IR2103STRPBF
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Infineon Technologies IR2103STRPBF

Manufacturer No:
IR2103STRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The IR2103STRPBF, produced by Infineon Technologies, is a high-voltage, high-speed half-bridge gate driver IC designed for driving power MOSFETs and IGBTs. This IC features proprietary HVIC and latch immune CMOS technologies, enabling ruggedized monolithic construction. It is fully operational up to 600 volts and is compatible with various logic input levels, making it versatile for a range of applications.

Key Specifications

ParameterValueUnitsTest Conditions
Voltage Rating (VS)-5 to +600V
Gate Drive Supply Range10 to 20V
Logic Input Compatibility3.3V, 5V, 15V
Turn-on Propagation Delay (ton)680 to 820nsVS = 0V
Turn-off Propagation Delay (toff)150 to 220nsVS = 600V
Deadtime400 to 520ns
Output Current (IO+/-)130mA / 270mA
Package Options8 Lead SOIC, 8 Lead PDIP

Key Features

  • Floating channel designed for bootstrap operation
  • Fully operational to +600V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Undervoltage lockout
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • Internal set deadtime
  • High side output in phase with HIN input, low side output out of phase with LIN input

Applications

The IR2103STRPBF is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor drives and control systems
  • Industrial power systems and inverters
  • Automotive systems requiring high-voltage gate drivers

Q & A

  1. What is the voltage rating of the IR2103STRPBF?
    The IR2103STRPBF is fully operational up to +600V and can tolerate negative transient voltages down to -5V.
  2. What are the package options for the IR2103STRPBF?
    The IR2103STRPBF is available in 8 Lead SOIC and 8 Lead PDIP packages.
  3. Is the IR2103STRPBF compatible with different logic input levels?
    Yes, it is compatible with 3.3V, 5V, and 15V logic inputs.
  4. What is the typical turn-on propagation delay of the IR2103STRPBF?
    The typical turn-on propagation delay is 680 ns.
  5. Does the IR2103STRPBF have cross-conduction prevention logic?
    Yes, it features cross-conduction prevention logic to prevent simultaneous conduction of the high and low side outputs.
  6. What is the deadtime of the IR2103STRPBF?
    The deadtime ranges from 400 to 520 ns.
  7. Is the IR2103STRPBF dV/dt immune?
    Yes, it is immune to dV/dt effects.
  8. What is the output current capability of the IR2103STRPBF?
    The output current is typically 130mA source and 270mA sink.
  9. Does the IR2103STRPBF have undervoltage lockout?
    Yes, it includes undervoltage lockout for protection.
  10. Is the IR2103STRPBF RoHS compliant?
    Yes, the IR2103STRPBF is RoHS compliant.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 3V
Current - Peak Output (Source, Sink):210mA, 360mA
Input Type:Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):100ns, 50ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number IR2103STRPBF IR2104STRPBF IR2109STRPBF IR2108STRPBF IR2106STRPBF IR2113STRPBF IR2101STRPBF IR2102STRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Synchronous Synchronous Independent Independent Independent Independent Independent
Number of Drivers 2 2 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 3.3V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 3V 0.8V, 3V 0.8V, 2.9V 0.8V, 2.9V 0.8V, 2.9V 6V, 9.5V 0.8V, 3V 0.8V, 3V
Current - Peak Output (Source, Sink) 210mA, 360mA 210mA, 360mA 200mA, 350mA 200mA, 350mA 200mA, 350mA 2A, 2A 210mA, 360mA 210mA, 360mA
Input Type Inverting, Non-Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting -
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 100ns, 50ns 100ns, 50ns 150ns, 50ns 150ns, 50ns 150ns, 50ns 25ns, 17ns 100ns, 50ns 100ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 16-SOIC (0.295", 7.50mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 16-SOIC 8-SOIC 8-SOIC

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