Overview
The NCP81075DR2G, produced by onsemi, is a high-performance dual MOSFET gate driver designed to drive the gates of both high-side and low-side power MOSFETs in synchronous buck converter topologies. This device is optimized for high-frequency switching applications and features an on-chip bootstrap diode, eliminating the need for an external discrete diode. The NCP81075DR2G supports high floating top driver designs, accommodating boost voltages up to 180 V, and ensures independent control over the high-side and low-side drivers with precise delay matching.
Key Specifications
| Parameter | Min | Max | Units | |
|---|---|---|---|---|
| VDD Supply Voltage Range | 8.5 | 12 | 20 | V |
| VHB Voltage on HB | -0.3 | - | 200 | V |
| Switching Frequency | - | - | 1 MHz | - |
| Propagation Delay Times | - | - | 20 ns | - |
| Output Currents | - | - | 4 A (Sink), 4 A (Source) | - |
| Rise/Fall Times with 1000 pF Load | - | - | 8 ns / 7 ns | - |
| Operating Junction Temperature Range | -40 | - | 140 | °C |
| Package Options | - | - | SOIC-8, DFN8, WDFN10 | - |
Key Features
- Drives two N-channel MOSFETs in high-side and low-side configuration.
- Floating top driver accommodates boost voltage up to 180 V.
- Independent Under-Voltage Lockout (UVLO) protection for high-side and low-side drivers.
- High-speed switching capability with propagation delay times of 20 ns.
- Output currents of 4 A (sink) and 4 A (source).
- Rise and fall times of 8 ns and 7 ns respectively with a 1000 pF load.
- TTL-compatible input stage.
- Operating temperature range from -40°C to 140°C.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- Telecom and Datacom systems.
- Isolated and non-isolated power supply architectures.
- Class D audio amplifiers.
- Two-switch and active clamp forward converters.
Q & A
- What is the primary function of the NCP81075DR2G?
The NCP81075DR2G is a dual MOSFET gate driver designed to drive the gates of both high-side and low-side power MOSFETs in synchronous buck converter topologies.
- What is the maximum boost voltage the NCP81075DR2G can accommodate?
The NCP81075DR2G can accommodate boost voltages up to 180 V.
- What is the switching frequency capability of the NCP81075DR2G?
The NCP81075DR2G can operate at switching frequencies up to 1 MHz.
- What are the propagation delay times of the NCP81075DR2G?
The propagation delay times are up to 20 ns.
- What are the output current capabilities of the NCP81075DR2G?
The device can source and sink up to 4 A of current.
- What is the operating temperature range of the NCP81075DR2G?
The operating temperature range is from -40°C to 140°C.
- Does the NCP81075DR2G have Under-Voltage Lockout (UVLO) protection?
Yes, the NCP81075DR2G has UVLO protection for both high-side and low-side drivers.
- What are the package options available for the NCP81075DR2G?
The device is available in SOIC-8, DFN8, and WDFN10 packages.
- Is the NCP81075DR2G RoHS compliant?
Yes, the NCP81075DR2G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are some typical applications of the NCP81075DR2G?
Typical applications include telecom and datacom systems, isolated and non-isolated power supply architectures, Class D audio amplifiers, and two-switch and active clamp forward converters.
