NCV5104DR2G
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onsemi NCV5104DR2G

Manufacturer No:
NCV5104DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The NCV5104DR2G is a high-voltage, half-bridge driver IC produced by onsemi. This component is designed to drive high-voltage power devices such as IGBTs and N-Channel MOSFETs. It features a high voltage range of up to 600 V and is known for its robust dV/dt immunity of ±50 V/nsec, making it suitable for demanding power management applications.

Key Specifications

ParameterValue
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Voltage - Supply10 V to 20 V
Logic Voltage - VIL, VIH0.8 V, 2.3 V
High Voltage RangeUp to 600 V
dV/dt Immunity±50 V/nsec

Key Features

  • High and low drive outputs for efficient control of power devices.
  • High dV/dt immunity to prevent false triggering.
  • Wide gate drive supply range from 10 V to 20 V.
  • Robust design suitable for high-voltage applications.
  • Compact package for space-efficient designs.

Applications

The NCV5104DR2G is ideal for various high-voltage applications including power supplies, motor drives, renewable energy systems, and industrial power management. Its high voltage range and robust immunity make it a reliable choice for systems requiring precise control over high-voltage power devices.

Q & A

  1. What is the maximum high voltage range of the NCV5104DR2G?
    The maximum high voltage range is up to 600 V.
  2. What types of power devices can the NCV5104DR2G drive?
    The NCV5104DR2G can drive IGBTs and N-Channel MOSFETs.
  3. What is the gate drive supply range of the NCV5104DR2G?
    The gate drive supply range is from 10 V to 20 V.
  4. What is the dV/dt immunity of the NCV5104DR2G?
    The dV/dt immunity is ±50 V/nsec.
  5. What are the logic voltage levels for the NCV5104DR2G?
    The logic voltage levels are VIL = 0.8 V and VIH = 2.3 V.
  6. Where can the NCV5104DR2G be used?
    The NCV5104DR2G can be used in power supplies, motor drives, renewable energy systems, and industrial power management.
  7. How many drivers are included in the NCV5104DR2G?
    The NCV5104DR2G includes 2 drivers.
  8. What is the significance of high dV/dt immunity in the NCV5104DR2G?
    High dV/dt immunity prevents false triggering and ensures reliable operation in noisy environments.
  9. Is the NCV5104DR2G available for purchase?
    Yes, the NCV5104DR2G is available for purchase from various electronics distributors such as Mouser and Digi-Key.
  10. What is the typical use case for the NCV5104DR2G in power management?
    The NCV5104DR2G is typically used to control high-voltage power devices in power management systems requiring precise and reliable operation.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Synchronous
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.3V
Current - Peak Output (Source, Sink):250mA, 500mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):85ns, 35ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Same Series
NCV5104DR2G
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Similar Products

Part Number NCV5104DR2G NCP5104DR2G
Manufacturer onsemi onsemi
Product Status Active Active
Driven Configuration Half-Bridge Half-Bridge
Channel Type Synchronous Synchronous
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.3V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA 250mA, 500mA
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V
Rise / Fall Time (Typ) 85ns, 35ns 85ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

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