Overview
The NJVMJD2955T4G is a PNP complementary power transistor manufactured by ON Semiconductor. It is designed for general-purpose amplifier and low-speed switching applications. This transistor is part of the MJD2955 and MJD3055 series, which are electrically similar to the MJE2955 and MJE3055 models. The NJVMJD2955T4G is packaged in a DPAK (TO-252) case, making it suitable for surface mount applications. It is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Rating | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | Vdc |
| Collector-Base Voltage | VCB | 70 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current | IC | 10 | Adc |
| Base Current | IB | 6 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 20 | W |
| Total Power Dissipation @ TA = 25°C | PD | 1.75 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 71.4 | °C/W |
| ESD Ratings - Human Body Model | HBM | 3B > 8000 V | V |
| ESD Ratings - Machine Model | MM | C > 400 V | V |
Key Features
- Lead formed for surface mount applications in plastic sleeves.
- Straight lead version available in plastic sleeves with a '-1' suffix.
- Electrically similar to MJE2955 and MJE3055.
- High current gain-bandwidth product (fT = 2.0 MHz @ IC = 500 mAdc).
- Epoxy meets UL 94 V-0 @ 0.125 in.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free and RoHS compliant packages.
Applications
The NJVMJD2955T4G is suitable for a variety of applications, including:
- General-purpose amplifiers.
- Low-speed switching applications.
- Automotive systems requiring high reliability and specific control change requirements.
- Industrial control systems.
- Power management circuits.
Q & A
- What is the maximum collector-emitter voltage of the NJVMJD2955T4G?
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
- What is the maximum collector current of the NJVMJD2955T4G?
The maximum collector current (IC) is 10 Adc.
- What is the thermal resistance, junction-to-ambient, of the NJVMJD2955T4G?
The thermal resistance, junction-to-ambient (RθJA), is 71.4 °C/W.
- Is the NJVMJD2955T4G RoHS compliant?
- What are the operating and storage junction temperature ranges for the NJVMJD2955T4G?
The operating and storage junction temperature range is -55 to +150 °C.
- What is the ESD rating for the Human Body Model (HBM) of the NJVMJD2955T4G?
The ESD rating for the Human Body Model (HBM) is 3B > 8000 V.
- What is the package type of the NJVMJD2955T4G?
The package type is DPAK (TO-252).
- Is the NJVMJD2955T4G AEC-Q101 qualified?
- What are the typical applications for the NJVMJD2955T4G?
The typical applications include general-purpose amplifiers, low-speed switching applications, and automotive systems.
- What is the bandwidth product (fT) of the NJVMJD2955T4G?
The bandwidth product (fT) is 2.0 MHz @ IC = 500 mAdc.
