LM5110-1M
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Texas Instruments LM5110-1M

Manufacturer No:
LM5110-1M
Manufacturer:
Texas Instruments
Package:
Tube
Description:
IC GATE DRVR LOW-SIDE 8SOIC
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Product Introduction

Overview

The LM5110-1M, produced by Texas Instruments, is a dual 5-A compound gate driver designed to replace industry standard gate drivers with improved peak output current and efficiency. This device features two independent and identical driver channels with TTL compatible logic inputs and high current totem-pole outputs. The outputs are capable of sourcing or sinking current to drive MOSFET gates, utilizing a compound structure of MOS and bipolar transistors to optimize current capability over a wide output voltage and operating temperature range.

Key Specifications

Parameter Value Unit
Peak Sink Current 5A A
Peak Source Current 3A A
Propagation Time 25 ns ns
Rise Time (with 2 nF Load) 14 ns ns
Fall Time (with 2 nF Load) 12 ns ns
Operating Temperature Range -40°C to 125°C °C
Supply Voltage Range 3.5 V to 14 V V
Package Type SOIC-8, WSON-10 (4 mm x 4 mm)

Key Features

  • Compound CMOS and bipolar outputs to reduce output current variation.
  • Independently drives two N-channel MOSFETs.
  • Fast propagation times (25 ns typical) and fast rise and fall times (14 ns/12 ns with 2 nF load).
  • Dedicated input ground pin (IN_REF) for split supply or single supply operation.
  • Outputs swing from VCC to VEE, which can be negative relative to input ground.
  • Shutdown input provides low power mode with total supply current less than 25 µA.
  • Supply rail undervoltage lockout protection.
  • Pin-out compatible with industry standard gate drivers.

Applications

  • Synchronous rectifier gate drivers.
  • Switch-mode power supply gate drivers.
  • Solenoid and motor drivers.

Q & A

  1. What is the peak sink current capability of the LM5110?

    The LM5110 can sink more than 5A peak from capacitive loads.

  2. What is the operating temperature range of the LM5110?

    The operating temperature range is -40°C to 125°C.

  3. What types of packages are available for the LM5110?

    The LM5110 is available in SOIC-8 and WSON-10 (4 mm x 4 mm) packages.

  4. What is the purpose of the IN_REF pin?

    The IN_REF pin is the dedicated input ground pin for split supply or single supply operation.

  5. Can the LM5110 drive MOSFET gates with negative VGS voltages?
  6. What is the function of the shutdown input (SHDN) pin?

    The SHDN pin enables or disables both driver channels, putting the device into a low power standby mode when in the logic low state.

  7. How do the MOS and bipolar transistors in the LM5110 work together?

    The MOS and bipolar transistors operate in parallel to optimize current capability over a wide output voltage and operating temperature range, reducing drive current variation.

  8. Can the two driver channels be connected in parallel?
  9. What is the purpose of the undervoltage lockout (UVLO) circuit?

    The UVLO circuit senses the voltage difference between VCC and VIN_REF, protecting the device from operating below the minimum required voltage.

  10. How should the ground paths be managed for the LM5110?

    The ground paths should be as short and wide as possible to reduce inductance and resistance, and should be kept distinctly separate to avoid coupling between high current output paths and logic signals.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:3.5V ~ 14V
Logic Voltage - VIL, VIH:0.8V, 2.2V
Current - Peak Output (Source, Sink):3A, 5A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):14ns, 12ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number LM5110-1M LM5111-1M LM5110-2M LM5110-3M LM5110-1MX
Manufacturer Texas Instruments National Semiconductor National Semiconductor Texas Instruments Texas Instruments
Product Status Obsolete Active Obsolete Obsolete Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Independent Independent Independent Independent Independent
Number of Drivers 2 2 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V 3.5V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.2V
Current - Peak Output (Source, Sink) 3A, 5A 3A, 5A 3A, 5A 3A, 5A 3A, 5A
Input Type Non-Inverting Non-Inverting Inverting Inverting, Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) - - - - -
Rise / Fall Time (Typ) 14ns, 12ns 14ns, 12ns 14ns, 12ns 14ns, 12ns 14ns, 12ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC

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