Overview
The UCC27611DRVR, produced by Texas Instruments, is a single-channel, high-speed gate driver optimized for 5-V drive, specifically designed for enhancement mode Gallium Nitride FETs (eGANFETs). This device features a precisely controlled drive voltage VREF regulated to 5 V by an internal linear regulator. It offers asymmetrical rail-to-rail peak current drive capability with 4-A source and 6-A sink currents, making it suitable for high-frequency applications. The UCC27611DRVR is packaged in a small 2.00 mm × 2.00 mm SON-6 package with an exposed thermal and ground pad, enhancing its power-handling capability and reducing parasitic inductances.
Key Specifications
| Parameter | Value |
|---|---|
| Package | SON-6 (DRV) |
| Pins | 6 |
| Operating Temperature Range (°C) | -40 to 140 |
| Supply Voltage Range (V) | 4 to 18 |
| Drive Voltage VREF | Regulated to 5 V |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Propagation Delay (Typical) | 14 ns |
| Rise Time (Typical) | 9 ns |
| Fall Time (Typical) | 5 ns |
| Pullup and Pulldown Resistance (Max) | 1 Ω and 0.35 Ω |
| Input Compatibility | TTL and CMOS |
Key Features
- Enhancement Mode Gallium Nitride FETs (eGANFETs) support
- 4-V to 18-V single supply range
- Drive voltage VREF regulated to 5 V
- Asymmetrical rail-to-rail peak current drive capability (4-A source, 6-A sink)
- Split output configuration for individual turn-on and turn-off time optimization
- Fast propagation delays and rise/fall times
- TTL and CMOS compatible inputs
- Dual-input design offering drive flexibility (inverting and non-inverting configurations)
- Output held low when inputs are floating
- VDD under voltage lockout (UVLO)
- Optimized pinout compatible with eGANFET footprint
- Exposed thermal and ground pad in the package
Applications
The UCC27611DRVR is ideal for various high-frequency and high-power applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor drives and control systems
- Renewable energy systems
- High-efficiency power conversion systems
- Automotive and industrial power electronics
Q & A
- What is the primary application of the UCC27611DRVR?
The UCC27611DRVR is primarily used for driving enhancement mode Gallium Nitride FETs (eGANFETs) in high-frequency and high-power applications. - What is the package type and size of the UCC27611DRVR?
The UCC27611DRVR is packaged in a 2.00 mm × 2.00 mm SON-6 package. - What is the operating temperature range of the UCC27611DRVR?
The operating temperature range is from -40°C to 140°C. - What are the peak source and sink currents of the UCC27611DRVR?
The peak source current is 4 A, and the peak sink current is 6 A. - Is the UCC27611DRVR compatible with TTL and CMOS inputs?
Yes, the UCC27611DRVR is compatible with both TTL and CMOS inputs. - What is the typical propagation delay of the UCC27611DRVR?
The typical propagation delay is 14 ns. - Does the UCC27611DRVR have under voltage lockout (UVLO) protection?
Yes, the UCC27611DRVR has VDD under voltage lockout (UVLO) protection. - How does the split output configuration benefit the UCC27611DRVR?
The split output configuration allows for individual turn-on and turn-off time optimization depending on the FET. - What is the significance of the exposed thermal and ground pad in the package?
The exposed thermal and ground pad improves the package's power-handling capability and reduces parasitic inductances. - Can the UCC27611DRVR handle floating input conditions?
Yes, the internal input pullup and pulldown resistors hold the output LOW when the input pins are in a floating condition.
