Overview
The NRVTSA4100E is a Very Low Leakage Trench-based Schottky Rectifier produced by onsemi. This device leverages fine lithography trench-based Schottky technology to achieve very low forward voltage and low leakage, making it ideal for applications requiring high efficiency and stable switching characteristics over a wide temperature range.
This rectifier is particularly suited for output rectification in switching power supplies, offering low power loss, lower operating temperatures, and high surge capability. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications with unique site and control change requirements.
The device is Pb-free and halide-free, aligning with environmental and regulatory compliance standards.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 100 | V |
| Average Rectified Forward Current (TL = 142°C) | IF(AV) | 4.0 | A |
| Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 135°C) | IFRM | 8.0 | A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 150 | A |
| Storage Temperature Range | Tstg | -65 to +175 | °C |
| Operating Junction Temperature | TJ | -55 to +175 | °C |
| ESD Rating (Human Body Model) | ESD | 1B | |
| Instantaneous Forward Voltage (iF = 1.0 Amps, TJ = 25°C) | vF | 0.45 | V |
| Reverse Current (Rated dc Voltage, TJ = 25°C) | iR | 3.5 µA | |
| Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) | Cd | 55 pF | |
| Thermal Resistance, Junction-to-Lead, Steady State | RθJL | 16.2 °C/W | |
| Thermal Resistance, Junction-to-Ambient, Steady State | RθJA | 90 °C/W |
Key Features
- Fine Lithography Trench-based Schottky Technology for very low forward voltage and low leakage.
- Fast switching with exceptional temperature stability.
- Low power loss and lower operating temperature.
- Higher efficiency for achieving regulatory compliance.
- High surge capability.
- NRV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free and halide-free devices.
Applications
- Switching Power Supplies including Wireless, Smartphone and Notebook Adapters.
- High Frequency and DC-DC Converters.
- Freewheeling and OR-ing diodes.
- Reverse Battery Protection.
- Instrumentation.
- LED Lighting.
- General Converters.
- Lighting.
- Gasoline Direct Injection.
Q & A
- What is the peak repetitive reverse voltage of the NRVTSA4100E?
The peak repetitive reverse voltage (VRRM) is 100 V.
- What is the average rectified forward current of the NRVTSA4100E at TL = 142°C?
The average rectified forward current (IF(AV)) is 4.0 A at TL = 142°C.
- What is the non-repetitive peak surge current of the NRVTSA4100E?
The non-repetitive peak surge current (IFSM) is 150 A.
- What is the storage temperature range for the NRVTSA4100E?
The storage temperature range (Tstg) is -65 to +175°C.
- What is the operating junction temperature range for the NRVTSA4100E?
The operating junction temperature (TJ) range is -55 to +175°C.
- What is the ESD rating of the NRVTSA4100E according to the Human Body Model?
The ESD rating is 1B according to the Human Body Model.
- What is the instantaneous forward voltage of the NRVTSA4100E at iF = 1.0 Amps and TJ = 25°C?
The instantaneous forward voltage (vF) is 0.45 V at iF = 1.0 Amps and TJ = 25°C.
- What is the reverse current of the NRVTSA4100E at rated dc voltage and TJ = 25°C?
The reverse current (iR) is 3.5 µA at rated dc voltage and TJ = 25°C.
- What is the diode capacitance of the NRVTSA4100E at rated dc voltage, TJ = 25°C, and f = 1 MHz?
The diode capacitance (Cd) is 55 pF at rated dc voltage, TJ = 25°C, and f = 1 MHz.
- What are the typical applications of the NRVTSA4100E?
The typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, instrumentation, LED lighting, and more.
