LM5111-1MX
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Texas Instruments LM5111-1MX

Manufacturer No:
LM5111-1MX
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The LM5111-1MX, produced by Texas Instruments, is a dual 5-A compound gate driver designed to drive two N-channel MOSFETs in various configurations such as half-bridge or synchronous buck converters. This device features two independent and identical driver channels with TTL compatible logic inputs and high current totem-pole outputs. The outputs are capable of sourcing or sinking current to drive MOSFET gates efficiently. The driver output consists of a compound structure with MOS and bipolar transistors operating in parallel, optimizing current capability over a wide output voltage and operating temperature range.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VCC Operating Range VCC - VEE 3.5 - 14 V
VCC Undervoltage Lockout (Rising) VCC - VEE 2.3 2.9 3.5 V
VCC Undervoltage Lockout Hysteresis - - 230 mV
VCC Supply Current (ICC) IN_A = IN_B = 0 V 1 2 mA
Output Current Capability Sink/Source 5 A / 3 A - - A
Propagation Time - - 25 ns ns
Rise and Fall Times - 14 ns / 12 ns - ns
Package - - SOIC, MSOP-PowerPAD -

Key Features

  • Independently drives two N-channel MOSFETs with TTL compatible logic inputs.
  • Compound CMOS and bipolar outputs to reduce output current variation.
  • 5-A sink and 3-A source current capability.
  • Two channels can be connected in parallel to double the drive current.
  • Fast propagation times (25 ns typical) and rise and fall times (14 ns and 12 ns respectively).
  • Undervoltage lockout (UVLO) circuit to prevent operation below a specified voltage threshold.
  • High impedance CMOS buffers with TTL compatible threshold voltages.
  • Designed for compatibility with industry standard gate drivers in single supply gate driver applications.

Applications

The LM5111-1MX is suitable for a variety of applications, including:

  • Half-bridge and synchronous buck converters.
  • Power supply systems requiring high current gate drive capabilities.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • DC-DC converters and other power management circuits.

Q & A

  1. What is the primary function of the LM5111-1MX?

    The LM5111-1MX is a dual gate driver designed to drive two N-channel MOSFETs in various configurations.

  2. What are the output current capabilities of the LM5111-1MX?

    The device can sink up to 5 A and source up to 3 A of current.

  3. What is the purpose of the undervoltage lockout (UVLO) feature?

    The UVLO feature disables the driver channels when the VCC to VEE voltage difference falls below a specified threshold, preventing operation during brown-out conditions.

  4. Can the two channels of the LM5111-1MX be connected in parallel?

    Yes, the two channels can be connected in parallel to double the drive current.

  5. What are the typical propagation and rise/fall times of the LM5111-1MX?

    The typical propagation time is 25 ns, and the rise and fall times are 14 ns and 12 ns respectively.

  6. What types of packages are available for the LM5111-1MX?

    The device is available in SOIC and MSOP-PowerPAD packages.

  7. What is the operating voltage range for the VCC supply of the LM5111-1MX?

    The VCC operating range is from 3.5 V to 14 V.

  8. How does the LM5111-1MX handle slow rising and falling input signals?

    Slow rising and falling input signals may cause the output to switch repeatedly at a high frequency, but this is not harmful to the driver.

  9. What are some common applications for the LM5111-1MX?

    Common applications include half-bridge and synchronous buck converters, power supply systems, motor control, and high-frequency switching applications.

  10. Are the driver channels of the LM5111-1MX identical?

    Yes, the two driver channels are designed as identical cells, ensuring nearly identical AC and DC performance.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:3.5V ~ 14V
Logic Voltage - VIL, VIH:0.8V, 2.2V
Current - Peak Output (Source, Sink):3A, 5A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):14ns, 12ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number LM5111-1MX LM5111-3MX LM5111-2MX LM5111-1MYX LM5111-1MY LM5110-1MX LM5111-1M
Manufacturer Texas Instruments Texas Instruments National Semiconductor Texas Instruments Texas Instruments Texas Instruments National Semiconductor
Product Status Obsolete Not For New Designs Obsolete Obsolete Obsolete Obsolete Active
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Independent Independent Independent Independent Independent Independent Independent
Number of Drivers 2 2 2 2 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V
Current - Peak Output (Source, Sink) 3A, 5A 3A, 5A 3A, 5A 3A, 5A 3A, 5A 3A, 5A 3A, 5A
Input Type Non-Inverting Inverting, Non-Inverting Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) - - - - - - -
Rise / Fall Time (Typ) 14ns, 12ns 14ns, 12ns 14ns, 12ns 14ns, 12ns 14ns, 12ns 14ns, 12ns 14ns, 12ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width) 8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-HVSSOP 8-HVSSOP 8-SOIC 8-SOIC

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