MUR180EG
  • Share:

onsemi MUR180EG

Manufacturer No:
MUR180EG
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 800V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR180EG is a high-performance, ultrafast rectifier diode produced by onsemi. This device is part of the 'E' series, known for its high reverse energy capability and ultrafast recovery times. It is designed for use in switching power supplies, inverters, and as free-wheeling diodes in various applications. The MUR180EG is characterized by its robust construction, high operating junction temperature, and low forward voltage, making it suitable for demanding environments.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 800 V
Working Peak Reverse Voltage (VRWM) 800 V
DC Blocking Voltage (VR) 800 V
Average Rectified Forward Current (IF(AV)) 1.0 A @ TA = 95°C A
Non-Repetitive Peak Surge Current (IFSM) 35 A A
Operating Junction Temperature (TJ) -65 to +175 °C °C
Storage Temperature Range (Tstg) -65 to +175 °C °C
Maximum Instantaneous Forward Voltage (VF) 1.50 V @ IF = 1.0 A, TJ = 150°C V
Maximum Reverse Recovery Time (trr) 75 ns @ IF = 1.0 A, di/dt = 50 A/μs ns
Maximum Forward Recovery Time (tfr) 75 ns @ IF = 1.0 A, di/dt = 100 A/μs ns
Controlled Avalanche Energy (WAVAL) 10 mJ mJ
Package Type DO-204AL, DO-41, Axial

Key Features

  • Ultrafast 75 nanosecond recovery time, ensuring high efficiency in switching applications.
  • High reverse energy capability with 10 mJoules avalanche energy guaranteed.
  • Excellent protection against voltage transients in switching inductive load circuits.
  • Low forward voltage and low leakage current, reducing power losses.
  • High operating junction temperature of up to 175°C, suitable for demanding environments.
  • High temperature glass passivated junction for reliability.
  • Pb-free and corrosion-resistant epoxy molded case with readily solderable terminal leads.

Applications

The MUR180EG is designed for use in various high-performance applications, including:

  • Switching power supplies.
  • Inverters.
  • Free-wheeling diodes in inductive load circuits.
  • High-frequency rectification.
  • Power conversion systems requiring high reliability and efficiency.

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the MUR180EG?

    The peak repetitive reverse voltage (VRRM) of the MUR180EG is 800 V.

  2. What is the average rectified forward current (IF(AV)) of the MUR180EG?

    The average rectified forward current (IF(AV)) of the MUR180EG is 1.0 A at an ambient temperature (TA) of 95°C.

  3. What is the maximum operating junction temperature (TJ) of the MUR180EG?

    The maximum operating junction temperature (TJ) of the MUR180EG is 175°C.

  4. What is the recovery time of the MUR180EG?

    The maximum reverse recovery time (trr) of the MUR180EG is 75 ns at IF = 1.0 A and di/dt = 50 A/μs.

  5. Is the MUR180EG Pb-free?
  6. What are the typical applications of the MUR180EG?

    The MUR180EG is typically used in switching power supplies, inverters, and as free-wheeling diodes in inductive load circuits.

  7. What is the controlled avalanche energy of the MUR180EG?

    The controlled avalanche energy (WAVAL) of the MUR180EG is 10 mJ.

  8. What is the package type of the MUR180EG?

    The MUR180EG comes in DO-204AL and DO-41 axial lead packages.

  9. Is the MUR180EG suitable for high-frequency applications?
  10. What is the maximum instantaneous forward voltage (VF) of the MUR180EG?

    The maximum instantaneous forward voltage (VF) of the MUR180EG is 1.50 V at IF = 1.0 A and TJ = 150°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:10 µA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.48
824

Please send RFQ , we will respond immediately.

Same Series
MUR1100ERLG
MUR1100ERLG
DIODE GEN PURP 1000V 1A AXIAL
MUR1100EG
MUR1100EG
DIODE GEN PURP 1000V 1A AXIAL
MUR180ERLG
MUR180ERLG
DIODE GEN PURP 800V 1A AXIAL
MUR180E
MUR180E
DIODE GEN PURP 800V 1A AXIAL
MUR1100ERL
MUR1100ERL
DIODE GEN PURP 1KV 1A AXIAL

Similar Products

Part Number MUR180EG MUR180E
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 800 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 1 A 1.75 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns
Current - Reverse Leakage @ Vr 10 µA @ 800 V 10 µA @ 800 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK