L6386ED013TR
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STMicroelectronics L6386ED013TR

Manufacturer No:
L6386ED013TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 14SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The L6386E, specifically the L6386ED013TR, is a high voltage gate driver manufactured by STMicroelectronics using BCD™ 'offline' technology. This device is capable of driving simultaneously one high-side and one low-side power MOSFET or IGBT. It is designed to operate with a high voltage rail up to 600 V and features integrated bootstrap diode and undervoltage lockout (UVLO) protection on both supply voltages. The L6386E ensures high reliability and compactness, making it suitable for various industrial and consumer applications.

Key Specifications

Parameter Value Unit
High voltage rail Up to 600 V
dV/dt immunity ± 50 V/nsec
Driver current capability (source) 400 mA
Driver current capability (sink) 650 mA
Switching times (rise/fall) 50/30 nsec nsec
Logic input voltage -0.3 to VCC + 0.3 V
Junction temperature -45 to 125 °C
Storage temperature -50 to 150 °C
Thermal resistance junction to ambient (SO-14) 165 °C/W
Thermal resistance junction to ambient (DIP-14) 100 °C/W

Key Features

  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability: 400 mA source, 650 mA sink
  • Switching times: 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Undervoltage lockout on lower and upper driving sections
  • Integrated bootstrap diode
  • Outputs in phase with inputs
  • Diagnostic output for fault signaling

Applications

  • Home appliances
  • Induction heating
  • Industrial applications and drives
  • Motor drivers (SR motors, DC, AC, PMDC, and PMAC motors)
  • Asymmetrical half-bridge topologies
  • HVAC
  • Lighting applications
  • Factory automation
  • Power supply systems

Q & A

  1. What is the maximum high voltage rail for the L6386E?

    The maximum high voltage rail for the L6386E is up to 600 V.

  2. What is the driver current capability of the L6386E?

    The L6386E can source 400 mA and sink 650 mA.

  3. What is the switching time for the L6386E with a 1 nF load?

    The switching times are 50/30 nsec for rise/fall with a 1 nF load.

  4. Does the L6386E have integrated protection features?

    Yes, it features undervoltage lockout (UVLO) on both supply voltages and a diagnostic output for fault signaling.

  5. What types of inputs does the L6386E support?

    The L6386E supports CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down.

  6. What is the purpose of the integrated bootstrap diode in the L6386E?

    The integrated bootstrap diode allows for a more compact and reliable solution by eliminating the need for an external high voltage fast recovery diode.

  7. What are the typical applications of the L6386E?

    The L6386E is used in home appliances, induction heating, industrial applications, motor drivers, HVAC, lighting applications, factory automation, and power supply systems.

  8. What are the packaging options for the L6386E?

    The L6386E is available in DIP-14 and SO-14 packages, as well as tape and reel options.

  9. What is the thermal resistance junction to ambient for the SO-14 and DIP-14 packages?

    The thermal resistance junction to ambient is 165 °C/W for SO-14 and 100 °C/W for DIP-14 packages.

  10. What is the storage temperature range for the L6386E?

    The storage temperature range is -50 to 150 °C.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:17V (Max)
Logic Voltage - VIL, VIH:1.5V, 3.6V
Current - Peak Output (Source, Sink):400mA, 650mA
Input Type:Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):50ns, 30ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:14-SO
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Same Series
L6386ED013TR
L6386ED013TR
IC GATE DRVR HALF-BRIDGE 14SO
L6386E
L6386E
IC GATE DRVR HALF-BRIDGE 14DIP

Similar Products

Part Number L6386ED013TR L6387ED013TR L6388ED013TR L6384ED013TR L6385ED013TR L6386D013TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Synchronous Independent Independent
Number of Drivers 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 17V (Max) 17V (Max) 17V (Max) 14.6V ~ 16.6V 17V (Max) 17V (Max)
Logic Voltage - VIL, VIH 1.5V, 3.6V 1.5V, 3.6V 1.1V, 1.8V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V
Current - Peak Output (Source, Sink) 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA
Input Type Inverting Inverting Non-Inverting Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 50ns, 30ns 50ns, 30ns 70ns, 40ns 50ns, 30ns 50ns, 30ns 50ns, 30ns
Operating Temperature -40°C ~ 150°C (TJ) -45°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 14-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package 14-SO 8-SOIC 8-SOIC 8-SOIC 8-SOIC 14-SO

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