MUR180EG
  • Share:

onsemi MUR180EG

Manufacturer No:
MUR180EG
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 800V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR180EG is a high-performance, ultrafast rectifier diode produced by onsemi. This device is part of the 'E' series, known for its high reverse energy capability and ultrafast recovery times. It is designed for use in switching power supplies, inverters, and as free-wheeling diodes in various applications. The MUR180EG is characterized by its robust construction, high operating junction temperature, and low forward voltage, making it suitable for demanding environments.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 800 V
Working Peak Reverse Voltage (VRWM) 800 V
DC Blocking Voltage (VR) 800 V
Average Rectified Forward Current (IF(AV)) 1.0 A @ TA = 95°C A
Non-Repetitive Peak Surge Current (IFSM) 35 A A
Operating Junction Temperature (TJ) -65 to +175 °C °C
Storage Temperature Range (Tstg) -65 to +175 °C °C
Maximum Instantaneous Forward Voltage (VF) 1.50 V @ IF = 1.0 A, TJ = 150°C V
Maximum Reverse Recovery Time (trr) 75 ns @ IF = 1.0 A, di/dt = 50 A/μs ns
Maximum Forward Recovery Time (tfr) 75 ns @ IF = 1.0 A, di/dt = 100 A/μs ns
Controlled Avalanche Energy (WAVAL) 10 mJ mJ
Package Type DO-204AL, DO-41, Axial

Key Features

  • Ultrafast 75 nanosecond recovery time, ensuring high efficiency in switching applications.
  • High reverse energy capability with 10 mJoules avalanche energy guaranteed.
  • Excellent protection against voltage transients in switching inductive load circuits.
  • Low forward voltage and low leakage current, reducing power losses.
  • High operating junction temperature of up to 175°C, suitable for demanding environments.
  • High temperature glass passivated junction for reliability.
  • Pb-free and corrosion-resistant epoxy molded case with readily solderable terminal leads.

Applications

The MUR180EG is designed for use in various high-performance applications, including:

  • Switching power supplies.
  • Inverters.
  • Free-wheeling diodes in inductive load circuits.
  • High-frequency rectification.
  • Power conversion systems requiring high reliability and efficiency.

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the MUR180EG?

    The peak repetitive reverse voltage (VRRM) of the MUR180EG is 800 V.

  2. What is the average rectified forward current (IF(AV)) of the MUR180EG?

    The average rectified forward current (IF(AV)) of the MUR180EG is 1.0 A at an ambient temperature (TA) of 95°C.

  3. What is the maximum operating junction temperature (TJ) of the MUR180EG?

    The maximum operating junction temperature (TJ) of the MUR180EG is 175°C.

  4. What is the recovery time of the MUR180EG?

    The maximum reverse recovery time (trr) of the MUR180EG is 75 ns at IF = 1.0 A and di/dt = 50 A/μs.

  5. Is the MUR180EG Pb-free?
  6. What are the typical applications of the MUR180EG?

    The MUR180EG is typically used in switching power supplies, inverters, and as free-wheeling diodes in inductive load circuits.

  7. What is the controlled avalanche energy of the MUR180EG?

    The controlled avalanche energy (WAVAL) of the MUR180EG is 10 mJ.

  8. What is the package type of the MUR180EG?

    The MUR180EG comes in DO-204AL and DO-41 axial lead packages.

  9. Is the MUR180EG suitable for high-frequency applications?
  10. What is the maximum instantaneous forward voltage (VF) of the MUR180EG?

    The maximum instantaneous forward voltage (VF) of the MUR180EG is 1.50 V at IF = 1.0 A and TJ = 150°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:10 µA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.48
824

Please send RFQ , we will respond immediately.

Same Series
MUR1100ERLG
MUR1100ERLG
DIODE GEN PURP 1000V 1A AXIAL
MUR1100EG
MUR1100EG
DIODE GEN PURP 1000V 1A AXIAL
MUR180ERLG
MUR180ERLG
DIODE GEN PURP 800V 1A AXIAL
MUR180E
MUR180E
DIODE GEN PURP 800V 1A AXIAL
MUR1100ERL
MUR1100ERL
DIODE GEN PURP 1KV 1A AXIAL

Similar Products

Part Number MUR180EG MUR180E
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 800 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 1 A 1.75 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns
Current - Reverse Leakage @ Vr 10 µA @ 800 V 10 µA @ 800 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT