NRVTSA4100T3G
  • Share:

onsemi NRVTSA4100T3G

Manufacturer No:
NRVTSA4100T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 4A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVTSA4100T3G is a Low Forward Voltage Trench-based Schottky Rectifier produced by onsemi. This device leverages advanced fine lithography trench-based Schottky technology to achieve very low forward voltage and low leakage, making it ideal for applications requiring high efficiency and stable switching characteristics over a wide temperature range. The NRVTSA4100T3G is particularly suited for output rectifier roles in switching power supplies, offering low power loss, lower operating temperatures, and high surge capability. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

RatingSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM100V
Average Rectified Forward Current (TL = 118°C)IF(AV)4.0A
Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 110°C)IFRM8.0A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM50A
Storage Temperature RangeTstg-65 to +150°C
Operating Junction TemperatureTJ-55 to +150°C
ESD Rating (Human Body Model)1B
Thermal Resistance, Junction-to-Lead, Steady StateRθJL16.2°C/W
Thermal Resistance, Junction-to-Ambient, Steady StateRθJA90°C/W
Instantaneous Forward Voltage (iF = 1.0 A, TJ = 25°C)vF0.43V
Reverse Current (Rated dc Voltage, TJ = 25°C)iR1.3 μA
Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz)Cd54.7 pF

Key Features

  • Fine Lithography Trench-based Schottky Technology for very low forward voltage and low leakage.
  • Fast switching with exceptional temperature stability.
  • Low power loss and lower operating temperature.
  • Higher efficiency for achieving regulatory compliance.
  • High surge capability.
  • Pb-free, halogen-free, and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.

Applications

  • Switching Power Supplies including Wireless, Smartphone and Notebook Adapters.
  • High Frequency and DC-DC Converters.
  • Freewheeling and OR-ing diodes.
  • Reverse Battery Protection.
  • Instrumentation.
  • LED Lighting.
  • General Converters.
  • Lighting.
  • Gasoline Direct Injection.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVTSA4100T3G?
    The peak repetitive reverse voltage is 100 V.
  2. What is the average rectified forward current at TL = 118°C?
    The average rectified forward current is 4.0 A.
  3. What is the thermal resistance from junction to lead?
    The thermal resistance from junction to lead is 16.2 °C/W.
  4. Is the NRVTSA4100T3G RoHS compliant?
    Yes, the NRVTSA4100T3G is Pb-free, halogen-free, and RoHS compliant.
  5. What are the typical applications of the NRVTSA4100T3G?
    Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, instrumentation, LED lighting, and more.
  6. What is the instantaneous forward voltage at iF = 1.0 A and TJ = 25°C?
    The instantaneous forward voltage is 0.43 V.
  7. What is the ESD rating of the NRVTSA4100T3G according to the Human Body Model?
    The ESD rating is 1B.
  8. Is the NRVTSA4100T3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable.
  9. What is the storage temperature range for the NRVTSA4100T3G?
    The storage temperature range is -65 to +150 °C.
  10. What is the operating junction temperature range for the NRVTSA4100T3G?
    The operating junction temperature range is -55 to +150 °C.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:660 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:25 µA @ 100 V
Capacitance @ Vr, F:54.7pF @ 100V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.57
300

Please send RFQ , we will respond immediately.

Similar Products

Part Number NRVTSA4100T3G NRVTSA4100ET3G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 4A 4A
Voltage - Forward (Vf) (Max) @ If 660 mV @ 4 A 680 mV @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 25 µA @ 100 V 9 µA @ 100 V
Capacitance @ Vr, F 54.7pF @ 100V, 1MHz 55pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 175°C

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD