Overview
The NCP5109BDR2G is a high voltage gate driver IC produced by onsemi. This device is designed to drive two N-channel power MOSFETs or IGBTs, typically in a half-bridge configuration or other high-side and low-side configurations. It utilizes the bootstrap technique to ensure proper drive of the high-side power switch. The driver features independent inputs and is compatible with 3.3 V and 5 V input logic, making it versatile for various power conversion applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Main Power Supply Voltage (VCC) | −0.3 to 20 | V |
High Voltage BRIDGE Pin Voltage (VBRIDGE) | −1 to 200 | V |
Allowable Negative Bridge Pin Voltage for IN_LO Signal Propagation | −10 | V |
Output Source Current (IDRVsource) | −250 | mA |
Output Sink Current (IDRVsink) | −500 | mA |
Turn-on Propagation Delay (tON) | 100 to 170 | ns |
Turn-off Propagation Delay (tOFF) | 100 to 170 | ns |
Output Voltage Rise Time (tr) | 85 to 160 | ns |
Output Voltage Fall Time (tf) | 35 to 75 | ns |
Internal Fixed Dead Time (DT) | 65 to 100 | ns |
Maximum Operating Junction Temperature (TJ_max) | 150 | °C |
Storage Temperature Range (TST) | −55 to +150 | °C |
Key Features
- High voltage range up to 200 V
- dV/dt immunity of ±50 V/nsec
- Negative current injection characterized over the temperature range
- Gate drive supply range from 10 V to 20 V
- Output source/sink current capability of 250 mA / 500 mA
- 3.3 V and 5 V input logic compatible
- Extended allowable negative bridge pin voltage swing to −10 V for signal propagation
- Matched propagation delays between both channels
- Outputs in phase with the inputs
- Independent logic inputs to accommodate all topologies (Version A)
- Cross conduction protection with 100 ns internal fixed dead time (Version B)
- Under VCC lockout (UVLO) for both channels
- Pin-to-pin compatible with industry standards
- Pb-free devices
Applications
- Half-bridge power converters
- Any complementary drive converters (asymmetrical half-bridge, active clamp) (Version A only)
- Full-bridge converters
- Resonant converters (e.g., LLC type)
Q & A
- What is the maximum operating voltage for the NCP5109BDR2G?
The maximum operating voltage for the NCP5109BDR2G is up to 200 V.
- What is the output source/sink current capability of the NCP5109BDR2G?
The output source/sink current capability is 250 mA / 500 mA.
- Is the NCP5109BDR2G compatible with 3.3 V and 5 V input logic?
- What is the internal fixed dead time for Version B of the NCP5109BDR2G?
The internal fixed dead time for Version B is 65 to 100 ns.
- What are the typical applications for the NCP5109BDR2G?
Typical applications include half-bridge power converters, full-bridge converters, and resonant converters like LLC types.
- Does the NCP5109BDR2G have cross conduction protection?
- What is the maximum operating junction temperature for the NCP5109BDR2G?
The maximum operating junction temperature is 150°C.
- Is the NCP5109BDR2G Pb-free?
- What is the storage temperature range for the NCP5109BDR2G?
The storage temperature range is −55 to +150°C.
- Does the NCP5109BDR2G have under VCC lockout (UVLO) protection?