Overview
The MUR1100EG is a high-performance ultrafast recovery rectifier produced by onsemi. This device is part of the Ultrafast "E" Series, designed to meet the demands of modern switching power supplies, inverters, and free-wheeling diode applications. The MUR1100EG offers exceptional characteristics such as high reverse voltage capability, ultrafast recovery time, and excellent protection against voltage transients, making it an ideal choice for a wide range of power electronics applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 1000 | V |
| Working Peak Reverse Voltage | VRWM | 1000 | V |
| DC Blocking Voltage | VR | 1000 | V |
| Average Rectified Forward Current | IF(AV) | 1.0 A @ TA = 95°C | A |
| Non-Repetitive Peak Surge Current | IFSM | 35 A | A |
| Operating Junction Temperature | TJ | -65 to +175 °C | °C |
| Maximum Instantaneous Forward Voltage | vF | 1.75 V @ IF = 1.0 A, TJ = 25°C | V |
| Maximum Reverse Recovery Time | trr | 75 ns @ IF = 1.0 A, di/dt = 50 A/μs | ns |
| Controlled Avalanche Energy | WAVAL | 10 mJ | mJ |
Key Features
- Ultrafast 75 nanosecond recovery time, ensuring minimal switching losses.
- High reverse voltage capability up to 1000 V, providing robust protection against voltage transients.
- Low forward voltage (1.75 V @ IF = 1.0 A, TJ = 25°C) for reduced power losses.
- Low leakage current and high temperature glass passivated junction for reliability.
- Controlled avalanche energy of 10 mJ, offering added protection against transient voltages.
- Operating junction temperature up to 175°C, suitable for high-temperature applications.
- Pb-free and corrosion-resistant epoxy molded case with readily solderable terminal leads.
Applications
- Switching power supplies: Ideal for use in high-frequency switching applications due to its ultrafast recovery time.
- Inverters: Suitable for inverter circuits requiring high reverse voltage and fast recovery times.
- Free-wheeling diodes: Used in applications where fast recovery and high reverse voltage are necessary.
- Inductive load circuits: Provides excellent protection against voltage transients in inductive load circuits.
Q & A
- What is the peak repetitive reverse voltage of the MUR1100EG?
The peak repetitive reverse voltage (VRRM) of the MUR1100EG is 1000 V.
- What is the average rectified forward current rating of the MUR1100EG?
The average rectified forward current (IF(AV)) is 1.0 A at an ambient temperature (TA) of 95°C.
- What is the maximum instantaneous forward voltage of the MUR1100EG?
The maximum instantaneous forward voltage (vF) is 1.75 V at IF = 1.0 A and TJ = 25°C.
- What is the recovery time of the MUR1100EG?
The maximum reverse recovery time (trr) is 75 ns at IF = 1.0 A and di/dt = 50 A/μs).
- What is the controlled avalanche energy of the MUR1100EG?
The controlled avalanche energy (WAVAL) is 10 mJ).
- What is the operating junction temperature range of the MUR1100EG?
The operating junction temperature range is -65 to +175 °C).
- Is the MUR1100EG Pb-free?
- What are the typical applications of the MUR1100EG?
The MUR1100EG is typically used in switching power supplies, inverters, and as free-wheeling diodes).
- What is the maximum non-repetitive peak surge current of the MUR1100EG?
The maximum non-repetitive peak surge current (IFSM) is 35 A).
- How is the polarity indicated on the MUR1100EG?
The polarity is indicated by a cathode band on the device).
