Overview
The LM5110-1MX/NOPB is a dual 5-A compound gate driver produced by Texas Instruments. This device is designed to independently drive two N-channel MOSFETs with high current totem-pole outputs. It features a compound structure of MOS and bipolar transistors operating in parallel, which optimizes current capability over a wide output voltage and operating temperature range. The LM5110 is available in dual non-inverting, dual inverting, and combination inverting plus non-inverting configurations, and it comes in SOIC-8 and thermally-enhanced WSON-10 packages.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Output Current Capability | 5A sink / 3A source | A |
Input Type | TTL Compatible | - |
Propagation Times | 25 ns (typical) | ns |
Rise and Fall Times | 14 ns / 12 ns (with 2 nF load) | ns |
Undervoltage Lockout (UVLO) | 4 V | V |
Shutdown Input | TTL Compatible, pull below 1.5V to activate | - |
Package Types | SOIC-8, WSON-10 | - |
Maximum VCC to VEE Voltage Difference | 14 V | V |
Minimum VCC to IN_REF Voltage Difference | 3.5 V | V |
Key Features
- Compound CMOS and bipolar outputs to reduce output current variation with voltage and temperature.
- Independent inputs with TTL compatible thresholds.
- Two channels can be connected in parallel to double the drive current capability.
- Separate input and output ground pins providing negative drive capability for driving MOSFET gates with positive and negative VGS voltages.
- Undervoltage lockout protection and a shutdown input pin for low power standby mode.
- Fast propagation times and rise/fall times to ensure efficient switching.
Applications
The LM5110-1MX/NOPB is suitable for various applications requiring high current gate driving, such as:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching applications.
- Systems requiring robust and reliable MOSFET gate driving with the option of negative VGS voltage.
Q & A
- What is the output current capability of the LM5110-1MX/NOPB?
The LM5110-1MX/NOPB can source 3A and sink 5A of current.
- What types of inputs does the LM5110-1MX/NOPB support?
The device supports TTL compatible logic inputs.
- Can the channels of the LM5110-1MX/NOPB be operated in parallel?
Yes, the two channels can be connected in parallel to double the drive current capability.
- What is the purpose of the separate input and output ground pins?
The separate input and output ground pins provide the capability to drive MOSFET gates with positive and negative VGS voltages.
- What is the undervoltage lockout (UVLO) voltage for the LM5110-1MX/NOPB?
The UVLO voltage is 4 V.
- How does the shutdown input pin function?
The shutdown input pin is TTL compatible and activates the low power standby mode when pulled below 1.5V.
- What are the available package types for the LM5110-1MX/NOPB?
The device is available in SOIC-8 and WSON-10 packages.
- What is the maximum recommended voltage difference between VCC and VEE?
The maximum recommended voltage difference is 14 V.
- What is the minimum voltage difference required between VCC and IN_REF?
The minimum voltage difference required is 3.5 V.
- How do the bipolar and MOS devices in the LM5110-1MX/NOPB work together?
The bipolar device provides high peak current at the critical threshold region of the MOSFET VGS, while the MOS devices provide rail-to-rail output swing, optimizing current capability over a wide output voltage and operating temperature range.