NSVBAS16W1T1G
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onsemi NSVBAS16W1T1G

Manufacturer No:
NSVBAS16W1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
SS SC88 SWITCHING DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVBAS16W1T1G is a diode array produced by onsemi, designed for various electronic applications requiring low-leakage and high reliability. This component features three independent diodes in a single package, making it ideal for space-constrained designs. The diodes are housed in a surface mount package, specifically the 6-TSSOP, SC-88, or SOT-363, which facilitates easy integration into modern PCB designs.

Key Specifications

ParameterValue
Voltage - Reverse (Vr)100 V
Current - Forward (If)200 mA
Voltage - Forward (Vf) @ If1.2 V @ 100 mA
Reverse Recovery Time (trr)3 ns
Package Type6-TSSOP, SC-88, SOT-363
Assembly TypeSMT Assembly

Key Features

  • Three independent diodes in a single package, reducing board space and increasing design flexibility.
  • Low-leakage characteristics, making it suitable for applications requiring minimal current leakage.
  • Fast reverse recovery time of 3 ns, ideal for high-speed switching applications.
  • Surface mount packaging (6-TSSOP, SC-88, SOT-363) for easy PCB integration.

Applications

The NSVBAS16W1T1G is versatile and can be used in a variety of applications, including:

  • Switching circuits where low leakage and fast recovery times are critical.
  • Protection circuits for voltage clamping and transient suppression.
  • High-frequency applications such as RF and microwave circuits.
  • General-purpose rectification and voltage regulation in electronic devices.

Q & A

  1. What is the maximum reverse voltage of the NSVBAS16W1T1G?
    The maximum reverse voltage is 100 V.
  2. What is the forward current rating of each diode in the NSVBAS16W1T1G?
    Each diode is rated for a forward current of 200 mA.
  3. What is the typical forward voltage drop (Vf) at 100 mA?
    The typical forward voltage drop is 1.2 V at 100 mA.
  4. What is the reverse recovery time (trr) of the NSVBAS16W1T1G?
    The reverse recovery time is 3 ns.
  5. In what package types is the NSVBAS16W1T1G available?
    The NSVBAS16W1T1G is available in 6-TSSOP, SC-88, and SOT-363 packages.
  6. What type of assembly is required for the NSVBAS16W1T1G?
    The NSVBAS16W1T1G requires SMT (Surface Mount Technology) assembly.
  7. What are some common applications for the NSVBAS16W1T1G?
    Common applications include switching circuits, protection circuits, high-frequency applications, and general-purpose rectification.
  8. Why is the NSVBAS16W1T1G beneficial for space-constrained designs?
    The NSVBAS16W1T1G is beneficial because it integrates three independent diodes into a single package, reducing the overall board space required.
  9. What are the key features of the NSVBAS16W1T1G that make it suitable for high-speed switching applications?
    The key features include low-leakage characteristics and a fast reverse recovery time of 3 ns.
  10. Where can I find detailed specifications and datasheets for the NSVBAS16W1T1G?
    Detailed specifications and datasheets can be found on the official onsemi website, as well as through distributors like Digi-Key, Mouser, and JLCPCB.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):3 ns
Current - Reverse Leakage @ Vr:1 µA @ 100 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
Operating Temperature - Junction:150°C (Max)
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