NCP5106BMNTWG
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onsemi NCP5106BMNTWG

Manufacturer No:
NCP5106BMNTWG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 10DFN
Delivery:
Payment:
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Product Introduction

Overview

The NCP5106BMNTWG is a high voltage gate driver IC produced by onsemi. This device is designed to provide two outputs for the direct drive of two N-channel power MOSFETs or IGBTs, typically arranged in a half-bridge configuration or other high-side and low-side configurations. The NCP5106 utilizes the bootstrap technique to ensure proper drive of the high-side power switch and features independent logic inputs to accommodate various topologies.

Key Specifications

Parameter Symbol Value Unit
Main power supply voltage VCC −0.3 to 20 V
High Voltage BRIDGE pin VBRIDGE −1 to 600 V
Allowable Negative Bridge Pin Voltage for IN_LO Signal Propagation to DRV_LO VBRIDGE −10 V
Gate Drive Supply Range VCC 10 to 20 V
Output Source / Sink Current Capability IDRVsource / IDRVsink 250 mA / 500 mA mA
Input Logic Compatibility VIN_XX 3.3 V and 5 V V
Turn-on Propagation Delay tON 100 to 170 ns ns
Turn-off Propagation Delay tOFF 100 to 170 ns ns
Internal Fixed Dead Time (Version B) DT 65 to 100 ns ns
Maximum Operating Junction Temperature TJ_max 150°C °C

Key Features

  • High Voltage Range: Up to 600 V
  • dV/dt Immunity: ±50 V/nsec
  • Negative Current Injection Characterized Over the Temperature Range
  • High and Low Drive Outputs
  • Output Source / Sink Current Capability: 250 mA / 500 mA
  • 3.3 V and 5 V Input Logic Compatible
  • Extended Allowable Negative Bridge Pin Voltage Swing to −10 V for Signal Propagation
  • Matched Propagation Delays Between Both Channels
  • Outputs in Phase with the Inputs
  • Independent Logic Inputs to Accommodate All Topologies (Version A)
  • Cross Conduction Protection with 100 ns Internal Fixed Dead Time (Version B)
  • Under VCC LockOut (UVLO) for Both Channels
  • Pin-to-Pin Compatible with Industry Standards
  • Pb-Free Devices

Applications

  • Half-Bridge Power Converters
  • Any Complementary Drive Converters (Asymmetrical Half-Bridge, Active Clamp) (A Version Only)
  • Full-Bridge Converters

Q & A

  1. What is the maximum voltage range for the NCP5106BMNTWG?

    The NCP5106BMNTWG has a maximum voltage range of up to 600 V for the high voltage BRIDGE pin.

  2. What is the gate drive supply range for this device?

    The gate drive supply range is from 10 V to 20 V.

  3. What are the output source and sink current capabilities?

    The output source current capability is 250 mA, and the output sink current capability is 500 mA.

  4. Is the NCP5106BMNTWG compatible with 3.3 V and 5 V input logic?
  5. What is the internal fixed dead time for Version B?

    The internal fixed dead time for Version B is between 65 ns to 100 ns.

  6. What are the typical applications for the NCP5106BMNTWG?

    Typical applications include half-bridge power converters, complementary drive converters, and full-bridge converters.

  7. Does the NCP5106BMNTWG have cross conduction protection?
  8. Is the NCP5106BMNTWG Pb-free?
  9. What is the maximum operating junction temperature for this device?

    The maximum operating junction temperature is 150°C.

  10. Does the NCP5106BMNTWG support negative voltage on the bridge pin?

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.3V
Current - Peak Output (Source, Sink):250mA, 500mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):85ns, 35ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:10-VDFN Exposed Pad
Supplier Device Package:10-DFN (4x4)
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Similar Products

Part Number NCP5106BMNTWG NCP5109BMNTWG NCP5106AMNTWG
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent
Number of Drivers 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.3V 0.8V, 2.3V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA 250mA, 500mA 250mA, 500mA
Input Type Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 200 V 600 V
Rise / Fall Time (Typ) 85ns, 35ns 85ns, 35ns 85ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 10-VDFN Exposed Pad 10-VFDFN Exposed Pad 10-VDFN Exposed Pad
Supplier Device Package 10-DFN (4x4) 10-DFN (3x3) 10-DFN (4x4)

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