MUR160S
  • Share:

Taiwan Semiconductor Corporation MUR160S

Manufacturer No:
MUR160S
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160S, manufactured by Taiwan Semiconductor Corporation, is an ultrafast rectifier diode designed for high-speed switching applications. This component is part of the MUR series, known for its fast recovery times and robust construction. The MUR160S is particularly suited for use in switching power supplies, inverters, and as free-wheeling diodes due to its high-speed switching performance and low forward voltage drop.

Key Specifications

Parameter Value
Manufacturer Taiwan Semiconductor Corporation
Part Number MUR160S
Diode Type Rectifier Diode
Maximum DC Reverse Voltage (V) 600 V
Forward Current (IF) 1 A
Forward Voltage (VF) 1.25 V
Reverse Recovery Time 50 ns (typical)
Operating Temperature Range -55°C to 175°C
Package Type DO-214AA (SMB)
Mounting Type Surface Mount
Lead Shape Inward L-Lead

Key Features

  • Ultrafast recovery times of 25, 50, or 75 nanoseconds, ensuring high-speed switching performance.
  • Low forward voltage drop of 1.25 V, reducing power losses.
  • Low leakage current, enhancing efficiency in applications.
  • High operating junction temperature of up to 175°C, suitable for demanding environments.
  • Reverse voltage rating of up to 600 V, providing robust protection against voltage spikes.
  • High-temperature glass passivated junction for reliability and durability.
  • Corrosion-resistant epoxy case and readily solderable terminal leads for ease of use.

Applications

The MUR160S is designed for various high-speed switching applications, including:

  • Switching power supplies: Due to its fast recovery times and low forward voltage drop, it is ideal for high-efficiency power supply designs.
  • Inverters: The component's ability to handle high reverse voltages and its fast switching capabilities make it suitable for inverter applications.
  • Free-wheeling diodes: Its ultrafast recovery times and low leakage current make it an excellent choice for free-wheeling diode applications.

Q & A

  1. What is the maximum reverse voltage rating of the MUR160S?

    The MUR160S has a maximum DC reverse voltage rating of 600 V.

  2. What are the typical recovery times for the MUR160S?

    The recovery times for the MUR160S are typically 25, 50, or 75 nanoseconds.

  3. What is the operating temperature range of the MUR160S?

    The operating temperature range of the MUR160S is from -55°C to 175°C.

  4. What is the forward voltage drop of the MUR160S?

    The forward voltage drop of the MUR160S is 1.25 V.

  5. What type of package does the MUR160S come in?

    The MUR160S comes in a DO-214AA (SMB) package.

  6. Is the MUR160S suitable for surface mount applications?
  7. What are some common applications for the MUR160S?

    The MUR160S is commonly used in switching power supplies, inverters, and as free-wheeling diodes.

  8. What is the maximum forward current rating of the MUR160S?

    The maximum forward current rating of the MUR160S is 1 A.

  9. Is the MUR160S compliant with RoHS regulations?
  10. What is the ECCN code for the MUR160S?

    The ECCN code for the MUR160S is EAR99.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:150 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.12
3,507

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MUR160S MUR160SH MUR360S MUR110S MUR120S MUR140S MUR160 MUR160A MUR160G MUR160H
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Diodes Incorporated Taiwan Semiconductor Corporation onsemi Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 100 V 200 V 400 V 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 3A 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A - 875 mV @ 1 A 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 25 ns 25 ns 50 ns 50 ns 50 ns 75 ns 50 ns
Current - Reverse Leakage @ Vr 150 µA @ 600 V 5 µA @ 600 V 10 µA @ 600 V 50 µA @ 100 V 50 µA @ 200 V 150 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F - - - - - - 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz - 27pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole Through Hole Through Hole
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AB (SMC) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-41 DO-204AL (DO-41) Axial DO-204AC (DO-15)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 175°C -65°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

1N4937GH
1N4937GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
1N4001GHR1G
1N4001GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
1N4007G B0G
1N4007G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55C22 L0G
BZV55C22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZX585B5V1 RSG
BZX585B5V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 200MW SOD523F
BZX84C7V5 RFG
BZX84C7V5 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 300MW SOT23
BZV55B7V5 L1G
BZV55B7V5 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
BC857C RFG
BC857C RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC850CW RFG
BC850CW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323