Overview
The MC33153DR2G, produced by onsemi, is a single IGBT gate driver designed for high-power applications. It is particularly suited for ac induction motor control, brushless DC motor control, and uninterruptable power supplies. This device is capable of driving discrete and module IGBTs, as well as power MOSFETs and bipolar transistors, offering a cost-effective solution with robust protection features.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Power Supply Voltage (VCC to VEE) | VCC - VEE | - | - | 20 | V |
| Logic Input Voltage | Vin | VEE - 0.3 | - | VCC | V |
| Gate Drive Output Source Current | IO | - | - | 1.0 | A |
| Gate Drive Output Sink Current | IO | - | - | 2.0 | A |
| Maximum Power Dissipation @ TA = 50°C (SO-8 Package) | PD | - | - | 0.56 | W |
| Thermal Resistance, Junction-to-Air (SO-8 Package) | RJA | - | - | 180 | °C/W |
| Propagation Delay (50% Input to 50% Output CL = 1.0 nF) | tPLH(in/out), tPHL(in/out) | 80 | 120 | 300 | ns |
Key Features
- High Current Output Stage: 1.0 A Source/2.0 A Sink
- Protection Circuits for Both Conventional and Sense IGBTs
- Programmable Fault Blanking Time
- Protection against Overcurrent and Short Circuit
- Undervoltage Lockout Optimized for IGBT’s
- Negative Gate Drive Capability
- Cost Effectively Drives Power MOSFETs and Bipolar Transistors
- Pb-Free and Halide-Free Device
Applications
The MC33153DR2G is designed for various high-power applications, including:
- AC induction motor control
- Brushless DC motor control
- Uninterruptable power supplies
Q & A
- What is the primary function of the MC33153DR2G?
The MC33153DR2G is a single IGBT gate driver designed for high-power applications such as ac induction motor control, brushless DC motor control, and uninterruptable power supplies. - What types of devices can the MC33153DR2G drive?
The MC33153DR2G can drive discrete and module IGBTs, as well as power MOSFETs and bipolar transistors. - What are the key protection features of the MC33153DR2G?
The device includes protection circuits for desaturation or overcurrent sensing and undervoltage detection. - What is the maximum power supply voltage for the MC33153DR2G?
The maximum power supply voltage (VCC to VEE) is 20 V. - What is the thermal resistance of the SO-8 package?
The thermal resistance, junction-to-air, for the SO-8 package is 180 °C/W. - Can the MC33153DR2G be used with optoisolators?
Yes, the MC33153DR2G can be used with optoisolators to provide level shifting and isolation from ac line voltages. - What is the purpose of the fault blanking time in the MC33153DR2G?
The fault blanking time allows the IGBT to clear the opposing free-wheeling diode and settle out any ringing on the collector due to COSS capacitance and parasitic wiring inductance. - What are the package options for the MC33153DR2G?
The device is available in dual-in-line (PDIP-8) and surface mount (SOIC-8) packages. - Is the MC33153DR2G Pb-Free and Halide-Free?
Yes, the MC33153DR2G is a Pb-Free and Halide-Free device. - What is the maximum gate drive output source and sink current?
The maximum gate drive output source current is 1.0 A, and the maximum sink current is 2.0 A.
