NCP5104DR2G
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onsemi NCP5104DR2G

Manufacturer No:
NCP5104DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The NCP5104DR2G, produced by onsemi, is a high-voltage power gate driver designed to drive two N-channel power MOSFETs or IGBTs in a half-bridge configuration. This device utilizes the bootstrap technique to ensure proper drive of the high-side power switch. It is available in an SOIC-8 package and is Pb-free, halogen-free, and RoHS compliant. The NCP5104DR2G is suitable for various high-voltage applications, including half-bridge power converters and resonant converters.

Key Specifications

ParameterValueUnits
High Voltage RangeUp to 600V
dV/dt Immunity±50V/nsec
Gate Drive Supply Range10 to 20V
Output Source / Sink Current Capability250 mA / 500 mAmA
Input Logic Compatibility3.3 V and 5 VV
Internal Fixed Dead Time400 to 650ns
Turn-on Propagation Delay620 to 800ns
Turn-off Propagation Delay100 to 170ns
Output Voltage Rise Time85 to 160ns
Output Voltage Fall Time35 to 75ns
Propagation Delay Matching10 to 45ns

Key Features

  • High voltage range up to 600 V
  • dV/dt immunity of ±50 V/nsec
  • Gate drive supply range from 10 V to 20 V
  • High and low drive outputs with source/sink current capability of 250 mA / 500 mA
  • 3.3 V and 5 V input logic compatibility
  • Extended allowable negative bridge pin voltage swing to −10 V for signal propagation
  • Matched propagation delays between both channels
  • Internal fixed dead time of 520 ns
  • Under VCC lockout (UVLO) for both channels
  • Pin to pin compatible with industry standards
  • AEC-Q100 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements

Applications

  • Half-bridge power converters
  • Resonant converters (e.g., LLC type)

Q & A

  1. What is the maximum high voltage range of the NCP5104DR2G? The maximum high voltage range is up to 600 V.
  2. What is the dV/dt immunity of the NCP5104DR2G? The dV/dt immunity is ±50 V/nsec.
  3. What is the gate drive supply range for the NCP5104DR2G? The gate drive supply range is from 10 V to 20 V.
  4. What are the output source and sink current capabilities of the NCP5104DR2G? The output source current capability is 250 mA, and the output sink current capability is 500 mA.
  5. Is the NCP5104DR2G compatible with 3.3 V and 5 V input logic? Yes, it is compatible with both 3.3 V and 5 V input logic.
  6. What is the internal fixed dead time of the NCP5104DR2G? The internal fixed dead time is 520 ns.
  7. Does the NCP5104DR2G have under VCC lockout (UVLO) protection? Yes, it has UVLO protection for both channels.
  8. Is the NCP5104DR2G AEC-Q100 qualified? Yes, it is AEC-Q100 qualified and PPAP capable.
  9. What are the typical applications of the NCP5104DR2G? Typical applications include half-bridge power converters and resonant converters.
  10. Is the NCP5104DR2G Pb-free, halogen-free, and RoHS compliant? Yes, it is Pb-free, halogen-free, and RoHS compliant.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Synchronous
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.3V
Current - Peak Output (Source, Sink):250mA, 500mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):85ns, 35ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Same Series
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Similar Products

Part Number NCP5104DR2G NCP5304DR2G NCV5104DR2G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Synchronous Synchronous Synchronous
Number of Drivers 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.3V 0.8V, 2.3V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA 250mA, 500mA 250mA, 500mA
Input Type Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V
Rise / Fall Time (Typ) 85ns, 35ns 85ns, 35ns 85ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC

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