Overview
The NCP5304DR2G, produced by onsemi, is a high-voltage power gate driver designed to drive two N-channel power MOSFETs or IGBTs in a half-bridge configuration. This device is notable for its high voltage range, robust protection features, and compatibility with various power converter applications. It utilizes the bootstrap technique to ensure proper drive of the high-side power switch and includes cross conduction protection to prevent damage to the MOSFETs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| High Voltage Range | Up to 600 | V |
| dV/dt Immunity | ±50 | V/nsec |
| Gate Drive Supply Range | 10 to 20 | V |
| Output Source / Sink Current Capability | 250 mA / 500 mA | - |
| Input Logic Compatibility | 3.3 V and 5 V | - |
| Internal Fixed Dead Time | 65 to 100 ns | - |
| Maximum Operating Junction Temperature | +150 | °C |
| Package Type | SOIC-8 (Pb-Free) | - |
Key Features
- High voltage range up to 600 V and dV/dt immunity of ±50 V/nsec
- Bootstrap technique for high-side power switch drive
- Cross conduction protection with 100 ns internal fixed dead time
- Under VCC lockout (UVLO) for both channels
- Pin-to-pin compatibility with industry standards
- Extended allowable negative bridge pin voltage swing to -10 V for signal propagation
- Matched propagation delays between both channels
- Outputs in phase with the inputs
- Negative current injection characterized over the temperature range
Applications
- Half-bridge power converters
- Full-bridge converters
- Resonant converters (e.g., LLC type)
Q & A
- What is the maximum high voltage range of the NCP5304DR2G?
The NCP5304DR2G has a maximum high voltage range of up to 600 V.
- What is the dV/dt immunity of the NCP5304DR2G?
The dV/dt immunity is ±50 V/nsec.
- How does the NCP5304DR2G ensure proper drive of the high-side power switch?
The device uses the bootstrap technique to ensure proper drive of the high-side power switch.
- What is the internal fixed dead time for cross conduction protection?
The internal fixed dead time is between 65 to 100 ns.
- Is the NCP5304DR2G compatible with 3.3 V and 5 V input logic?
Yes, the device is compatible with both 3.3 V and 5 V input logic.
- What is the maximum operating junction temperature of the NCP5304DR2G?
The maximum operating junction temperature is +150 °C.
- What type of package is the NCP5304DR2G available in?
The device is available in an SOIC-8 (Pb-Free) package.
- What are some typical applications of the NCP5304DR2G?
Typical applications include half-bridge power converters, full-bridge converters, and resonant converters (e.g., LLC type).
- Does the NCP5304DR2G have under VCC lockout (UVLO) protection?
Yes, the device has under VCC lockout (UVLO) protection for both channels.
- How does the NCP5304DR2G protect against negative voltage on the bridge pin?
The device can handle negative voltage on the bridge pin, and using components like R1 and D1 can improve the robustness by limiting the negative voltage applied to the bridge pin.
