LMG1205YFXT
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Texas Instruments LMG1205YFXT

Manufacturer No:
LMG1205YFXT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 12DSBGA
Delivery:
Payment:
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Product Introduction

Overview

The LMG1205YFXT is a high-performance, half-bridge gate driver IC designed by Texas Instruments to drive both high-side and low-side enhancement mode Gallium Nitride (GaN) FETs. This device is optimized for use in synchronous buck, boost, or half-bridge configurations. It features an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs, providing maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V to prevent the gate voltage from exceeding the maximum gate-source voltage rating of the GaN FETs. The inputs are TTL logic compatible and can handle input voltages up to 14 V regardless of the VDD voltage. The LMG1205YFXT is available in a compact 12-pin DSBGA package, which minimizes package inductance and enhances overall efficiency and effectiveness.

Key Specifications

Parameter Value Parameter Value
Package DSBGA (12-pin) Operating Temperature Range (°C) -40 to 125
Input VCC (min) (V) 4.5 Input VCC (max) (V) 5.5
Peak Output Current (A) 5 Undervoltage Lockout (typ) (V) 4
Propagation Delay Time (µs) 0.035 Rise Time (ns) 7
Fall Time (ns) 3.5 Iq (mA) 0.09
Input Threshold TTL Channel Input Logic TTL
Negative Voltage Handling at HS Pin (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side

Key Features

  • Independent high-side and low-side TTL logic inputs
  • 1.2-A peak source, 5-A sink current
  • High-side floating bias voltage rail operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable turn-on, turn-off strength
  • 0.6-Ω pulldown, 2.1-Ω pullup resistance
  • Fast propagation times (35 ns typical)
  • Excellent propagation delay matching (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption
  • Strong sink capability to maintain the gate in the low state during switching

Applications

  • Current-fed push-pull converters
  • Half and full-bridge converters
  • Synchronous buck converters
  • Two-switch forward converters
  • Forward with active clamp converters
  • Automotive and industrial applications for controlling power distribution to various loads
  • High-frequency, high-efficiency power conversion applications such as DC-DC converters and motor drives

Q & A

  1. What is the LMG1205YFXT used for?

    The LMG1205YFXT is used to drive high-side and low-side enhancement mode Gallium Nitride (GaN) FETs in synchronous buck, boost, or half-bridge configurations.

  2. What is the package type of the LMG1205YFXT?

    The LMG1205YFXT is available in a 12-pin DSBGA package.

  3. What are the key features of the LMG1205YFXT?

    Key features include independent high-side and low-side TTL logic inputs, 1.2-A peak source and 5-A sink current, internal bootstrap supply voltage clamping, and split outputs for adjustable turn-on and turn-off strength.

  4. What is the operating temperature range of the LMG1205YFXT?

    The operating temperature range is -40°C to 125°C.

  5. What is the propagation delay time of the LMG1205YFXT?

    The propagation delay time is typically 35 ns.

  6. Does the LMG1205YFXT have undervoltage lockout protection?

    Yes, the LMG1205YFXT has supply rail undervoltage lockout protection.

  7. What are the typical applications of the LMG1205YFXT?

    Typical applications include current-fed push-pull converters, half and full-bridge converters, synchronous buck converters, and automotive and industrial power distribution systems.

  8. How does the LMG1205YFXT handle input voltages?

    The inputs are TTL logic compatible and can handle input voltages up to 14 V regardless of the VDD voltage.

  9. What is the purpose of the internal bootstrap supply voltage clamping in the LMG1205YFXT?

    The internal bootstrap supply voltage clamping prevents the gate voltage from exceeding the maximum gate-source voltage rating of the GaN FETs.

  10. Does the LMG1205YFXT support high-frequency operations?

    Yes, the LMG1205YFXT can operate up to several MHz.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:4.5V ~ 5.5V
Logic Voltage - VIL, VIH:1.76V, 1.89V
Current - Peak Output (Source, Sink):1.2A, 5A
Input Type:TTL
High Side Voltage - Max (Bootstrap):100 V
Rise / Fall Time (Typ):7ns, 3.5ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:12-WFBGA, DSBGA
Supplier Device Package:12-DSBGA
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Similar Products

Part Number LMG1205YFXT LMG1205YFXR
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
Driven Configuration Half-Bridge Half-Bridge
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 4.5V ~ 5.5V 4.5V ~ 5.5V
Logic Voltage - VIL, VIH 1.76V, 1.89V -
Current - Peak Output (Source, Sink) 1.2A, 5A 1.2A, 5A
Input Type TTL TTL
High Side Voltage - Max (Bootstrap) 100 V 100 V
Rise / Fall Time (Typ) 7ns, 3.5ns 7ns, 3.5ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 12-WFBGA, DSBGA 12-WFBGA, DSBGA
Supplier Device Package 12-DSBGA 12-DSBGA

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