MJD3055T4G
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onsemi MJD3055T4G

Manufacturer No:
MJD3055T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 10A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The MJD3055T4G is a Complementary Power Transistor manufactured by onsemi. It is designed for surface mount applications and is available in a TO-252-3 (DPAK) package. This transistor is part of the MJD3055 series and is known for its high current gain and bandwidth product, making it suitable for various power and amplification needs.

Key Specifications

AttributeValue
PolarityNPN
TypePower Transistor
Collector-Emitter Voltage (Max)60 V
Collector Current (Max)10 A
Power Dissipation (Total)1.75 W
DC Current Gain (Min)20
Package StyleTO-252-3 (DPAK)
Mounting MethodSurface Mount
Gain Bandwidth Product (fT)2.0 MHz @ IC = 500 mA
Emitter-Base Voltage (VEBO)5 V
Collector-Emitter Saturation Voltage1.1 V

Key Features

  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves (“−1” Suffix)
  • Electrically Similar to MJE2955 and MJE3055
  • DC Current Gain Specified to 10 Amperes
  • High Current Gain−Bandwidth Product: fT = 2.0 MHz (Min) @ IC = 500 mA
  • ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • Pb−Free Packages

Applications

  • General purpose Amplifiers
  • Low speed switching applications

Q & A

  1. What is the polarity of the MJD3055T4G transistor?
    The MJD3055T4G is an NPN transistor.
  2. What is the maximum collector current of the MJD3055T4G?
    The maximum collector current is 10 A.
  3. What is the package style of the MJD3055T4G?
    The package style is TO-252-3 (DPAK).
  4. What is the mounting method for the MJD3055T4G?
    The mounting method is Surface Mount.
  5. What is the gain bandwidth product (fT) of the MJD3055T4G?
    The gain bandwidth product (fT) is 2.0 MHz @ IC = 500 mA.
  6. Is the MJD3055T4G ESD rated?
    Yes, it has ESD ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.
  7. Is the MJD3055T4G suitable for automotive applications?
    Yes, it is AEC−Q101 Qualified and PPAP Capable.
  8. What are the typical applications of the MJD3055T4G?
    General purpose Amplifiers and low speed switching applications.
  9. Is the MJD3055T4G Pb−Free?
    Yes, it is Pb−Free.
  10. What is the maximum collector-emitter voltage of the MJD3055T4G?
    The maximum collector-emitter voltage is 60 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:2MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD3055T4G MJD3055T4
Manufacturer onsemi STMicroelectronics
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V 20 @ 4A, 4V
Power - Max 1.75 W 20 W
Frequency - Transition 2MHz 2MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK

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