MUR160SHR5G
  • Share:

Taiwan Semiconductor Corporation MUR160SHR5G

Manufacturer No:
MUR160SHR5G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160SHR5G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed to handle high voltage and current requirements, making it suitable for various power management and electronic applications. It features a fast recovery time, which is essential for efficient operation in switching circuits.

Key Specifications

Parameter Value
Part Number MUR160SHR5G
Manufacturer Taiwan Semiconductor Corporation
Diode Type Standard Rectifier Diode
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.25V @ 1A
Reverse Recovery Time (trr) 50ns
Current - Reverse Leakage @ Vr 5µA @ 600V
Operating Temperature - Junction -65°C ~ 175°C
Package / Case DO-214AA (SMB)
Mounting Type Surface Mount

Key Features

  • High voltage and current handling capabilities, making it suitable for power management applications.
  • Fast recovery time of 50ns, which enhances efficiency in switching circuits.
  • Low forward voltage drop of 1.25V at 1A, reducing power losses.
  • Low reverse leakage current of 5µA at 600V, ensuring minimal current leakage.
  • Wide operating temperature range from -65°C to 175°C, suitable for various environmental conditions.
  • Surface mount package (DO-214AA) for easy integration into modern electronic designs.

Applications

  • Power supplies and DC-DC converters.
  • Switching regulators and inverters.
  • Automotive electronics, including battery charging and power systems.
  • Industrial power management systems.
  • Consumer electronics requiring high-efficiency rectification.

Q & A

  1. What is the maximum reverse voltage of the MUR160SHR5G diode?

    The maximum reverse voltage (Vr) of the MUR160SHR5G diode is 600V.

  2. What is the average rectified current (Io) of the MUR160SHR5G diode?

    The average rectified current (Io) of the MUR160SHR5G diode is 1A.

  3. What is the forward voltage drop (Vf) of the MUR160SHR5G diode at 1A?

    The forward voltage drop (Vf) of the MUR160SHR5G diode at 1A is 1.25V.

  4. What is the reverse recovery time (trr) of the MUR160SHR5G diode?

    The reverse recovery time (trr) of the MUR160SHR5G diode is 50ns.

  5. What is the operating temperature range of the MUR160SHR5G diode?

    The operating temperature range of the MUR160SHR5G diode is from -65°C to 175°C.

  6. What type of package does the MUR160SHR5G diode use?

    The MUR160SHR5G diode uses a DO-214AA (SMB) surface mount package.

  7. Is the MUR160SHR5G diode RoHS compliant?
  8. What are some common applications of the MUR160SHR5G diode?
  9. How does the fast recovery time of the MUR160SHR5G diode benefit its performance?

    The fast recovery time enhances the efficiency of the diode in switching circuits by reducing switching losses and improving overall system performance.

  10. What is the significance of the low forward voltage drop in the MUR160SHR5G diode?

    The low forward voltage drop minimizes power losses during operation, leading to higher efficiency and reduced heat generation.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
195

Please send RFQ , we will respond immediately.

Same Series
MUR160S R5G
MUR160S R5G
DIODE GEN PURP 600V 1A DO214AA
MUR120S R5G
MUR120S R5G
DIODE GEN PURP 200V 1A DO214AA
MUR105S R5G
MUR105S R5G
DIODE GEN PURP 50V 1A DO214AA
MUR105SHR5G
MUR105SHR5G
DIODE GEN PURP 50V 1A DO214AA
MUR110S R5G
MUR110S R5G
DIODE GEN PURP 100V 1A DO214AA
MUR110SHR5G
MUR110SHR5G
DIODE GEN PURP 100V 1A DO214AA
MUR115S R5G
MUR115S R5G
DIODE GEN PURP 150V 1A DO214AA
MUR115SHR5G
MUR115SHR5G
DIODE GEN PURP 150V 1A DO214AA
MUR120SHR5G
MUR120SHR5G
DIODE GEN PURP 200V 1A DO214AA
MUR140S R5G
MUR140S R5G
DIODE GEN PURP 400V 1A DO214AA
MUR140SHR5G
MUR140SHR5G
DIODE GEN PURP 400V 1A DO214AA

Similar Products

Part Number MUR160SHR5G MUR110SHR5G MUR120SHR5G MUR140SHR5G MUR160S R5G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 25 ns 25 ns 50 ns -
Current - Reverse Leakage @ Vr 5 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

MBR10100CTH
MBR10100CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO220
BZV55C16 L0G
BZV55C16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C68 L0G
BZV55C68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55B11 L1G
BZV55B11 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B18 L1G
BZV55B18 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BZV55C16 L1G
BZV55C16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C6V2 L1G
BZV55C6V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZX55C8V2 A0G
BZX55C8V2 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW DO35
BZX79C5V6 A0G
BZX79C5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BC848B RFG
BC848B RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT23
BC807-40W RFG
BC807-40W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323
BSS84W
BSS84W
Taiwan Semiconductor Corporation
-60, -0.14, SINGLE P-CHANNEL