MUR180EG
  • Share:

onsemi MUR180EG

Manufacturer No:
MUR180EG
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 800V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR180EG is a high-performance, ultrafast rectifier diode produced by onsemi. This device is part of the 'E' series, known for its high reverse energy capability and ultrafast recovery times. It is designed for use in switching power supplies, inverters, and as free-wheeling diodes in various applications. The MUR180EG is characterized by its robust construction, high operating junction temperature, and low forward voltage, making it suitable for demanding environments.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 800 V
Working Peak Reverse Voltage (VRWM) 800 V
DC Blocking Voltage (VR) 800 V
Average Rectified Forward Current (IF(AV)) 1.0 A @ TA = 95°C A
Non-Repetitive Peak Surge Current (IFSM) 35 A A
Operating Junction Temperature (TJ) -65 to +175 °C °C
Storage Temperature Range (Tstg) -65 to +175 °C °C
Maximum Instantaneous Forward Voltage (VF) 1.50 V @ IF = 1.0 A, TJ = 150°C V
Maximum Reverse Recovery Time (trr) 75 ns @ IF = 1.0 A, di/dt = 50 A/μs ns
Maximum Forward Recovery Time (tfr) 75 ns @ IF = 1.0 A, di/dt = 100 A/μs ns
Controlled Avalanche Energy (WAVAL) 10 mJ mJ
Package Type DO-204AL, DO-41, Axial

Key Features

  • Ultrafast 75 nanosecond recovery time, ensuring high efficiency in switching applications.
  • High reverse energy capability with 10 mJoules avalanche energy guaranteed.
  • Excellent protection against voltage transients in switching inductive load circuits.
  • Low forward voltage and low leakage current, reducing power losses.
  • High operating junction temperature of up to 175°C, suitable for demanding environments.
  • High temperature glass passivated junction for reliability.
  • Pb-free and corrosion-resistant epoxy molded case with readily solderable terminal leads.

Applications

The MUR180EG is designed for use in various high-performance applications, including:

  • Switching power supplies.
  • Inverters.
  • Free-wheeling diodes in inductive load circuits.
  • High-frequency rectification.
  • Power conversion systems requiring high reliability and efficiency.

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the MUR180EG?

    The peak repetitive reverse voltage (VRRM) of the MUR180EG is 800 V.

  2. What is the average rectified forward current (IF(AV)) of the MUR180EG?

    The average rectified forward current (IF(AV)) of the MUR180EG is 1.0 A at an ambient temperature (TA) of 95°C.

  3. What is the maximum operating junction temperature (TJ) of the MUR180EG?

    The maximum operating junction temperature (TJ) of the MUR180EG is 175°C.

  4. What is the recovery time of the MUR180EG?

    The maximum reverse recovery time (trr) of the MUR180EG is 75 ns at IF = 1.0 A and di/dt = 50 A/μs.

  5. Is the MUR180EG Pb-free?
  6. What are the typical applications of the MUR180EG?

    The MUR180EG is typically used in switching power supplies, inverters, and as free-wheeling diodes in inductive load circuits.

  7. What is the controlled avalanche energy of the MUR180EG?

    The controlled avalanche energy (WAVAL) of the MUR180EG is 10 mJ.

  8. What is the package type of the MUR180EG?

    The MUR180EG comes in DO-204AL and DO-41 axial lead packages.

  9. Is the MUR180EG suitable for high-frequency applications?
  10. What is the maximum instantaneous forward voltage (VF) of the MUR180EG?

    The maximum instantaneous forward voltage (VF) of the MUR180EG is 1.50 V at IF = 1.0 A and TJ = 150°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:10 µA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.48
824

Please send RFQ , we will respond immediately.

Same Series
MUR1100ERLG
MUR1100ERLG
DIODE GEN PURP 1000V 1A AXIAL
MUR1100EG
MUR1100EG
DIODE GEN PURP 1000V 1A AXIAL
MUR180ERLG
MUR180ERLG
DIODE GEN PURP 800V 1A AXIAL
MUR180E
MUR180E
DIODE GEN PURP 800V 1A AXIAL
MUR1100ERL
MUR1100ERL
DIODE GEN PURP 1KV 1A AXIAL

Similar Products

Part Number MUR180EG MUR180E
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 800 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 1 A 1.75 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns
Current - Reverse Leakage @ Vr 10 µA @ 800 V 10 µA @ 800 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD

Related Product By Brand

SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3