MUR160A
  • Share:

Taiwan Semiconductor Corporation MUR160A

Manufacturer No:
MUR160A
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160A, produced by Taiwan Semiconductor Corporation, is an ultrafast rectifier diode designed for high-speed switching applications. This component features a moulded plastic case with lead-free solderable pure tin-plated terminals, adhering to the MIL-STD-202 standard. It is particularly suited for use in switching power supplies, inverters, and as free-wheeling diodes. The MUR160A boasts high efficiency, low forward voltage drop, and low leakage current, making it an excellent choice for demanding applications. The device operates at an elevated temperature of up to 175°C and has a reverse voltage rating of 600 volts.

Key Specifications

Parameter Value
Manufacturer Taiwan Semiconductor Corporation
Part Number MUR160A
Diode Type Rectifier Diode
Reverse Voltage (Vr) 600 V
Average Forward Current (Io) 1 A
Forward Voltage (Vf) Max 1.25 V @ 1 A
Reverse Recovery Time (trr) 50 ns
Operating Temperature -55°C to 175°C
Package/Case DO-204AL (DO-41), Axial
Number of Terminals 2
Forward Surge Current 35 A
Reverse Current Max 5 µA @ 600 V

Key Features

  • Ultrafast recovery times (up to 50 ns)
  • High operating junction temperature (up to 175°C)
  • Low forward voltage drop (1.25 V @ 1 A)
  • Low leakage current (5 µA @ 600 V)
  • High-temperature glass passivated junction
  • Reverse voltage rating up to 600 V
  • Lead-free solderable pure tin-plated terminals
  • Corrosion-resistant epoxy case
  • Readily solderable terminal leads

Applications

The MUR160A is designed for use in various high-speed switching applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes
  • Aerospace, Defence, and Military applications

Q & A

  1. What is the maximum reverse voltage rating of the MUR160A?

    The MUR160A has a maximum reverse voltage rating of 600 V.

  2. What is the average forward current of the MUR160A?

    The average forward current of the MUR160A is 1 A.

  3. What is the maximum operating temperature of the MUR160A?

    The maximum operating temperature of the MUR160A is 175°C.

  4. What is the reverse recovery time of the MUR160A?

    The reverse recovery time of the MUR160A is up to 50 ns.

  5. What type of package does the MUR160A come in?

    The MUR160A comes in a DO-204AL (DO-41) axial package.

  6. Is the MUR160A RoHS compliant?

    Yes, the MUR160A is RoHS compliant.

  7. What are the typical applications of the MUR160A?

    The MUR160A is typically used in switching power supplies, inverters, and as free-wheeling diodes.

  8. What is the forward voltage drop of the MUR160A?

    The forward voltage drop of the MUR160A is 1.25 V at 1 A.

  9. What is the maximum forward surge current of the MUR160A?

    The maximum forward surge current of the MUR160A is 35 A.

  10. Is the MUR160A suitable for high-temperature applications?

    Yes, the MUR160A is suitable for high-temperature applications up to 175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.11
6,543

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MUR160A MUR160G MUR160AH MUR160S MUR160H MUR190A MUR160
Manufacturer Taiwan Semiconductor Corporation onsemi Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Diodes Incorporated
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 900 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 75 ns 50 ns 50 ns 50 ns 75 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 150 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz - 27pF @ 4V, 1MHz - 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-214AA, SMB DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) Axial DO-204AL (DO-41) DO-214AA (SMB) DO-204AC (DO-15) DO-204AL (DO-41) DO-41
Operating Temperature - Junction -55°C ~ 175°C -65°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

1.5KE6.8A R0G
1.5KE6.8A R0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BAT54 RFG
BAT54 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5406GHA0G
1N5406GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
LL4007G L0G
LL4007G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A MELF
BZV55C24 L0G
BZV55C24 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 24V 500MW MINI MELF
BZV55C68 L0G
BZV55C68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55C6V2 L0G
BZV55C6V2 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZX585B3V0 RSG
BZX585B3V0 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 200MW SOD523F
BZX585B5V1 RSG
BZX585B5V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 200MW SOD523F
BZX585B5V6 RSG
BZX585B5V6 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 200MW SOD523F
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF