MUR160SHR5G
  • Share:

Taiwan Semiconductor Corporation MUR160SHR5G

Manufacturer No:
MUR160SHR5G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160SHR5G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed to handle high voltage and current requirements, making it suitable for various power management and electronic applications. It features a fast recovery time, which is essential for efficient operation in switching circuits.

Key Specifications

Parameter Value
Part Number MUR160SHR5G
Manufacturer Taiwan Semiconductor Corporation
Diode Type Standard Rectifier Diode
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.25V @ 1A
Reverse Recovery Time (trr) 50ns
Current - Reverse Leakage @ Vr 5µA @ 600V
Operating Temperature - Junction -65°C ~ 175°C
Package / Case DO-214AA (SMB)
Mounting Type Surface Mount

Key Features

  • High voltage and current handling capabilities, making it suitable for power management applications.
  • Fast recovery time of 50ns, which enhances efficiency in switching circuits.
  • Low forward voltage drop of 1.25V at 1A, reducing power losses.
  • Low reverse leakage current of 5µA at 600V, ensuring minimal current leakage.
  • Wide operating temperature range from -65°C to 175°C, suitable for various environmental conditions.
  • Surface mount package (DO-214AA) for easy integration into modern electronic designs.

Applications

  • Power supplies and DC-DC converters.
  • Switching regulators and inverters.
  • Automotive electronics, including battery charging and power systems.
  • Industrial power management systems.
  • Consumer electronics requiring high-efficiency rectification.

Q & A

  1. What is the maximum reverse voltage of the MUR160SHR5G diode?

    The maximum reverse voltage (Vr) of the MUR160SHR5G diode is 600V.

  2. What is the average rectified current (Io) of the MUR160SHR5G diode?

    The average rectified current (Io) of the MUR160SHR5G diode is 1A.

  3. What is the forward voltage drop (Vf) of the MUR160SHR5G diode at 1A?

    The forward voltage drop (Vf) of the MUR160SHR5G diode at 1A is 1.25V.

  4. What is the reverse recovery time (trr) of the MUR160SHR5G diode?

    The reverse recovery time (trr) of the MUR160SHR5G diode is 50ns.

  5. What is the operating temperature range of the MUR160SHR5G diode?

    The operating temperature range of the MUR160SHR5G diode is from -65°C to 175°C.

  6. What type of package does the MUR160SHR5G diode use?

    The MUR160SHR5G diode uses a DO-214AA (SMB) surface mount package.

  7. Is the MUR160SHR5G diode RoHS compliant?
  8. What are some common applications of the MUR160SHR5G diode?
  9. How does the fast recovery time of the MUR160SHR5G diode benefit its performance?

    The fast recovery time enhances the efficiency of the diode in switching circuits by reducing switching losses and improving overall system performance.

  10. What is the significance of the low forward voltage drop in the MUR160SHR5G diode?

    The low forward voltage drop minimizes power losses during operation, leading to higher efficiency and reduced heat generation.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
195

Please send RFQ , we will respond immediately.

Same Series
MUR160S R5G
MUR160S R5G
DIODE GEN PURP 600V 1A DO214AA
MUR120S R5G
MUR120S R5G
DIODE GEN PURP 200V 1A DO214AA
MUR105S R5G
MUR105S R5G
DIODE GEN PURP 50V 1A DO214AA
MUR105SHR5G
MUR105SHR5G
DIODE GEN PURP 50V 1A DO214AA
MUR110S R5G
MUR110S R5G
DIODE GEN PURP 100V 1A DO214AA
MUR110SHR5G
MUR110SHR5G
DIODE GEN PURP 100V 1A DO214AA
MUR115S R5G
MUR115S R5G
DIODE GEN PURP 150V 1A DO214AA
MUR115SHR5G
MUR115SHR5G
DIODE GEN PURP 150V 1A DO214AA
MUR140S R5G
MUR140S R5G
DIODE GEN PURP 400V 1A DO214AA
MUR140SHR5G
MUR140SHR5G
DIODE GEN PURP 400V 1A DO214AA
MUR160SHR5G
MUR160SHR5G
DIODE GEN PURP 600V 1A DO214AA

Similar Products

Part Number MUR160SHR5G MUR110SHR5G MUR120SHR5G MUR140SHR5G MUR160S R5G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 25 ns 25 ns 50 ns -
Current - Reverse Leakage @ Vr 5 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

BAW56 RFG
BAW56 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
MUR1660CT
MUR1660CT
Taiwan Semiconductor Corporation
DIODE ARRAY GP 600V 16A TO220AB
BAV99S REG
BAV99S REG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT363
BAT42W RHG
BAT42W RHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD123
1N4002G B0G
1N4002G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
1N5821HB0G
1N5821HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR420 B0G
MUR420 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BAT43X-M0 RSG
BAT43X-M0 RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55C6V8 L0G
BZV55C6V8 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZV55B3V3 L1G
BZV55B3V3 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55C5V1 L1G
BZV55C5V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
1N4733G A0G
1N4733G A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W DO204AL