Overview
The MJE5852G is a high-voltage, high-speed PNP silicon power transistor produced by onsemi. This transistor is part of the MJE5850 series, designed for power switching in inductive circuits where fast turn-off times are critical. It is particularly suited for line-operated switch-mode applications and is RoHS compliant and Pb-free.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | VCEO(sus) | 400 | Vdc |
| Collector-Emitter Voltage (VCEV) | VCEV | 450 | Vdc |
| Emitter-Base Voltage (VEB) | VEB | 6.0 | Vdc |
| Collector Current - Continuous (IC) | IC | 8.0 | A |
| Collector Current - Peak (ICM) | ICM | 16 | A |
| Base Current - Continuous (IB) | IB | 4.0 | A |
| Base Current - Peak (IBM) | IBM | 8.0 | A |
| Total Power Dissipation @ TC = 25°C | PD | 80 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to 150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 1.25 | °C/W |
Key Features
- High-voltage, high-speed power switching capabilities.
- Suitable for inductive circuits where fast turn-off times are critical.
- Particularly suited for line-operated switch-mode applications.
- Fast turn-off times.
- Operating temperature range of -65 to +150°C.
- Pb-free and RoHS compliant.
- Complementary to the MJE13007 series.
Applications
- Switching regulators.
- Inverters.
- Solenoid and relay drivers.
- Motor controls.
- Deflection circuits.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the MJE5852G transistor?
The maximum collector-emitter voltage (VCEO) of the MJE5852G transistor is 400 Vdc.
- What is the continuous collector current (IC) rating of the MJE5852G transistor?
The continuous collector current (IC) rating of the MJE5852G transistor is 8.0 A.
- What is the operating temperature range of the MJE5852G transistor?
The operating temperature range of the MJE5852G transistor is -65 to +150°C.
- Is the MJE5852G transistor Pb-free and RoHS compliant?
Yes, the MJE5852G transistor is Pb-free and RoHS compliant.
- What are some typical applications of the MJE5852G transistor?
The MJE5852G transistor is typically used in switching regulators, inverters, solenoid and relay drivers, motor controls, and deflection circuits.
- What is the thermal resistance, junction-to-case (RJC) of the MJE5852G transistor?
The thermal resistance, junction-to-case (RJC) of the MJE5852G transistor is 1.25 °C/W.
- What is the total power dissipation rating of the MJE5852G transistor at TC = 25°C?
The total power dissipation rating of the MJE5852G transistor at TC = 25°C is 80 W.
- What is the emitter-base voltage (VEB) rating of the MJE5852G transistor?
The emitter-base voltage (VEB) rating of the MJE5852G transistor is 6.0 Vdc.
- What is the peak collector current (ICM) rating of the MJE5852G transistor?
The peak collector current (ICM) rating of the MJE5852G transistor is 16 A.
- What is the base current - continuous (IB) rating of the MJE5852G transistor?
The base current - continuous (IB) rating of the MJE5852G transistor is 4.0 A.
