Overview
The MC33153DG, produced by onsemi, is a single IGBT gate driver designed for high power applications. It is particularly suited for use in ac induction motor control, brushless DC motor control, and uninterruptable power supplies. This device offers a cost-effective solution for driving not only discrete and module IGBTs but also power MOSFETs and bipolar transistors. The MC33153DG features advanced protection circuits, including desaturation or overcurrent sensing and undervoltage detection, making it a reliable choice for demanding power management tasks.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Power Supply Voltage (VCC to VEE) | VCC - VEE | - | - | 20 | V |
| Logic Input Voltage | Vin | VEE - 0.3 | - | VCC | V |
| Gate Drive Output Source Current | IO | - | - | 1.0 | A |
| Gate Drive Output Sink Current | IO | - | - | 2.0 | A |
| Output Voltage Low State (ISink = 1.0 A) | VOL | - | 2.0 | 2.5 | V |
| Output Voltage High State (ISource = 500 mA) | VOH | 12 | 13.9 | - | V |
| Propagation Delay (50% Input to 50% Output CL = 1.0 nF) | tPLH(in/out), tPHL(in/out) | 80 | 120 | 300 | ns |
| Operating Ambient Temperature Range | TA | -40 | - | 105 | °C |
Key Features
- High Current Output Stage: 1.0 A Source / 2.0 A Sink
- Protection Circuits for Both Conventional and Sense IGBTs
- Programmable Fault Blanking Time
- Protection against Overcurrent and Short Circuit
- Undervoltage Lockout Optimized for IGBTs
- Negative Gate Drive Capability
- Cost Effectively Drives Power MOSFETs and Bipolar Transistors
- Pb−Free and Halide−Free Device
Applications
The MC33153DG is designed for high power applications, including:
- AC Induction Motor Control
- Brushless DC Motor Control
- Uninterruptable Power Supplies
Q & A
- What is the primary function of the MC33153DG?
The MC33153DG is a single IGBT gate driver designed for high power applications such as ac induction motor control, brushless DC motor control, and uninterruptable power supplies. - What types of devices can the MC33153DG drive?
The MC33153DG can drive discrete and module IGBTs, as well as power MOSFETs and bipolar transistors. - What protection features does the MC33153DG offer?
The device includes protection circuits for desaturation or overcurrent sensing and undervoltage detection. - What is the maximum power supply voltage for the MC33153DG?
The maximum power supply voltage (VCC to VEE) is 20 V. - What are the output current capabilities of the MC33153DG?
The device can source up to 1.0 A and sink up to 2.0 A. - How does the programmable fault blanking time work?
The fault blanking time allows the device to ignore fault signals during the initial turn-on phase to account for the time it takes for the free-wheeling diode to clear and the ringing to settle out. - What are the operating temperature ranges for the MC33153DG?
The operating ambient temperature range is from -40°C to +105°C. - Can the MC33153DG be used with optoisolators?
Yes, the MC33153DG can be used with optoisolators to provide level shifting and isolation from ac line voltages. - What are the package options for the MC33153DG?
The device is available in dual-in-line (DIP-8) and surface mount (SOIC-8) packages. - Is the MC33153DG Pb-free and Halide-free?
Yes, the MC33153DG is a Pb-free and Halide-free device.
