1N4007GHB0G
  • Share:

Taiwan Semiconductor Corporation 1N4007GHB0G

Manufacturer No:
1N4007GHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GHB0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4007 series, known for its high current capability and low forward voltage drop. It is widely used in various applications requiring reliable and efficient rectification of power supplies.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum DC Blocking Voltage (VDC) 1000 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 30 A (8.3 ms sine-wave)
Forward Voltage (VF) 1.1 V
Reverse Recovery Time (trr) - -
Operating Temperature Range -65 to +150 °C
Junction Temperature (Tj) 150 °C
Diode Case Style DO-41 -
No. of Pins 2 -
Packaging Each -
Termination Type Axial Leaded -

Key Features

  • High Current Capability: The 1N4007GHB0G can handle a maximum average forward rectified current of 1.0 A and a peak forward surge current of 30 A.
  • Low Forward Voltage Drop: It features a low forward voltage drop of 1.1 V, which is beneficial for reducing power losses in applications.
  • Surge Overload Rating: The diode is rated for surge overload up to 30 A peak, making it robust against transient conditions.
  • RoHS Compliant: The diode has a lead-free finish and is RoHS compliant, ensuring environmental sustainability.
  • UL Flammability Rating: The molded plastic case meets the UL 94 V-0 flammability rating, enhancing safety in applications.

Applications

The 1N4007GHB0G is suitable for a variety of applications, including:

  • General Purpose Rectification: Used in power supplies, inverters, and converters for efficient rectification.
  • Freewheeling Diodes: Often used as freewheeling diodes in inductive load circuits to protect against back EMF.
  • Bridge Rectifier Applications: Can be used in bridge rectifier configurations for AC to DC conversion.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007GHB0G?

    The maximum repetitive peak reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of the 1N4007GHB0G?

    The maximum average forward rectified current is 1.0 A.

  3. What is the forward voltage drop of the 1N4007GHB0G?

    The forward voltage drop is 1.1 V.

  4. Is the 1N4007GHB0G RoHS compliant?

    Yes, the diode is RoHS compliant with a lead-free finish.

  5. What is the operating temperature range of the 1N4007GHB0G?

    The operating temperature range is -65 to +150 °C.

  6. What is the junction temperature of the 1N4007GHB0G?

    The junction temperature is 150 °C.

  7. What is the case style of the 1N4007GHB0G?

    The case style is DO-41.

  8. What is the termination type of the 1N4007GHB0G?

    The termination type is axial leaded.

  9. What are some common applications of the 1N4007GHB0G?

    Common applications include general purpose rectification, freewheeling diodes, and bridge rectifier configurations.

  10. Does the 1N4007GHB0G meet any specific safety standards?

    Yes, it meets the UL 94 V-0 flammability rating.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
578

Please send RFQ , we will respond immediately.

Same Series
1N4005G R1G
1N4005G R1G
DIODE GEN PURP 600V 1A DO204AL
1N4006G R1G
1N4006G R1G
DIODE GEN PURP 800V 1A DO204AL
1N4007G R1G
1N4007G R1G
DIODE GEN PURP 1A DO204AL
1N4002GHR0G
1N4002GHR0G
DIODE GEN PURP 100V 1A DO204AL
1N4003G R0G
1N4003G R0G
DIODE GEN PURP 200V 1A DO204AL
1N4003GHR0G
1N4003GHR0G
DIODE GEN PURP 200V 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4006G A0G
1N4006G A0G
DIODE GEN PURP 800V 1A DO204AL
1N4006GHA0G
1N4006GHA0G
DIODE GEN PURP 800V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4005GHB0G
1N4005GHB0G
DIODE GEN PURP 600V 1A DO204AL
1N4006G B0G
1N4006G B0G
DIODE GEN PURP 800V 1A DO204AL

Similar Products

Part Number 1N4007GHB0G 1N4006GHB0G 1N4007G B0G 1N4007GHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 800 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523

Related Product By Brand

1.5KE120AH
1.5KE120AH
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAS40-05 RFG
BAS40-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 40V SOT23
MUR160SH
MUR160SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
BAT54W RVG
BAT54W RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT-323
BZX85C15 A0G
BZX85C15 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 1.3W DO204AL
BZV55C3V3 L0G
BZV55C3V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55B9V1 L1G
BZV55B9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
BZV55C16 L1G
BZV55C16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C8V2 L1G
BZV55C8V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW MINI MELF
BZX585B13 RKG
BZX585B13 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BC846BW RFG
BC846BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT323
BC848BW RFG
BC848BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT323