MC33153P
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onsemi MC33153P

Manufacturer No:
MC33153P
Manufacturer:
onsemi
Package:
Tube
Description:
IC GATE DRVR LOW-SIDE 8DIP
Delivery:
Payment:
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Product Introduction

Overview

The MC33153 is a single IGBT gate driver designed by onsemi for high power applications. It is particularly suited for ac induction motor control, brushless dc motor control, and uninterruptable power supplies. Although primarily designed for driving discrete and module IGBTs, the MC33153 also offers a cost-effective solution for driving power MOSFETs and Bipolar Transistors. The device features various protection circuits, including desaturation or overcurrent sensing and undervoltage detection, making it a robust choice for demanding power management tasks.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Power Supply Voltage (VCC to VEE) VCC - VEE - - 20 V
Logic Input Voltage Vin VEE - 0.3 - VCC V
Gate Drive Output Source Current IO - - 1.0 A
Gate Drive Output Sink Current IO - - 2.0 A
Propagation Delay (50% Input to 50% Output) tPLH(in/out), tPHL(in/out) 80 120 300 ns
Operating Ambient Temperature Range Tlow, Thigh -40 - 105 °C
Maximum Power Dissipation @ TA = 50°C (SO-8 Package) PD - - 0.56 W
Thermal Resistance, Junction-to-Air (SO-8 Package) RθJA - - 180 °C/W

Key Features

  • High Current Output Stage: 1.0 A Source / 2.0 A Sink
  • Protection Circuits for Both Conventional and Sense IGBTs
  • Programmable Fault Blanking Time
  • Protection against Overcurrent and Short Circuit
  • Undervoltage Lockout Optimized for IGBTs
  • Negative Gate Drive Capability
  • Cost-Effective Solution for Driving Power MOSFETs and Bipolar Transistors
  • Pb-Free and Halide-Free Packages Available

Applications

The MC33153 is designed for various high power applications, including:

  • AC Induction Motor Control
  • Brushless DC Motor Control
  • Uninterruptable Power Supplies

Q & A

  1. What is the primary function of the MC33153?

    The MC33153 is a single IGBT gate driver designed for high power applications such as ac induction motor control, brushless dc motor control, and uninterruptable power supplies.

  2. What are the key protection features of the MC33153?

    The device includes protection circuits for desaturation or overcurrent sensing and undervoltage detection.

  3. What is the maximum power supply voltage for the MC33153?

    The maximum power supply voltage (VCC to VEE) is 20 V.

  4. What are the output current capabilities of the MC33153?

    The device can source up to 1.0 A and sink up to 2.0 A.

  5. Can the MC33153 drive power MOSFETs and Bipolar Transistors?
  6. What is the operating ambient temperature range for the MC33153?

    The operating ambient temperature range is from -40°C to +105°C.

  7. What packages are available for the MC33153?

    The device is available in dual-in-line (PDIP-8) and surface mount (SOIC-8) packages.

  8. Does the MC33153 support negative gate drive capability?
  9. How does the programmable fault blanking time work in the MC33153?

    The programmable fault blanking time allows the device to blank the fault signal during the turn-on period to account for the clearing of the opposing free-wheeling diode and settling of ringing on the collector.

  10. Is the MC33153 Pb-Free and Halide-Free?

Product Attributes

Driven Configuration:Low-Side
Channel Type:Single
Number of Drivers:1
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:11V ~ 20V
Logic Voltage - VIL, VIH:1.2V, 3.2V
Current - Peak Output (Source, Sink):1A, 2A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):17ns, 17ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:8-DIP (0.300", 7.62mm)
Supplier Device Package:8-PDIP
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MC33153P
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Similar Products

Part Number MC33153P MC33153PG MC33151P MC33152P MC33153D
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Single Single Independent Independent Single
Number of Drivers 1 1 2 2 1
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 11V ~ 20V 11V ~ 20V 6.5V ~ 18V 6.1V ~ 18V 11V ~ 20V
Logic Voltage - VIL, VIH 1.2V, 3.2V 1.2V, 3.2V 0.8V, 2.6V 0.8V, 2.6V 1.2V, 3.2V
Current - Peak Output (Source, Sink) 1A, 2A 1A, 2A 1.5A, 1.5A 1.5A, 1.5A 1A, 2A
Input Type Inverting Inverting Inverting Non-Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - - -
Rise / Fall Time (Typ) 17ns, 17ns 17ns, 17ns 31ns, 32ns 36ns, 32ns 17ns, 17ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount
Package / Case 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-PDIP 8-PDIP 8-PDIP 8-PDIP 8-SOIC

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