FFSH3065A
  • Share:

onsemi FFSH3065A

Manufacturer No:
FFSH3065A
Manufacturer:
onsemi
Package:
Tube
Description:
650V 30A SIC SBD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSH3065A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This component utilizes advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon diodes. The FFSH3065A is designed for high-power applications, providing efficient and reliable operation in demanding environments.

Key Specifications

ParameterValue
Voltage Rating (VDRM)650 V
Current Rating (IF)30 A
Forward Voltage Drop (VF)1.5 V @ 16 A
Package TypeTO-247-2
Number of Pins2
RoHS ComplianceYes

Key Features

  • High voltage rating of 650 V and current rating of 30 A, making it suitable for high-power applications.
  • Low forward voltage drop of 1.5 V at 16 A, enhancing efficiency and reducing power losses.
  • TO-247-2 package for robust and reliable mounting.
  • SiC technology provides superior switching performance and higher reliability compared to silicon diodes.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The FFSH3065A SiC Schottky Diode is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Electric vehicle charging and power management.
  • High-frequency switching applications.

Q & A

  1. What is the voltage rating of the FFSH3065A?
    The voltage rating of the FFSH3065A is 650 V.
  2. What is the current rating of the FFSH3065A?
    The current rating of the FFSH3065A is 30 A.
  3. What is the forward voltage drop of the FFSH3065A at 16 A?
    The forward voltage drop of the FFSH3065A at 16 A is 1.5 V.
  4. What package type does the FFSH3065A use?
    The FFSH3065A uses the TO-247-2 package.
  5. Is the FFSH3065A RoHS compliant?
    Yes, the FFSH3065A is RoHS compliant.
  6. What technology does the FFSH3065A use?
    The FFSH3065A uses Silicon Carbide (SiC) technology.
  7. What are the benefits of using SiC technology in the FFSH3065A?
    The SiC technology provides superior switching performance and higher reliability compared to traditional silicon diodes.
  8. What are some typical applications for the FFSH3065A?
    The FFSH3065A is suitable for power supplies, motor drives, renewable energy systems, electric vehicle charging, and high-frequency switching applications.
  9. Where can I find detailed specifications for the FFSH3065A?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, RS Components, and Future Electronics.
  10. What is the significance of the TO-247-2 package for the FFSH3065A?
    The TO-247-2 package provides robust and reliable mounting, suitable for high-power applications.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):26A (DC)
Voltage - Forward (Vf) (Max) @ If:- 
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:1705pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$16.93
51

Please send RFQ , we will respond immediately.

Similar Products

Part Number FFSH3065A FFSH3065B FFSH5065A FFSP3065A FFSH4065A FFSH2065A
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky - Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V - 650 V 650 V 650 V
Current - Average Rectified (Io) 26A (DC) 37A (DC) - 30A (DC) 48A (DC) 25A (DC)
Voltage - Forward (Vf) (Max) @ If - 1.7 V @ 30 A - 1.75 V @ 30 A - -
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns - - 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 40 µA @ 650 V - 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 1705pF @ 1V, 100kHz 1260pF @ 1V, 100kHz - 1705pF @ 1V, 100kHz 1989pf @ 1V, 100kHz 1085pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole - Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 - TO-220-2 TO-247-2 TO-247-2
Supplier Device Package TO-247-2 TO-247-2 - TO-220-2L TO-247-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C - -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE