1N4148W RHG
  • Share:

Taiwan Semiconductor Corporation 1N4148W RHG

Manufacturer No:
1N4148W RHG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 150MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148W RHG diode, manufactured by Taiwan Semiconductor Corporation, is a general-purpose, switching diode designed for a wide range of applications. It is known for its low power loss, high efficiency, and high surge current capability. This diode is particularly suitable for automated placement due to its SOD-123F package and is compliant with various regulatory standards, including RoHS and WEEE directives.

Key Specifications

ParameterSymbolValueUnit
Repetitive Reverse VoltageVRRM75V
Forward CurrentIF150mA
Forward VoltageVF1V
Reverse Recovery Timetrr4ns
Non-repetitive Peak Forward Surge CurrentIFSM2A
Operating TemperatureTJ-65 to +150°C
Junction Temperature RangeTJ-65 to +150°C
Storage Temperature RangeTSTG-65 to +150°C
Diode Case StyleSOD-123F
No. of Pins2
Moisture Sensitivity LevelMSL 1 - Unlimited

Key Features

  • Low power loss and high efficiency.
  • High surge current capability.
  • Ideal for automated placement due to its SOD-123F package.
  • Compliant with RoHS directive 2011/65/EU and WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21.
  • Meets JESD 201 class 1A whisker test.
  • Molding compound meets UL 94 V-0 flammability rating.

Applications

  • Switching mode power supply (SMPS).
  • On-board DC/DC converters.
  • Lighting applications.

Q & A

  1. What is the repetitive reverse voltage of the 1N4148W RHG diode?
    The repetitive reverse voltage is 75V.
  2. What is the forward current rating of the 1N4148W RHG diode?
    The forward current rating is 150mA.
  3. What is the forward voltage drop of the 1N4148W RHG diode?
    The forward voltage drop is 1V.
  4. What is the reverse recovery time of the 1N4148W RHG diode?
    The reverse recovery time is 4ns.
  5. What is the non-repetitive peak forward surge current of the 1N4148W RHG diode?
    The non-repetitive peak forward surge current is 2A.
  6. What is the operating temperature range of the 1N4148W RHG diode?
    The operating temperature range is -65°C to +150°C.
  7. Is the 1N4148W RHG diode RoHS compliant?
    Yes, it is compliant with the RoHS directive 2011/65/EU.
  8. What is the package type of the 1N4148W RHG diode?
    The package type is SOD-123F.
  9. What are some common applications of the 1N4148W RHG diode?
    Common applications include switching mode power supplies, on-board DC/DC converters, and lighting applications.
  10. Does the 1N4148W RHG diode meet any specific flammability ratings?
    Yes, the molding compound meets UL 94 V-0 flammability rating.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):150mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123F
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.22
2,869

Please send RFQ , we will respond immediately.

Same Series
1N914BW RHG
1N914BW RHG
DIODE GEN PURP 75V 150MA SOD123F
1N4448W RHG
1N4448W RHG
DIODE GEN PURP 75V 150MA SOD123F

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD

Related Product By Brand

1N4001G R0G
1N4001G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
MUR420S V7G
MUR420S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
1N4004G R1G
1N4004G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR160AHR1G
MUR160AHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR420HB0G
MUR420HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B3V0 L1G
BZV55B3V0 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55C24 L1G
BZV55C24 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 24V 500MW MINI MELF
BZV55C3V0 L1G
BZV55C3V0 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55C5V6 L1G
BZV55C5V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF