MUR160AH
  • Share:

Taiwan Semiconductor Corporation MUR160AH

Manufacturer No:
MUR160AH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160AH is an ultrafast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for use in various high-frequency applications, including switching power supplies, inverters, and as free-wheeling diodes. It is known for its fast recovery times, making it suitable for high-efficiency power conversion systems.

Key Specifications

ParameterValue
Current Rating (IO)1 A
Reverse Voltage (VRRM)600 V
Forward Voltage (VF)1.25 V
Recovery Time (trr)75 ns
Maximum Forward Surge Current (IFSM)35 A
Maximum Leakage Current (IR)0.005 mA
Operating Junction Temperature175°C
Case TypeEpoxy, Molded (DO204AL)
Lead Temperature for Soldering260°C Max. for 10 Seconds

Key Features

  • Ultrafast recovery times of 75 nanoseconds, making it ideal for high-frequency applications.
  • Low forward voltage drop, reducing power losses.
  • Low leakage current, enhancing overall efficiency.
  • High temperature glass passivated junction for reliability.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • High operating junction temperature of 175°C.

Applications

The MUR160AH is suitable for a variety of applications, including:

  • Switching power supplies: Due to its ultrafast recovery time, it is ideal for high-efficiency power conversion.
  • Inverters: Used in inverter circuits to manage high-frequency switching.
  • Free-wheeling diodes: Acts as a free-wheeling diode in motor control and other power electronic circuits.
  • Automotive and industrial power systems: Its high voltage and current ratings make it suitable for various automotive and industrial power applications.

Q & A

  1. What is the maximum reverse voltage of the MUR160AH?
    The maximum reverse voltage (VRRM) is 600 V.
  2. What is the recovery time of the MUR160AH?
    The recovery time (trr) is 75 nanoseconds.
  3. What is the maximum forward surge current of the MUR160AH?
    The maximum forward surge current (IFSM) is 35 A.
  4. What is the operating junction temperature of the MUR160AH?
    The operating junction temperature is 175°C.
  5. What type of case does the MUR160AH have?
    The case type is epoxy, molded (DO204AL).
  6. Is the MUR160AH suitable for high-frequency applications?
    Yes, it is designed for high-frequency applications due to its ultrafast recovery time.
  7. What are some common applications of the MUR160AH?
    Common applications include switching power supplies, inverters, and as free-wheeling diodes in various power electronic circuits.
  8. What is the maximum leakage current of the MUR160AH?
    The maximum leakage current (IR) is 0.005 mA.
  9. Is the MUR160AH corrosion-resistant?
    Yes, it has a corrosion-resistant finish and readily solderable terminal leads.
  10. What is the lead temperature for soldering the MUR160AH?
    The lead temperature for soldering is 260°C Max. for 10 Seconds.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.11
8,365

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MUR160AH MUR160SH MUR160H MUR190AH MUR160A
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 900 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 75 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz - 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-214AA, SMB DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-214AA (SMB) DO-204AC (DO-15) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 175°C

Related Product By Categories

NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

1.5KE68A B0G
1.5KE68A B0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
BAV99 RFG
BAV99 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
BAS21A RFG
BAS21A RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
MBR10100CTH
MBR10100CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO220
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N4004GR0
1N4004GR0
Taiwan Semiconductor Corporation
1A,400V,STD.GLASS PASSIVATED REC
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZV55B9V1 L0G
BZV55B9V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
BC857C RFG
BC857C RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23