NCP5109BDR2G
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onsemi NCP5109BDR2G

Manufacturer No:
NCP5109BDR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The NCP5109BDR2G is a high voltage gate driver IC produced by onsemi. This device is designed to drive two N-channel power MOSFETs or IGBTs, typically in a half-bridge configuration or other high-side and low-side configurations. It utilizes the bootstrap technique to ensure proper drive of the high-side power switch. The driver features independent inputs and is compatible with 3.3 V and 5 V input logic, making it versatile for various power conversion applications.

Key Specifications

Parameter Value Unit
Main Power Supply Voltage (VCC) −0.3 to 20 V
High Voltage BRIDGE Pin Voltage (VBRIDGE) −1 to 200 V
Allowable Negative Bridge Pin Voltage for IN_LO Signal Propagation −10 V
Output Source Current (IDRVsource) −250 mA
Output Sink Current (IDRVsink) −500 mA
Turn-on Propagation Delay (tON) 100 to 170 ns
Turn-off Propagation Delay (tOFF) 100 to 170 ns
Output Voltage Rise Time (tr) 85 to 160 ns
Output Voltage Fall Time (tf) 35 to 75 ns
Internal Fixed Dead Time (DT) 65 to 100 ns
Maximum Operating Junction Temperature (TJ_max) 150 °C
Storage Temperature Range (TST) −55 to +150 °C

Key Features

  • High voltage range up to 200 V
  • dV/dt immunity of ±50 V/nsec
  • Negative current injection characterized over the temperature range
  • Gate drive supply range from 10 V to 20 V
  • Output source/sink current capability of 250 mA / 500 mA
  • 3.3 V and 5 V input logic compatible
  • Extended allowable negative bridge pin voltage swing to −10 V for signal propagation
  • Matched propagation delays between both channels
  • Outputs in phase with the inputs
  • Independent logic inputs to accommodate all topologies (Version A)
  • Cross conduction protection with 100 ns internal fixed dead time (Version B)
  • Under VCC lockout (UVLO) for both channels
  • Pin-to-pin compatible with industry standards
  • Pb-free devices

Applications

  • Half-bridge power converters
  • Any complementary drive converters (asymmetrical half-bridge, active clamp) (Version A only)
  • Full-bridge converters
  • Resonant converters (e.g., LLC type)

Q & A

  1. What is the maximum operating voltage for the NCP5109BDR2G?

    The maximum operating voltage for the NCP5109BDR2G is up to 200 V.

  2. What is the output source/sink current capability of the NCP5109BDR2G?

    The output source/sink current capability is 250 mA / 500 mA.

  3. Is the NCP5109BDR2G compatible with 3.3 V and 5 V input logic?
  4. What is the internal fixed dead time for Version B of the NCP5109BDR2G?

    The internal fixed dead time for Version B is 65 to 100 ns.

  5. What are the typical applications for the NCP5109BDR2G?

    Typical applications include half-bridge power converters, full-bridge converters, and resonant converters like LLC types.

  6. Does the NCP5109BDR2G have cross conduction protection?
  7. What is the maximum operating junction temperature for the NCP5109BDR2G?

    The maximum operating junction temperature is 150°C.

  8. Is the NCP5109BDR2G Pb-free?
  9. What is the storage temperature range for the NCP5109BDR2G?

    The storage temperature range is −55 to +150°C.

  10. Does the NCP5109BDR2G have under VCC lockout (UVLO) protection?

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.3V
Current - Peak Output (Source, Sink):250mA, 500mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):200 V
Rise / Fall Time (Typ):85ns, 35ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number NCP5109BDR2G NCP5106BDR2G NCP5109ADR2G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent
Number of Drivers 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.3V 0.8V, 2.3V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA 250mA, 500mA 250mA, 500mA
Input Type Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 200 V 600 V 200 V
Rise / Fall Time (Typ) 85ns, 35ns 85ns, 35ns 85ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC

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