LM5110-1MX
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Texas Instruments LM5110-1MX

Manufacturer No:
LM5110-1MX
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The LM5110-1MX from Texas Instruments is a dual 5-A compound gate driver designed to replace industry standard gate drivers with improved peak output current and efficiency. This device features two independent and identical driver channels, each capable of driving N-channel MOSFETs. The LM5110 combines MOS and bipolar transistors in its output stages to optimize current capability over a wide output voltage and operating temperature range. It is available in SOIC-8 and WSON-10 packages, offering flexibility in design and application.

Key Specifications

SpecificationValue
Output Current Capability5A sink / 3A source
Propagation Times25 ns typical
Rise and Fall Times14 ns / 12 ns with 2 nF load
Supply Voltage Range3.5 V to 14 V
Operating Temperature Range-40°C to 125°C
Package TypesSOIC-8, WSON-10 (4 mm × 4 mm)
UVLO Threshold2.7 V to 2.9 V
Shutdown Current

Key Features

  • Independently drives two N-channel MOSFETs
  • Compound CMOS and bipolar outputs reduce output current variation
  • Two channels can be connected in parallel to double the drive current
  • Independent inputs (TTL compatible)
  • Dedicated input ground pin (IN_REF) for split supply or single supply operation
  • Outputs swing from VCC to VEE, which can be negative relative to input ground
  • Available in dual noninverting, dual inverting, and combination configurations
  • Shutdown input provides low power mode
  • Supply rail undervoltage lockout protection
  • Pin-out compatible with industry standard gate drivers

Applications

  • Synchronous rectifier gate drivers
  • Switch-mode power supply gate drivers
  • Solenoid and motor drivers

Q & A

  1. What is the output current capability of the LM5110?
    The LM5110 can sink up to 5A and source up to 3A of current.
  2. What are the typical propagation times for the LM5110?
    The typical propagation times are 25 ns.
  3. What are the rise and fall times of the LM5110 with a 2 nF load?
    The rise time is 14 ns and the fall time is 12 ns with a 2 nF load.
  4. What is the supply voltage range for the LM5110?
    The supply voltage range is from 3.5 V to 14 V.
  5. What are the available package types for the LM5110?
    The LM5110 is available in SOIC-8 and WSON-10 (4 mm × 4 mm) packages.
  6. What is the UVLO threshold for the LM5110?
    The UVLO threshold is between 2.7 V and 2.9 V.
  7. How much current does the LM5110 consume in shutdown mode?
    The LM5110 consumes less than 25 µA in shutdown mode.
  8. Can the LM5110 be used in parallel to increase drive current?
    Yes, the two channels can be connected in parallel to double the drive current.
  9. What is the purpose of the dedicated input ground pin (IN_REF)?
    The dedicated input ground pin allows for split supply or single supply operation.
  10. What kind of protection does the LM5110 offer?
    The LM5110 offers supply rail undervoltage lockout protection and a shutdown input for low power mode.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:3.5V ~ 14V
Logic Voltage - VIL, VIH:0.8V, 2.2V
Current - Peak Output (Source, Sink):3A, 5A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):14ns, 12ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number LM5110-1MX LM5111-1MX LM5110-2MX LM5110-3MX LM5110-1M
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Independent Independent Independent Independent Independent
Number of Drivers 2 2 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V
Current - Peak Output (Source, Sink) 3A, 5A 3A, 5A 3A, 5A 3A, 5A 3A, 5A
Input Type Non-Inverting Non-Inverting Inverting Inverting, Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) - - - - -
Rise / Fall Time (Typ) 14ns, 12ns 14ns, 12ns 14ns, 12ns 14ns, 12ns 14ns, 12ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC

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