FFSH3065A
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onsemi FFSH3065A

Manufacturer No:
FFSH3065A
Manufacturer:
onsemi
Package:
Tube
Description:
650V 30A SIC SBD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSH3065A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This component utilizes advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon diodes. The FFSH3065A is designed for high-power applications, providing efficient and reliable operation in demanding environments.

Key Specifications

ParameterValue
Voltage Rating (VDRM)650 V
Current Rating (IF)30 A
Forward Voltage Drop (VF)1.5 V @ 16 A
Package TypeTO-247-2
Number of Pins2
RoHS ComplianceYes

Key Features

  • High voltage rating of 650 V and current rating of 30 A, making it suitable for high-power applications.
  • Low forward voltage drop of 1.5 V at 16 A, enhancing efficiency and reducing power losses.
  • TO-247-2 package for robust and reliable mounting.
  • SiC technology provides superior switching performance and higher reliability compared to silicon diodes.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The FFSH3065A SiC Schottky Diode is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Electric vehicle charging and power management.
  • High-frequency switching applications.

Q & A

  1. What is the voltage rating of the FFSH3065A?
    The voltage rating of the FFSH3065A is 650 V.
  2. What is the current rating of the FFSH3065A?
    The current rating of the FFSH3065A is 30 A.
  3. What is the forward voltage drop of the FFSH3065A at 16 A?
    The forward voltage drop of the FFSH3065A at 16 A is 1.5 V.
  4. What package type does the FFSH3065A use?
    The FFSH3065A uses the TO-247-2 package.
  5. Is the FFSH3065A RoHS compliant?
    Yes, the FFSH3065A is RoHS compliant.
  6. What technology does the FFSH3065A use?
    The FFSH3065A uses Silicon Carbide (SiC) technology.
  7. What are the benefits of using SiC technology in the FFSH3065A?
    The SiC technology provides superior switching performance and higher reliability compared to traditional silicon diodes.
  8. What are some typical applications for the FFSH3065A?
    The FFSH3065A is suitable for power supplies, motor drives, renewable energy systems, electric vehicle charging, and high-frequency switching applications.
  9. Where can I find detailed specifications for the FFSH3065A?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, RS Components, and Future Electronics.
  10. What is the significance of the TO-247-2 package for the FFSH3065A?
    The TO-247-2 package provides robust and reliable mounting, suitable for high-power applications.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):26A (DC)
Voltage - Forward (Vf) (Max) @ If:- 
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:1705pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSH3065A FFSH3065B FFSH5065A FFSP3065A FFSH4065A FFSH2065A
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky - Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V - 650 V 650 V 650 V
Current - Average Rectified (Io) 26A (DC) 37A (DC) - 30A (DC) 48A (DC) 25A (DC)
Voltage - Forward (Vf) (Max) @ If - 1.7 V @ 30 A - 1.75 V @ 30 A - -
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns - - 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 40 µA @ 650 V - 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 1705pF @ 1V, 100kHz 1260pF @ 1V, 100kHz - 1705pF @ 1V, 100kHz 1989pf @ 1V, 100kHz 1085pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole - Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 - TO-220-2 TO-247-2 TO-247-2
Supplier Device Package TO-247-2 TO-247-2 - TO-220-2L TO-247-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C - -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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