasitic wiring inductance.
  8. Is the MC33153PG Pb-Free and Halide-Free?
    Yes, the MC33153PG is a Pb-Free and Halide-Free device.
  9. What are the typical applications of the MC33153PG?
    The device is typically used in AC induction motor control, brushless DC motor control, and uninterruptable power supplies.
  10. How does the MC33153PG handle undervoltage conditions?
    The device features an undervoltage lockout optimized for IGBTs to protect against insufficient gate voltage.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Single
Number of Drivers:1
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:11V ~ 20V
Logic Voltage - VIL, VIH:1.2V, 3.2V
Current - Peak Output (Source, Sink):1A, 2A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):17ns, 17ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:8-DIP (0.300", 7.62mm)
Supplier Device Package:8-PDIP
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Similar Products

Part Number MC33153PG MC33151PG MC33152PG MC33153P
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side
Channel Type Single Independent Independent Single
Number of Drivers 1 2 2 1
Gate Type IGBT, N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 11V ~ 20V 6.5V ~ 18V 6.1V ~ 18V 11V ~ 20V
Logic Voltage - VIL, VIH 1.2V, 3.2V 0.8V, 2.6V 0.8V, 2.6V 1.2V, 3.2V
Current - Peak Output (Source, Sink) 1A, 2A 1.5A, 1.5A 1.5A, 1.5A 1A, 2A
Input Type Inverting Inverting Non-Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - -
Rise / Fall Time (Typ) 17ns, 17ns 31ns, 32ns 36ns, 32ns 17ns, 17ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm)
Supplier Device Package 8-PDIP 8-PDIP 8-PDIP 8-PDIP

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