NCP5106ADR2G
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onsemi NCP5106ADR2G

Manufacturer No:
NCP5106ADR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NCP5106ADR2G is a high-voltage gate driver IC produced by onsemi, designed to drive two N-channel power MOSFETs or IGBTs in various configurations. This device is particularly suited for applications requiring high and low side drive outputs, such as half-bridge, full-bridge, and other complementary drive converters. The NCP5106ADR2G features a robust design with integrated bootstrap functionality, ensuring proper drive of the high-side power switch. It operates over a wide temperature range and is compatible with 3.3V and 5V input logic.

Key Specifications

Parameter Description Value
Package SOIC-8 -
Number of Channels 2 -
Output Current Source/Sink 250 mA / 500 mA
Gate Drive Supply Range VCC 10 V to 20 V
Input Logic Compatibility - 3.3 V and 5 V
Propagation Delay Time tON, tOFF 100 ns to 170 ns
Rise Time tr 85 ns to 160 ns
Fall Time tf 35 ns to 75 ns
Operating Temperature Range -40°C to 125°C -
Voltage Class VHV Up to 600 V
Protection Features - Under Voltage Lockout (UVLO), Cross Conduction Protection
Mounting - Surface Mount (SMD)

Key Features

  • High voltage range up to 600 V
  • dV/dt immunity ±50 V/nsec
  • Integrated bootstrap functionality for high-side drive
  • Independent logic inputs for all topologies
  • Cross conduction protection with 100 ns internal fixed dead time (Version B)
  • Under voltage lockout (UVLO) for both channels
  • Pin-to-pin compatible with industry standards
  • Pb-free device
  • 3.3 V and 5 V input logic compatibility
  • Extended allowable negative bridge pin voltage swing to −10 V for signal propagation

Applications

  • Half-bridge power converters
  • Full-bridge power converters
  • Any complementary drive converters (asymmetrical half-bridge, active clamp)

Q & A

  1. What is the primary function of the NCP5106ADR2G?

    The NCP5106ADR2G is a high-voltage gate driver IC designed to drive two N-channel power MOSFETs or IGBTs in various configurations.

  2. What is the operating temperature range of the NCP5106ADR2G?

    The operating temperature range is from -40°C to 125°C.

  3. What is the gate drive supply voltage range for the NCP5106ADR2G?

    The gate drive supply voltage range is from 10 V to 20 V.

  4. Does the NCP5106ADR2G support 3.3 V and 5 V input logic?
  5. What protection features does the NCP5106ADR2G include?

    The device includes under voltage lockout (UVLO) and cross conduction protection.

  6. What is the maximum output current capability of the NCP5106ADR2G?

    The output source/sink current capability is 250 mA / 500 mA.

  7. What is the typical rise and fall time of the NCP5106ADR2G?

    The rise time (tr) is 85 ns to 160 ns, and the fall time (tf) is 35 ns to 75 ns.

  8. Is the NCP5106ADR2G Pb-free?
  9. What are the typical applications of the NCP5106ADR2G?

    Typical applications include half-bridge power converters, full-bridge power converters, and other complementary drive converters.

  10. What is the voltage class of the NCP5106ADR2G?

    The voltage class is up to 600 V.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.3V
Current - Peak Output (Source, Sink):250mA, 500mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):85ns, 35ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number NCP5106ADR2G NCP5106BDR2G NCP5109ADR2G NCV5106ADR2G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Synchronous
Number of Drivers 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.3V 0.8V, 2.3V 0.8V, 2.3V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA 250mA, 500mA 250mA, 500mA 250mA, 500mA
Input Type Non-Inverting Non-Inverting Non-Inverting Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 200 V 600 V
Rise / Fall Time (Typ) 85ns, 35ns 85ns, 35ns 85ns, 35ns 85ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC

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