Overview
The NJVMJD3055T4G is an NPN bipolar power transistor produced by onsemi. This device is part of the MJD3055 series, which is designed for general purpose amplifier and low speed switching applications. The NJVMJD3055T4G is a complementary device to the PNP MJD2955, offering high performance and reliability in various electronic systems.
The transistor is available in a DPAK package, which is lead-formed for surface mount applications and is Pb-free and RoHS compliant. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | 60 | Vdc |
| Collector-Base Voltage | VCB | - | 70 | Vdc |
| Emitter-Base Voltage | VEB | - | 5 | Vdc |
| Collector Current | IC | - | 10 | Adc |
| Base Current | IB | - | 6 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | - | 20 | W |
| Total Power Dissipation @ TA = 25°C | PD | - | 1.75 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | 150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | - | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 71.4 | °C/W |
| DC Current Gain (IC = 10 Adc, VCE = 4 Vdc) | hFE | 20 | 100 | - |
| Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 3.3 Adc) | VCE(sat) | - | 1.1 | Vdc |
| Base-Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) | VBE(on) | - | 1.8 | Vdc |
| Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) | fT | 2 | - | MHz |
Key Features
- Lead formed for surface mount applications in plastic sleeves (No Suffix) and straight lead version in plastic sleeves (“−1” Suffix)
- Electrically similar to MJE2955 and MJE3055
- High current gain-bandwidth product (fT = 2 MHz @ IC = 500 mAdc)
- Pb-free and RoHS compliant packages
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- High DC current gain specified to 10 amperes
- Low VCE(sat) for efficient operation
Applications
- General purpose amplifier applications
- Low speed switching applications
- Automotive systems due to AEC-Q101 qualification and PPAP capability
- Industrial control systems requiring high reliability and performance
- Power management and power supply systems
Q & A
- What is the maximum collector-emitter voltage for the NJVMJD3055T4G?
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
- What is the maximum collector current for this transistor?
The maximum collector current (IC) is 10 Adc.
- Is the NJVMJD3055T4G Pb-free and RoHS compliant?
Yes, the NJVMJD3055T4G is Pb-free and RoHS compliant.
- What is the thermal resistance, junction-to-case (RJC) for this transistor?
The thermal resistance, junction-to-case (RJC) is 6.25 °C/W.
- What is the current-gain - bandwidth product (fT) for the NJVMJD3055T4G?
The current-gain - bandwidth product (fT) is 2 MHz @ IC = 500 mAdc.
- What are the typical applications for the NJVMJD3055T4G?
Typical applications include general purpose amplifier and low speed switching applications, as well as automotive and industrial control systems.
- Is the NJVMJD3055T4G AEC-Q101 qualified?
Yes, the NJVMJD3055T4G is AEC-Q101 qualified and PPAP capable.
- What is the maximum operating junction temperature for this transistor?
The maximum operating junction temperature is 150 °C.
- What is the base-emitter on voltage (VBE(on)) for the NJVMJD3055T4G?
The base-emitter on voltage (VBE(on)) is up to 1.8 Vdc.
- What package types are available for the NJVMJD3055T4G?
The transistor is available in DPAK packages, including lead-formed and straight lead versions, and also in tape and reel configurations.
