NCP5109ADR2G
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onsemi NCP5109ADR2G

Manufacturer No:
NCP5109ADR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NCP5109ADR2G, produced by onsemi, is a high-voltage gate driver IC designed to drive two N-channel power MOSFETs or IGBTs. This device is available in two versions: A and B, each catering to different configuration needs. Version A supports any high-side and low-side configuration, while Version B is specifically designed for half-bridge configurations with integrated cross-conduction protection. The NCP5109ADR2G uses the bootstrap technique to ensure proper drive of the high-side power switch, making it suitable for various power conversion applications.

Key Specifications

Parameter Value Unit
Main Power Supply Voltage (VCC) −0.3 to 20 V
High Voltage BRIDGE Pin (VBRIDGE) −1 to 200 V
Allowable Negative Bridge Pin Voltage for IN_LO Signal Propagation −10 V
Gate Drive Supply Range 10 to 20 V
Output Source/Sink Current Capability 250 mA / 500 mA mA
Input Logic Compatibility 3.3 V and 5 V V
Turn-on Propagation Delay 100 to 170 ns
Turn-off Propagation Delay 100 to 170 ns
Output Voltage Rise Time 85 to 160 ns
Output Voltage Fall Time 35 to 75 ns
Internal Fixed Dead Time (Version B) 65 to 100 ns
Maximum Operating Junction Temperature 150 °C
Package Type SOIC-8, DFN-10

Key Features

  • High Voltage Range: Up to 200 V
  • dV/dt Immunity: ±50 V/nsec
  • Negative Current Injection Characterized Over the Temperature Range
  • Independent Logic Inputs to Accommodate All Topologies (Version A)
  • Cross Conduction Protection with 100 ns Internal Fixed Dead Time (Version B)
  • Under VCC LockOut (UVLO) for Both Channels
  • Pin-to-Pin Compatible with Industry Standards
  • Pb-Free Devices
  • Matched Propagation Delays Between Both Channels
  • Outputs in Phase with the Inputs

Applications

  • Half-Bridge Power Converters
  • Any Complementary Drive Converters (Asymmetrical Half-Bridge, Active Clamp) (Version A Only)
  • Full-Bridge Converters

Q & A

  1. What is the main purpose of the NCP5109ADR2G?

    The NCP5109ADR2G is a high-voltage gate driver IC designed to drive two N-channel power MOSFETs or IGBTs in various power conversion applications.

  2. What are the different versions of the NCP5109ADR2G?

    The device is available in two versions: Version A for any high-side and low-side configuration, and Version B specifically for half-bridge configurations with integrated cross-conduction protection.

  3. What is the voltage range for the main power supply (VCC)?

    The main power supply voltage (VCC) ranges from −0.3 to 20 V.

  4. What is the allowable negative bridge pin voltage for IN_LO signal propagation?

    The allowable negative bridge pin voltage for IN_LO signal propagation is −10 V.

  5. What are the output source and sink current capabilities?

    The output source current capability is 250 mA, and the output sink current capability is 500 mA.

  6. Is the NCP5109ADR2G compatible with 3.3 V and 5 V input logic?
  7. What is the turn-on and turn-off propagation delay?

    The turn-on and turn-off propagation delays are between 100 to 170 ns.

  8. Does the NCP5109ADR2G have built-in cross-conduction protection?

    Yes, Version B of the NCP5109ADR2G includes built-in cross-conduction protection with a 100 ns internal fixed dead time.

  9. What are the typical applications of the NCP5109ADR2G?

    The NCP5109ADR2G is typically used in half-bridge power converters, complementary drive converters (asymmetrical half-bridge, active clamp), and full-bridge converters.

  10. Is the NCP5109ADR2G Pb-free?

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.3V
Current - Peak Output (Source, Sink):250mA, 500mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):200 V
Rise / Fall Time (Typ):85ns, 35ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number NCP5109ADR2G NCP5109BDR2G NCP5106ADR2G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent
Number of Drivers 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.3V 0.8V, 2.3V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA 250mA, 500mA 250mA, 500mA
Input Type Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 200 V 200 V 600 V
Rise / Fall Time (Typ) 85ns, 35ns 85ns, 35ns 85ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC

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