English
MUR160AH
  • Share:

Taiwan Semiconductor Corporation MUR160AH

Manufacturer No:
MUR160AH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160AH is an ultrafast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for use in various high-frequency applications, including switching power supplies, inverters, and as free-wheeling diodes. It is known for its fast recovery times, making it suitable for high-efficiency power conversion systems.

Key Specifications

ParameterValue
Current Rating (IO)1 A
Reverse Voltage (VRRM)600 V
Forward Voltage (VF)1.25 V
Recovery Time (trr)75 ns
Maximum Forward Surge Current (IFSM)35 A
Maximum Leakage Current (IR)0.005 mA
Operating Junction Temperature175°C
Case TypeEpoxy, Molded (DO204AL)
Lead Temperature for Soldering260°C Max. for 10 Seconds

Key Features

  • Ultrafast recovery times of 75 nanoseconds, making it ideal for high-frequency applications.
  • Low forward voltage drop, reducing power losses.
  • Low leakage current, enhancing overall efficiency.
  • High temperature glass passivated junction for reliability.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • High operating junction temperature of 175°C.

Applications

The MUR160AH is suitable for a variety of applications, including:

  • Switching power supplies: Due to its ultrafast recovery time, it is ideal for high-efficiency power conversion.
  • Inverters: Used in inverter circuits to manage high-frequency switching.
  • Free-wheeling diodes: Acts as a free-wheeling diode in motor control and other power electronic circuits.
  • Automotive and industrial power systems: Its high voltage and current ratings make it suitable for various automotive and industrial power applications.

Q & A

  1. What is the maximum reverse voltage of the MUR160AH?
    The maximum reverse voltage (VRRM) is 600 V.
  2. What is the recovery time of the MUR160AH?
    The recovery time (trr) is 75 nanoseconds.
  3. What is the maximum forward surge current of the MUR160AH?
    The maximum forward surge current (IFSM) is 35 A.
  4. What is the operating junction temperature of the MUR160AH?
    The operating junction temperature is 175°C.
  5. What type of case does the MUR160AH have?
    The case type is epoxy, molded (DO204AL).
  6. Is the MUR160AH suitable for high-frequency applications?
    Yes, it is designed for high-frequency applications due to its ultrafast recovery time.
  7. What are some common applications of the MUR160AH?
    Common applications include switching power supplies, inverters, and as free-wheeling diodes in various power electronic circuits.
  8. What is the maximum leakage current of the MUR160AH?
    The maximum leakage current (IR) is 0.005 mA.
  9. Is the MUR160AH corrosion-resistant?
    Yes, it has a corrosion-resistant finish and readily solderable terminal leads.
  10. What is the lead temperature for soldering the MUR160AH?
    The lead temperature for soldering is 260°C Max. for 10 Seconds.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.11
8,365

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MUR160AH MUR160SH MUR160H MUR190AH MUR160A
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 900 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 75 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz - 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-214AA, SMB DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-214AA (SMB) DO-204AC (DO-15) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 175°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

SMBJ6V0A
SMBJ6V0A
Taiwan Semiconductor Corporation
TVS DIODE 6VWM 10.3VC DO214AA
BAS70-06 RFG
BAS70-06 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BAT54CD REG
BAT54CD REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
BAT43X RSG
BAT43X RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD523F
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
ZM4733A L0G
ZM4733A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W MELF
BZV55C13 L1G
BZV55C13 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZV55C16 L1G
BZV55C16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C36 L1G
BZV55C36 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 36V 500MW MINI MELF
BZX79C3V9 A0G
BZX79C3V9 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW DO35
BC848B RFG
BC848B RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT23