L6384ED013TR
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STMicroelectronics L6384ED013TR

Manufacturer No:
L6384ED013TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The L6384E, produced by STMicroelectronics, is a high-voltage gate driver designed to drive a half-bridge of power MOSFET or IGBT devices. It is manufactured using the BCD™ “offline” technology, enabling it to operate with a high voltage rail up to 600 V. This device is particularly suited for applications requiring robust and reliable gate driving in high-voltage environments.

Key Specifications

Parameter Value Unit
High Voltage Rail Up to 600 V V
dV/dt Immunity ± 50 V/nsec V/nsec
Driver Current Capability 400 mA source, 650 mA sink mA
Switching Times 50/30 nsec rise/fall with 1 nF load nsec
Logic Inputs CMOS/TTL Schmitt trigger with hysteresis and pull-down -
Shutdown Input High impedance pin with shutdown functionality -
Deadtime Setting Tunable by external resistor (0.4 - 3.1 μs) μs
Undervoltage Lockout (UVLO) Protection with voltage clamp on VCC -
Integrated Bootstrap Diode Patented structure replacing external diode -
Package Options DIP-8, SO-8 -
Junction Temperature -45 to 125 °C °C
Total Power Dissipation 750 mW (Tj = 85 °C) mW

Key Features

  • High voltage rail up to 600 V, making it suitable for high-voltage applications.
  • High dV/dt immunity (± 50 V/nsec) across the full temperature range.
  • Driver current capability of 400 mA source and 650 mA sink.
  • Fast switching times with 50/30 nsec rise/fall times for a 1 nF load.
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down for robust logic handling.
  • Shutdown input and deadtime setting functionality to prevent cross-conduction and ensure safe operation.
  • Undervoltage lockout (UVLO) protection and voltage clamp on the VCC supply voltage.
  • Integrated bootstrap diode, eliminating the need for an external diode and reducing leakage losses.

Applications

  • Home appliances
  • Induction heating
  • HVAC (Heating, Ventilation, and Air Conditioning)
  • Industrial applications and drives
  • Motor drivers – DC, AC, PMDC, and PMAC motors
  • Lighting applications
  • Factory automation
  • Power supply systems

Q & A

  1. What is the maximum high voltage rail for the L6384E?

    The L6384E can operate with a high voltage rail up to 600 V.

  2. What is the driver current capability of the L6384E?

    The L6384E can source 400 mA and sink 650 mA.

  3. How does the deadtime setting work on the L6384E?

    The deadtime can be set using an external resistor connected to the DT/SD pin, allowing a range of 0.4 to 3.1 μs.

  4. What type of logic inputs does the L6384E have?

    The L6384E has CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down.

  5. Does the L6384E have integrated protection features?

    Yes, it includes undervoltage lockout (UVLO) protection and a voltage clamp on the VCC supply voltage.

  6. What is the purpose of the integrated bootstrap diode in the L6384E?

    The integrated bootstrap diode replaces the external diode, reducing leakage losses and providing a more compact solution.

  7. What are the package options available for the L6384E?

    The L6384E is available in DIP-8 and SO-8 packages.

  8. What is the junction temperature range for the L6384E?

    The junction temperature range is -45 to 125 °C.

  9. What is the total power dissipation of the L6384E at 85 °C junction temperature?

    The total power dissipation is 750 mW at 85 °C junction temperature.

  10. What are some common applications for the L6384E?

    Common applications include home appliances, induction heating, HVAC, industrial drives, motor drivers, lighting applications, factory automation, and power supply systems.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Synchronous
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:14.6V ~ 16.6V
Logic Voltage - VIL, VIH:1.5V, 3.6V
Current - Peak Output (Source, Sink):400mA, 650mA
Input Type:Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):50ns, 30ns
Operating Temperature:-45°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Same Series
L6384ED013TR
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IC GATE DRVR HALF-BRIDGE 8SO
L6384E
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Similar Products

Part Number L6384ED013TR L6387ED013TR L6388ED013TR L6386ED013TR L6385ED013TR L6384D013TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Synchronous Independent Independent Independent Independent Synchronous
Number of Drivers 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 14.6V ~ 16.6V 17V (Max) 17V (Max) 17V (Max) 17V (Max) 14.6V ~ 16.6V
Logic Voltage - VIL, VIH 1.5V, 3.6V 1.5V, 3.6V 1.1V, 1.8V 1.5V, 3.6V 1.5V, 3.6V 1.5V, 3.6V
Current - Peak Output (Source, Sink) 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA 400mA, 650mA
Input Type Inverting Inverting Non-Inverting Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 50ns, 30ns 50ns, 30ns 70ns, 40ns 50ns, 30ns 50ns, 30ns 50ns, 30ns
Operating Temperature -45°C ~ 125°C (TJ) -45°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -45°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 14-SO 8-SOIC 8-SOIC

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