MUR160AH
  • Share:

Taiwan Semiconductor Corporation MUR160AH

Manufacturer No:
MUR160AH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160AH is an ultrafast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for use in various high-frequency applications, including switching power supplies, inverters, and as free-wheeling diodes. It is known for its fast recovery times, making it suitable for high-efficiency power conversion systems.

Key Specifications

ParameterValue
Current Rating (IO)1 A
Reverse Voltage (VRRM)600 V
Forward Voltage (VF)1.25 V
Recovery Time (trr)75 ns
Maximum Forward Surge Current (IFSM)35 A
Maximum Leakage Current (IR)0.005 mA
Operating Junction Temperature175°C
Case TypeEpoxy, Molded (DO204AL)
Lead Temperature for Soldering260°C Max. for 10 Seconds

Key Features

  • Ultrafast recovery times of 75 nanoseconds, making it ideal for high-frequency applications.
  • Low forward voltage drop, reducing power losses.
  • Low leakage current, enhancing overall efficiency.
  • High temperature glass passivated junction for reliability.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • High operating junction temperature of 175°C.

Applications

The MUR160AH is suitable for a variety of applications, including:

  • Switching power supplies: Due to its ultrafast recovery time, it is ideal for high-efficiency power conversion.
  • Inverters: Used in inverter circuits to manage high-frequency switching.
  • Free-wheeling diodes: Acts as a free-wheeling diode in motor control and other power electronic circuits.
  • Automotive and industrial power systems: Its high voltage and current ratings make it suitable for various automotive and industrial power applications.

Q & A

  1. What is the maximum reverse voltage of the MUR160AH?
    The maximum reverse voltage (VRRM) is 600 V.
  2. What is the recovery time of the MUR160AH?
    The recovery time (trr) is 75 nanoseconds.
  3. What is the maximum forward surge current of the MUR160AH?
    The maximum forward surge current (IFSM) is 35 A.
  4. What is the operating junction temperature of the MUR160AH?
    The operating junction temperature is 175°C.
  5. What type of case does the MUR160AH have?
    The case type is epoxy, molded (DO204AL).
  6. Is the MUR160AH suitable for high-frequency applications?
    Yes, it is designed for high-frequency applications due to its ultrafast recovery time.
  7. What are some common applications of the MUR160AH?
    Common applications include switching power supplies, inverters, and as free-wheeling diodes in various power electronic circuits.
  8. What is the maximum leakage current of the MUR160AH?
    The maximum leakage current (IR) is 0.005 mA.
  9. Is the MUR160AH corrosion-resistant?
    Yes, it has a corrosion-resistant finish and readily solderable terminal leads.
  10. What is the lead temperature for soldering the MUR160AH?
    The lead temperature for soldering is 260°C Max. for 10 Seconds.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.11
8,365

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MUR160AH MUR160SH MUR160H MUR190AH MUR160A
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 900 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 75 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz - 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-214AA, SMB DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-214AA (SMB) DO-204AC (DO-15) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 175°C

Related Product By Categories

MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

1.5KE6.8AHA0G
1.5KE6.8AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BAS40-05 RFG
BAS40-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 40V SOT23
BAV21WS R9G
BAV21WS R9G
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
BAS21W RVG
BAS21W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOT323
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR420HB0G
MUR420HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
MUR460HB0G
MUR460HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT43X-M0 RSG
BAT43X-M0 RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55B20 L0G
BZV55B20 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZX84C24 RFG
BZX84C24 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 24V 300MW SOT23
BZV55C13 L1G
BZV55C13 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZX79C6V8 A0G
BZX79C6V8 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW DO35