MUR120S R5G
  • Share:

Taiwan Semiconductor Corporation MUR120S R5G

Manufacturer No:
MUR120S R5G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR120S R5G is a high-performance, ultra-fast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed for use in various high-frequency applications, including switching power supplies, inverters, and as free-wheeling diodes. The MUR120S R5G features a robust design with a high operating junction temperature and low forward voltage, making it suitable for demanding electrical environments.

Key Specifications

Parameter Value Unit
Maximum DC Reverse Voltage (VRRM) 200 V
Maximum DC Blocking Voltage (VDC) 200 V
Average Rectified Forward Current (IF(AV)) 1 A
Surge Peak Forward Current (IFSM) 40 A
Junction Temperature (TJ) -55 to +175 °C
Storage Temperature (TSTG) -55 to +175 °C
Forward Voltage (VF) at IF = 1A, TJ = 25°C 0.875 V
Reverse Recovery Time (trr) 25 ns
Package Type DO-214AA (SMB)
Lead Shape Inward L-Lead
Mounting Type Surface Mount

Key Features

  • Ultra-Fast Recovery Time: The MUR120S R5G has a recovery time of 25 ns, making it ideal for high-frequency applications.
  • High Operating Junction Temperature: The device can operate at temperatures up to 175°C, ensuring reliability in demanding environments.
  • Low Forward Voltage: With a forward voltage of 0.875 V at 1 A, this diode minimizes power losses.
  • Low Leakage Current: The diode features low reverse current, reducing standby power consumption.
  • High Temperature Glass Passivated Junction: This ensures the device's durability and performance over a wide temperature range.
  • Pb-Free Package: The component is lead-free, complying with environmental regulations.

Applications

  • Switching Power Supplies: The MUR120S R5G is suitable for use in switching power supplies due to its fast recovery time and high operating temperature.
  • Inverters: Its ultra-fast recovery characteristics make it an excellent choice for inverter applications.
  • Free-Wheeling Diodes: The diode is often used as a free-wheeling diode in various power circuits to protect against back EMF.
  • High-Frequency Circuits: Its low forward voltage and fast recovery time make it ideal for high-frequency circuit applications.

Q & A

  1. What is the maximum DC reverse voltage of the MUR120S R5G?

    The maximum DC reverse voltage (VRRM) is 200 V.

  2. What is the average rectified forward current of the MUR120S R5G?

    The average rectified forward current (IF(AV)) is 1 A.

  3. What is the recovery time of the MUR120S R5G?

    The recovery time (trr) is 25 ns.

  4. What is the operating junction temperature range of the MUR120S R5G?

    The operating junction temperature range is -55°C to +175°C.

  5. What type of package does the MUR120S R5G come in?

    The MUR120S R5G comes in a DO-214AA (SMB) package.

  6. Is the MUR120S R5G Pb-free?

    Yes, the MUR120S R5G is a Pb-free device.

  7. What are some common applications of the MUR120S R5G?

    Common applications include switching power supplies, inverters, and as free-wheeling diodes.

  8. What is the forward voltage of the MUR120S R5G at 1 A and 25°C?

    The forward voltage (VF) at 1 A and 25°C is 0.875 V.

  9. What is the surge peak forward current (IFSM) of the MUR120S R5G?

    The surge peak forward current (IFSM) is 40 A.

  10. What is the storage temperature range for the MUR120S R5G?

    The storage temperature range is -55°C to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.33
2,640

Please send RFQ , we will respond immediately.

Same Series
MUR160S R5G
MUR160S R5G
DIODE GEN PURP 600V 1A DO214AA
MUR120S R5G
MUR120S R5G
DIODE GEN PURP 200V 1A DO214AA
MUR105S R5G
MUR105S R5G
DIODE GEN PURP 50V 1A DO214AA
MUR105SHR5G
MUR105SHR5G
DIODE GEN PURP 50V 1A DO214AA
MUR110S R5G
MUR110S R5G
DIODE GEN PURP 100V 1A DO214AA
MUR110SHR5G
MUR110SHR5G
DIODE GEN PURP 100V 1A DO214AA
MUR115S R5G
MUR115S R5G
DIODE GEN PURP 150V 1A DO214AA
MUR115SHR5G
MUR115SHR5G
DIODE GEN PURP 150V 1A DO214AA
MUR120SHR5G
MUR120SHR5G
DIODE GEN PURP 200V 1A DO214AA
MUR140S R5G
MUR140S R5G
DIODE GEN PURP 400V 1A DO214AA
MUR140SHR5G
MUR140SHR5G
DIODE GEN PURP 400V 1A DO214AA

Similar Products

Part Number MUR120S R5G MUR160S R5G MUR120SHR5G MUR140S R5G MUR110S R5G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 200 V 400 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 1.25 V @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - 25 ns 50 ns 25 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 2 µA @ 200 V 150 µA @ 400 V 50 µA @ 100 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41

Related Product By Brand

1.5KE68A R0G
1.5KE68A R0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR460S V7G
MUR460S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
BAS85-L0 L0G
BAS85-L0 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
BZV55C3V0 L0G
BZV55C3V0 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZX84C13 RFG
BZX84C13 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 300MW SOT23
BZX84C22 RFG
BZX84C22 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 22V 300MW SOT23
BZX84C2V4 RFG
BZX84C2V4 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 300MW SOT23
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZX585B6V2 RKG
BZX585B6V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 200MW SOD523F
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23